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Common emitter
About: Common emitter is a research topic. Over the lifetime, 34191 publications have been published within this topic receiving 273135 citations.
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TL;DR: In this article, an organic electroluminescenters with multilayered thin-film structures which emitted bright blue light were constructed and two empirical guides for the selection of blue-emitting materials were established.
Abstract: Organic electroluminescent (EL) devices with multilayered thin‐film structures which emitted bright blue light were constructed. Two empirical guides for the selection of blue‐emitting materials were established. The keys to obtain the EL cells with high EL efficiency were excellent film‐forming capability of an emitter layer and the appropriate combinations of emitter and carrier transport materials for avoiding the formation of exciplexes. In one of our organic electroluminescent devices, blue emission with a luminance of 700 cd/m2 was achieved at a current density of 100 mA/cm2 and a dc drive voltage of 10 V.
676 citations
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TL;DR: In this paper, a new silicon solar cell structure, the passivated emitter and rear cell, is described, which yields independently confirmed efficiencies of up to 22.8%, the highest ever reported for a silicon cell.
Abstract: A new silicon solar cell structure, the passivated emitter and rear cell, is described. The cell structure has yielded independently confirmed efficiencies of up to 22.8%, the highest ever reported for a silicon cell.
621 citations
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TL;DR: In this article, a thin-film electroluminescent device with a luminescent hole transport layer as an emitter was constructed, which achieved an emission intensity of 1000 cd/m2 at a current of 100 mA/cm2.
Abstract: We have succeeded in fabricating a novel thin‐film electroluminescent device with a luminescent hole transport layer as an emitter. The cell structure is composed of an indium‐tin‐oxide substrate, a luminescent hole transport layer (emitter), an electron transport layer, and a MgAg electrode. The most essential feature of our device owes for adoption of an oxadiazole derivative as an electron transport layer. The emission intensity of 1000 cd/m2 was achieved at a current of 100 mA/cm2.
620 citations
Patent•
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TL;DR: In this paper, a gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell, and a buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode.
Abstract: A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base layer of the second conductivity type, and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell. A buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode. The dummy cell is provided with an inhibiting structure to reduce carriers of the second conductivity type to flow to and accumulate in the buffer layer from the collector layer.
609 citations