Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: In this paper, the transport properties of single GaN and InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of temperature, annealing condition (for GaN) and length/square of radius ratio (for InN).
Abstract: The transport properties of single GaN and InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of temperature, annealing condition (for GaN) and length/square of radius ratio (for InN). The as-grown GaN nanowires were insulating and exhibited n-type conductivity (n ≈ 2×1017 cm−3, mobility of 30 cm2/V s) after annealing at 700°C. A simple fabrication process for GaN nanowire field-effect transistors on Si substrates was employed to measure the temperature dependence of resistance. The transport was dominated by tunneling in these annealed nanowires. InN nanowires showed resistivity on the order of 4×10−4 Ω cm and the specific contact resistivity for unalloyed Pd/Ti/Pt/Au ohmic contacts was near 1.09×10−7 Ω cm2. For In N nanowires with diameters <100 nm, the total resistance did not increase linearly with length/square of radius ratio but decreased exponentially, presumably due to more pronounced surface effect. The temperature dependence of resistance showed a positive temperature coefficient and a functional form characteristic of metallic conduction in the InN nanowires.
67 citations
TL;DR: In this paper, a numerical study was performed to investigate the effect of clamping pressure on the performance of liquid-cooled PEMFC stacks, which can be utilized as a guidance for stack assembly process in practical application.
67 citations
TL;DR: The transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructure field effect transistors have been investigated in this article, where the authors found that carrier transport across the barrier layer is dominated by the tunneling of electrons that originate from the two-dimensional electron gas located at the AlGaE interface.
Abstract: The transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructure field-effect transistors have been investigated. We found that carrier transport across the AlGaN barrier layer is dominated by the tunneling of electrons that originate from the two-dimensional electron gas located at the AlGaN/GaN interface. The observed temperature dependence of the specific contact resistivity is different from that of the contact on highly doped bulk semiconductors, although tunneling current dominates the carrier transport in both cases.
67 citations
TL;DR: In this article, a measurement system comprised of a piezoresistive cantilever and an optical interferometer was designed to measure contact resistance (mOhm to kOhm), force (nN to mN), and displacement (nm-/spl mu/m).
Abstract: To support the continued miniaturization of electrical contacts in multichip systems, three-dimensional (3-D) systems, wafer probe cards, and MEMS relays, there is a need for combined measurements of electrical and mechanical phenomena during contact formation. We have carried out a study of electrical contacts in the nN-mN force range for future generation probe cards and novel electronic packaging. One critical phenomenon in the contact formation process is nm-scale deformation of the material layers. To directly study this contact displacement, we have designed a measurement system comprised of a piezoresistive cantilever and an optical interferometer. Together, this system simultaneously measures contact resistance (mOhm to kOhm), force (nN to mN), and displacement (nm-/spl mu/m). These measurements allow the first direct observation of contact mechanical behavior in this important application range. These measurements show that asperities at the contact surface dominate the behavior of the contacts, causing deviations from the Hertzian model of elastic contacts. This paper describes the design and construction of this apparatus, and the operation in a contact mechanics experiment.
67 citations
TL;DR: In this article, nonalloyed ohmic contacts to n-GaAs with contact resistances (ρc) below 1·0×10−7 Ω cm2 have been obtained using a Ge/GaAs heterojunction system.
Abstract: Nonalloyed ohmic contacts to n-GaAs with contact resistances (ρc) below 1·0×10−7 Ω cm2 have been obtained using a Ge/GaAs heterojunction system. Metals are evaporated on heavily arsenic-doped germanium (Ge) layers grown on GaAs. Low values of ρc result from the low Schottky barrier height (≈ 0·50 eV) and the high doping levels obtainable for n-Ge(≈ 1020 cm−3).
67 citations