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Colossal magnetoresistance
About: Colossal magnetoresistance is a research topic. Over the lifetime, 3658 publications have been published within this topic receiving 130104 citations.
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TL;DR: In this article, the double exchange mechanism was applied to manganite perovskites to obtain the colossal magnetoresistance (CMR) effect in the vicinity of the transition temperature, where charge transport is enhanced by the magnetic alignment of neighbouring Mn ions of different valence configuration.
Abstract: Manganese oxides with a perovskite structure1 exhibit a transition between a paramagnetic insulating phase and a ferromagnetic metal phase. Associated with this transition is an effect known as colossal magnetoresistance2–5 (CMR)—in the vicinity of the transition temperature, the materials exhibit a large change in resistance in response to an applied magnetic field. Such an effect, if optimized, might find potential application in magnetic devices. But the criteria for achieving (and hence optimizing) CMR are not clear, presenting a challenge for materials scientists. The accepted description of CMR in the manganite perovskites invokes the 'double-exchange' mechanism, whereby charge transport is enhanced by the magnetic alignment of neighbouring Mn ions of different valence configuration (Mn3+ and Mn4+), and inhibited by the formation of charge-induced localized lattice distortions6,7. Here we report the existence of a large magnetoresistive effect in a class of materials—Cr-based chalcogenide spinels—that do not possess heterovalency, distortion-inducing ions, manganese, oxygen or a perovskite structure. The realization of CMR in compounds having a spinel structure should open up a vast range of materials for the further exploration and exploitation of this effect.
381 citations
TL;DR: In this paper, a unidirectional magnetoresistance observed in bilayer metal films was used to add directional sensitivity to conventional magnetic sensors based on anisotropic magnetic sensors.
Abstract: A unidirectional magnetoresistance observed in bilayer metal films could be used to add directional sensitivity to conventional magnetic sensors based on anisotropic magnetoresistance.
369 citations
TL;DR: Experimental, phenomenological, and theoretical analyses are given of the dependence on strain of the ferromagnetic Tc of the colossal magnetoresistance (CMR) rare earth manganese perovskites as discussed by the authors.
Abstract: Experimental, phenomenological, and theoretical analyses are given of the dependence on strain of the ferromagnetic Tc of the colossal magnetoresistance (CMR) rare earth manganese perovskites. It is found that Tc is extremely sensitive to biaxial strain; by implication other physical properties are also. The results indicate that biaxial strain is an important variable which must be considered in the design of devices based on thin films and provide evidence in favor of the relevance of the Jahn–Teller electron-phonon coupling to the CMR phenomenon.
369 citations
TL;DR: It is shown that the resistivity decreases with increasing applied magnetic field because the spin-dependent tunneling increases as the relative orientation of the magnetization between grains becomes parallel.
Abstract: A mechanism for the large magnetoresistance observed recently in Co-Al-O granular magnetic films is presented. It is shown that the resistivity decreases with increasing applied magnetic field because the spin-dependent tunneling increases as the relative orientation of the magnetization between grains becomes parallel. With this mechanism we are able to account for the dependence of the magnetoresistance on the magnetization and temperature.
366 citations
TL;DR: In this article, it was shown that the peak magnetoresistance peak occurs not at the temperature of magnetic transition but at a temperature where the magnetization is still substantial, the spin disorder scattering is not likely to be the main mechanism in these highly magnetoresistive films.
Abstract: Colossal magnetoresistance with more than a thousandfold change in resistivity (ΔR/RH=127 000% at 77 K, H=6 T) has been obtained in epitaxially grown La‐Ca‐Mn‐O thin films. This magnetoresistance value is about three orders of magnitude higher than is typically seen in the giant‐magnetoresistance‐type metallic, superlattice films. The temperature of peak magnetoresistance is located in the region of metallic resistivity behavior. As the magnetoresistance peak occurs not at the temperature of magnetic transition but at a temperature where the magnetization is still substantial, the spin‐disorder scattering is not likely to be the main mechanism in these highly magnetoresistive films. The peak can be shifted to near room temperature by adjusting processing parameters. Near‐room‐temperature ΔR/RH values of ∼1300% at 260 K and ∼400% at 280 K have been observed. The presence of grain boundaries appears to be very detrimental to achieving large magnetoresistance in the lanthanum manganite compounds. The fact th...
358 citations