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Colossal magnetoresistance

About: Colossal magnetoresistance is a research topic. Over the lifetime, 3658 publications have been published within this topic receiving 130104 citations.


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Journal ArticleDOI
TL;DR: The transverse resistivity in thin films of La 0.84Sr0.16MnO3 (LSMO) exhibits sharp field-symmetric jumps below TC.
Abstract: The transverse resistivity in thin films of La0.84Sr0.16MnO3 (LSMO) exhibits sharp field-symmetric jumps below TC. We show that a likely source of this behavior is the giant planar Hall effect combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and nonvolatile memory devices.

68 citations

Journal ArticleDOI
TL;DR: In this article, the experimental evidences of conductive filaments, the transport and switching mechanisms, and the memory performances and enhancing methods of perovskite oxide based filamentary RRAM cells have been summarized and discussed.

68 citations

Journal ArticleDOI
TL;DR: In this paper, the Monte Carlo method was used to study the ferromagnetic transition in three-dimensional double-exchange models and the critical temperature was determined by finite-size scaling analysis.
Abstract: Ferromagnetic transition in three-dimensional double-exchange models is studied by the Monte Carlo method. Critical temperature $T_{\rm c}$ is precisely determined by finite-size scaling analysis. Strong spin fluctuations in this itinerant system significantly reduce $T_{\rm c}$ from mean-field estimates. By choosing appropriate parameters, obtained values of $T_{\rm c}$ quantitatively agree with experiments for the ferromagnetic metal regime of (La,Sr)MnO$_{3}$, which is a typical perovskite manganite showing colossal magnetoresistance. This indicates that the double-exchange mechanism alone is sufficient to explain $T_{\rm c}$ in this material. Critical exponents are also discussed.

67 citations

Journal ArticleDOI
TL;DR: In this article, the Mott-Hubbard correlation was used to model rare-earth (Re) manganites in the adiabatic regime, and the effect of all the strong local correlations was discussed.
Abstract: Rare-earth (Re) manganites (with alkaline-earth (Ak) ions partially substituting them), i.e. Re1−xAkxMnO3, have been intensively explored for the last decade or more because of the promise of magnetoelectronic applications as well as because of complex and unusual phenomena in which electronic, structural and magnetic effects are intertwined. A brief survey of these and a description of the three strong local interactions of the eg electrons (in two different orbital states at each site), namely with Jahn–Teller phonon modes (strength g), with resident t2g spins (ferromagnetic Hund's rule coupling JH) and between each other (the Mott–Hubbard correlation U) form the background against which efforts at modelling manganite behaviour are described. A new two-fluid model of nearly localized (l) polarons and band (b) electrons for low-energy behaviour is hypothesized for large g; some of its applications are mentioned here. First I describe some results of large U, JH calculations in single-site DMFT (dynamical mean field theory) which includes the effect of all the strong local correlations. These results are directly appropriate for the orbital liquid regime, found typically for 0.2

67 citations

Journal ArticleDOI
TL;DR: In this article, the successful sol-gel growth of colossal magnetoresistive La•Ca•Mn•O powder and epitaxial thin film was reported, and a transition from semiconductor (negative dρ/dT) to metal transition was observed at 225 K which was located in proximity to the magnetic transition temperature (Tc) of 228 K.
Abstract: The successful sol–gel growth of colossal magnetoresistive La‐Ca‐Mn‐O powder and epitaxial thin film is reported. Homogeneous powders were prepared at a temperature of 315 °C and epitaxial thin films were obtained on MgO(100) and LaAlO3(100) through heat treatment at 700–950 °C. A transition from semiconductor (negative dρ/dT) to metal (positive dρ/dT) was observed at 225 K, which was located in proximity to the magnetic transition temperature (Tc) of 228 K. A peak magnetoresistance ratio of ∼900% occurred at 220 K.

67 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202330
202252
202139
202038
201937
201837