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Conductance

About: Conductance is a research topic. Over the lifetime, 8088 publications have been published within this topic receiving 235961 citations.


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Journal ArticleDOI
TL;DR: In this article, it has been observed that the conductance fluctuations of atomic-size gold contacts are suppressed when conductance is equal to an integer multiple of a conductance quantum, and the fact that these contacts tend to consist exclusively of fully open or closed modes has been argued to be the origin for this suppression.
Abstract: Recently it has been observed that the conductance fluctuations of atomic-size gold contacts are suppressed when the conductance is equal to an integer multiple of the conductance quantum. The fact that these contacts tend to consist exclusively of fully open or closed modes has been argued to be the origin for this suppression. Here the experiments have been extended to a wide range of metallic elements with different chemical valences, and they provide information about the relation between the mode composition and statistically preferred conductance values observed in conductance histograms.

105 citations

Journal ArticleDOI
TL;DR: In this article, the authors describe quantum wires and point contacts fabricated in GaAs/AlxGa1−xAs heterostructures that are free of the disorder introduced by modulation doping and in which the electron density and the confining potential are separately adjustable by lithographically defined gates.
Abstract: We describe quantum wires and point contacts fabricated in GaAs/AlxGa1−xAs heterostructures that are free of the disorder introduced by modulation doping and in which the electron density and the confining potential are separately adjustable by lithographically defined gates. We observe conductance plateaus quantized near even multiples of e2/h in 2 μm wires and up to 15 conductance steps in 5 μm wires at temperatures below 1 K. Near the conductance threshold the quantum point contact and the 2 μm wire both show additional structure below 2e2/h.

105 citations

Journal ArticleDOI
TL;DR: Electroburnt graphene junctions exhibit a surprising conductance enlargement just before breaking, which signals the formation of a picoscale current path formed from a single sp2 bond, in contrast with mechanically controlled break junctions.
Abstract: Provided the electrical properties of electroburnt graphene junctions can be understood and controlled, they have the potential to underpin the development of a wide range of future sub-10-nm electrical devices. We examine both theoretically and experimentally the electrical conductance of electroburnt graphene junctions at the last stages of nanogap formation. We account for the appearance of a counterintuitive increase in electrical conductance just before the gap forms. This is a manifestation of room-temperature quantum interference and arises from a combination of the semimetallic band structure of graphene and a cross-over from electrodes with multiple-path connectivity to single-path connectivity just before breaking. Therefore, our results suggest that conductance enlargement before junction rupture is a signal of the formation of electroburnt junctions, with a picoscale current path formed from a single sp2 bond.

104 citations

Journal ArticleDOI
TL;DR: In this article, a series of Cr films are grown on Si substrates subject to various deposition conditions to control the growth around the Cr/Si boundary, and the thermal boundary conductance (h BD ) is measured with the transient thermoreflectance technique.
Abstract: The thermal conductance at solid-solid interfaces is becoming increasingly important in thermal considerations dealing with devices on nanometer length scales. Specifically, interdiffusion or mixing around the interface, which is generally ignored, must be taken into account when the characteristic lengths of the devices are on the order of the thickness of this mixing region. To study the effect of this interfacial mixing on thermal conductance, a series of Cr films is grown on Si substrates subject to various deposition conditions to control the growth around the Cr/Si boundary. The Cr/Si interfaces are characterized with Auger electron spectroscopy. The thermal boundary conductance (h BD ) is measured with the transient thermoreflectance technique. Values of h BD are found to vary with both the thickness of the mixing region and the rate of compositional change in the mixing region. The effects of the varying mixing regions in each sample on h BD are discussed, and the results are compared to the diffuse mismatch model (DMM) and the virtual crystal DMM (VCDMM), which takes into account the effects of a two-phase region of finite thickness around the interface on h BD . An excellent agreement is shown between the measured h BD and that predicted by the VCDMM for a change in thickness of the two-phase region around the interface.

104 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023457
2022828
2021154
2020158
2019172
2018168