Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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01 Jan 2010
TL;DR: In this paper, the throughplane thermal conductivities of several widely used carbon porous transport layers (PTLs or GDLs) and their thermal contact resistance to an aluminium polarisation plate were reported.
Abstract: We report the through-plane thermal conductivities of the several widely used carbon porous transport layers (PTLs or GDLs) and their thermal contact resistance to an aluminium polarisation plate. We report these values both for wet and dry samples and at different compaction pressures. We show that depending on the type of PTL and possible residual water, the thermal conductivity of the materials varies from 0.15 to 1.6 W K−1 m−1 — one order of magnitude. This behaviour is the same for the contact resistance varying from 0.8 to 11 10−4 m2 K W−1 . For dry PTLs the thermal conductivity decreases with increasing PTFE content and increases with residual water. These effects are explained by the behaviour of air, water and PTFE in between the PTL fibres.Copyright © 2010 by ASME
87 citations
TL;DR: In this article, a MnCo1.9Fe0.1O4 (MCF) spinel was used to reduce the contact resistance between a La0.8Sr0.2Co0.25O3 contact layer and a stainless steel interconnect.
87 citations
TL;DR: In this paper, a thermal model for the scanning thermal microscopy (SThM) probe is presented with two steps: a model out of contact which enables a calibration of the probe, and a model in contact to extract thermal parameters from the sample under study.
Abstract: Thermal imaging of individual silicon nanowires (Si NWs) is carried out by a scanning thermal microscopy (SThM) technique. The vertically aligned 1.7 μm long Si NWs are fabricated combining nanosphere lithography and metal-induced wet chemical etching. A thermal model for the SThM probe is then presented with two steps: a model out of contact which enables a calibration of the probe, and a model in contact to extract thermal parameters from the sample under study. Using this model and the experimental thermal images, we finally determine a mean value of the tip-to-sample thermal contact resistance and a mean value of the Si NWs thermal conductivity. No significant thermal conductivity reduction in comparison with bulk Si is observed for Si NWs with diameters ranging from 200 to 380 nm. However, the technique presented here is currently the only one available to perform thermal measurements simultaneously on an assembly of individual one-dimensional nanostructures. It enables to save time and to make a sta...
87 citations
TL;DR: In this paper, the authors investigated the contact resistance in PEMFCs with metal bipolar plates with state-of-the-art membrane electrode assemblies, specifically Au/TiO 2 -coated titanium bipolar plates (BPPs), gas diffusion layers with microporous layers (GDLs with MPLs), and catalyst-coated membranes (CCMs) comprising a 15-μm-thick proton exchange membranes.
87 citations
TL;DR: This research paper analyzes, finite element based two dimensional device simulations for top and bottom contact organic field effect transistors (OFETs) by considering uniform and non-consistent mobility regions by considering contact resistance and field dependent mobility.
87 citations