Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: In this article, the authors review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors and summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.
Abstract: The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.
59 citations
TL;DR: In this paper, a comprehensive mathematical model for the planar solid oxide fuel cell (SOFC) stack is presented, which couples the intricate interdependency among the ionic conduction, electronic conduction and gas transport and takes into account the contact resistance between the electrode and interconnect rib and the dependence of the effective electrode properties on the microstructure parameters of the porous electrode.
59 citations
TL;DR: In this article, the interfacial resistance between the cathode layer (CL) and the current collector (CC) was observed at high frequencies, which was generally attributed to a resistance of surface film like SEI.
59 citations
TL;DR: In this paper, the reliability of electrostatically actuated ohmic contact type MEMS relays has been investigated for an example relay with planar contacts of area 80 µm × 20 µm and spacing of 10 µm between the movable and fixed contacting surfaces.
Abstract: The reliability of electrostatically actuated ohmic contact type MEMS relays has been investigated. Multi-contact MEMS relays laterally actuated using electrostatic comb-drive actuators were used in this study. The MEMS relays were fabricated using the MetalMUMPs process, which uses a 20 µm thick electroplated nickel as the structural layer. A 3 µm thick gold layer was electroplated on the electrical contact surfaces. An example MEMS relay with planar contacts of area 80 µm × 20 µm and spacing of 10 µm between the movable and fixed contacting surfaces is discussed. The overall size of the relay is approximately 3 mm × 3 mm. 'Resistance versus applied voltage' characteristics have been studied. At an applied dc bias voltage of 120 V, the movable fingers make initial contact with the fixed fingers. The 'resistance versus applied voltage' characteristics have been measured for an applied bias voltage in the range of 172–220 V. Reliability testing of the MEMS relay up to one million actuations has been carried out and the resistance degradation with actuation cycles is discussed.
59 citations
TL;DR: In this paper, the authors present a detailed review and direct comparison of the different models that have been used to predict electrical contact resistance in anisotropic conductive adhesive (ACA) interconnects.
Abstract: Anisotropic conductive adhesive (ACA) assembly is emerging as one of the most flexible and cost effective packaging interconnect methods in the microelectronics industry. One of the major impediments to the full realization of the fine pitch (<200 /spl mu/m) capabilities of this assembly method is accurate prediction and control of electrical contact resistance. This paper presents a detailed review and direct comparisons of the different models that have been used to predict electrical contact resistance in ACA interconnects. It is found that large discrepancies exist among these models and between contact resistance values experimentally measured and what these models predict. The governing equations and assumptions underlying the models and their implications are examined, and possible rationales for the observed discrepancies and future directions for developing improved models are identified. The study shows that important issues generally not considered in current models are tunneling resistance, multimaterial layers, edge effect, rough surfaces, elastic recovery and residual forces, interaction between nearby particles and variation on the radii of multiple particles.
59 citations