Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: In this article, a non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction was demonstrated.
Abstract: Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al0.3Ga0.7N interband tunnel junctions with a low resistance of 5.6 × 10−4 Ω cm2 were obtained and integrated on ultraviolet light emitting diodes. Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-type Al0.3Ga0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm2 at a current density of 120 A/cm2 with a forward voltage of 5.9 V was achieved. This demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.
79 citations
TL;DR: In this paper, the formation of Ohmic contacts to n-GaAs without the need for a high-temperature alloy was reported. But the authors did not consider the effect of high temperature on the contact resistance.
Abstract: We report the formation of Ohmic contacts to n‐GaAs without the need for a high‐temperature alloy. Heavily doped n‐GaAs(Sn) was grown using molecular beam epitaxy in which the concentration of free carriers was as high as ‖ND−NA‖=6×1019 cm−3 yielding specific contact resistance rc=1.86×10−6 Ω‐cm2.
79 citations
Patent•
16 Apr 1998
TL;DR: In this article, a system used to test an integrated circuit (20) on a semiconductor wafer has a support for a plurality of probe needles (14) electrically coupled to the test system wherein the probe needles achieve low contact resistance with low contact force without substantially scrubbing the contact pads of the integrated circuit under test.
Abstract: A system used to test an integrated circuit (20) on a semiconductor wafer has a support (11) for a plurality of probe needles (14) electrically coupled to the test system wherein the probe needles achieve low contact resistance with low contact force without substantially scrubbing the contact pads (62) of the integrated circuit under test. Each probe needle is curved (14A) in such a manner so as to cause the probe needles to flex in response to compression during mechanical movement of the wafer that further causes the tip of each probe needle to rock without appreciable sliding on the surface of the contact pads of the integrated circuit. The rocking motion of the probe needles result in lateral displacement of oxide on the surface of the contact pads thereby improving electrical contact between the probe needles and the contact pads of the integrated circuit under test.
78 citations
TL;DR: In this article, the authors proposed a theoretical description of the charge distribution and the contact resistance in coplanar organic field-effect transistors (OFETs), and they derived an analytical formulation for charge distribution inside the organic layer.
Abstract: We propose a theoretical description of the charge distribution and the contact resistance in coplanar organic field-effect transistors (OFETs). Based on the concept that the current in organic semiconductors is only carried by injected carriers from the electrodes, an analytical formulation for the charge distribution inside the organic layer was derived. We found that the contact resistance in coplanar OFETs arises from a sharp low-carrier-density zone at the source/channel edge because the gate-induced channel carrier density is orders of magnitude higher than the source carrier density. This image is totally different from the contact resistance in staggered OFETs, in which the contact resistance mainly originates from the resistance through the semiconductor bulk. The contact resistance was calculated through charge-distribution functions, and the model could explain the effect of the gate voltage and injection barrier on the contact resistance. Experimental data on pentacene OFETs were analyzed using the transmission-line method. We finally noticed that the gate-voltage-dependent mobility is a critical factor for proper understanding of the contact resistance in real devices.
78 citations
TL;DR: In this article, a multilayer Ti∕Au contacts were fabricated on individual, unintentionally doped zinc selenide nanowires with 80nm nominal diameter and four-terminal contact structures were used to independently measure current-voltage characteristics of contacts and nanowsires.
Abstract: Multilayer Ti∕Au contacts were fabricated on individual, unintentionally doped zinc selenide nanowires with 80nm nominal diameter. Four-terminal contact structures were used to independently measure current-voltage characteristics of contacts and nanowires. Specific contact resistivity of Ti∕Au contacts is 0.024Ωcm2 and intrinsic resistivity of the nanowires is approximately 1Ωcm. The authors have also measured the spectral photocurrent responsivity of a ZnSe nanowire with 2.0V bias across Ti∕Au electrodes, which exhibits a turnon for wavelengths shorter than 470nm and reaches 22A∕W for optical excitation at 400nm.
78 citations