Contact resistance

About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.

An electrostatically-actuated MEMS switch for power applications

Abstract: This paper presents the design, analysis, fabrication, and testing of an electrostatically-actuated MEMS power switch. The device can be switched electrostatically (20 V), pneumatically (1200 Pa), or through combined actuation. Prototype switches carry currents in excess of 400 mA in either current direction with a contact resistance as low as 14 m/spl Omega/. Their off-state resistance is higher than the 30 M/spl Omega/ limit of the test equipment. Breakdown voltages of 300 V have been achieved across their small air gaps. Their nominal switching time is 20 ms. Extended lifetime testing has not been carried out but our tests to date show that the prototype switches operate more than 4000 cycles without significant degradation in their contact resistance. Finally, a protective switching scheme is proposed to minimize contact wear due to arcing during switch opening and closing.

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

Abstract: We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents The model captures the effects of dimensional scaling and performance degradations due to parasitic effects and is used to study the trade-offs between the drive current and leakage current of CNFETs according to the selection of CNT diameter, CNT density, contact length, and gate length for a target contacted gate pitch We describe a co-optimization study of CNFET device parameters near the limits of scaling with physical insight, and project the CNFET performance at the 5-nm technology node with an estimated contacted gate pitch of 31 nm Based on the analysis including parasitic resistance, capacitance, and tunneling leakage current, a CNT density of 180 CNTs/{\mu}m will enable CNFET technology to meet the ITRS target of drive current (133 mA/{\mu}m), which is within reach of modern experimental capabilities

Study on the resistance distribution at the contact between molybdenum disulfide and metals.

Abstract: Contact resistance hinders the high performance of electrical devices, especially devices based on two-dimensional (2D) materials, such as graphene and transition metal dichalcogenide. To engineer contact resistance, understanding the resistance distribution and carrier transport behavior at the contact area is essential. Here, we developed a method that can be used to obtain some key parameters of contact, such as transfer length (Lt), sheet resistance of the 2D materials beneath the contacting metal (Rsh), and contact resistivity between the 2D materials and the metal electrode (ρc). Using our method, we studied the contacts between molybdenum disulfide (MoS2) and metals, such as titanium and gold, in bilayer and few-layered MoS2 devices. Especially, we found that Rsh is obviously larger than the sheet resistance of the same 2D materials in the channel (Rch) in all the devices we studied. With the increasing of the back-gate voltage, Lt increases and Rsh, ρc, Rch, and the contact resistance Rc decrease in all the devices we studied. Our results are helpful for understanding the metal–MoS2 contact and improving the performances of MoS2 devices.