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Contact resistance

About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.


Papers
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Proceedings ArticleDOI
29 Aug 1999
TL;DR: In this paper, an analytical model and a numerical scheme are developed to investigate the steady-state cooling surrounding thermoelectric microcoolers, including the thermal and the electrical contact resistances and the spreading heat resistance.
Abstract: In this paper, we investigate the possibility of creating spot cooling using thermoelectric microcoolers. An analytical model and a numerical scheme are developed to investigate the steady-state cooling surrounding microcoolers. The effects considered include the thermal and the electrical contact resistances and the spreading heat resistance. Parametric studies are carried out on the influences of the geometry and materials properties on the device performance. Simulation results show that local deep cooling can be reached if heat spreading materials are properly chosen.

57 citations

Journal ArticleDOI
TL;DR: In this paper, the scaling limits of electrostatically actuated nanorelays are explored, and it is shown that adhesion in a nanorelay's contact interface limits its performance with respect to operating voltage, contact resistance, and switching energy.
Abstract: A model to explore the scaling limits of electrostatically actuated nanorelays is presented, which shows that adhesion in a nanorelay's contact interface limits its performance with respect to operating voltage, contact resistance, and switching energy. For logic applications, we show that an ultimately scaled relay can be more efficient than conventional metal-oxide-semiconductor devices if (1) it is designed with very high contact resistances, leading to ≈ 1-MHz operation due to large RC delays, or (2) its actuation area is extremely large compared with its contacting area, leading to very low voltage operation, which reduces overall CV2 losses. We propose new relay scaling relations that account for the scaling of contact interfaces.

57 citations

Journal ArticleDOI
11 Jul 2017-ACS Nano
TL;DR: The success of NDI-based polymers indicates that planar conjugated polymer with a preferred orientation could be useful in developing high-performance solution-processed Si-organic heterojunction photovoltaic devices.
Abstract: Silicon-organic heterojunction solar cells suffer from a noticeable weakness of inefficient rear contact. To improve this rear contact quality, here, two solution-processed organic n-type donor-acceptor naphthalene diimide (NDI)-based conjugated polymers of N2200 and fluorinated analogue F-N2200 are explored to reduce the contact resistance as well as to passivate the Si surface. Both N2200 and F-N2200 exhibit high electron mobility due to their planar structure and strong intermolecular stacking, thus allowing them to act as excellent transporting layers. Preferential orientation of the polymers leads to reduce contact resistance between Si and cathode aluminum, which can enhance electron extraction. More importantly, the substitution of fluorine atoms for hydrogen atoms within the conjugated polymer can strengthen the intermolecular stacking and improve the polymer-Si electronic contact due to the existence of F···H interactions. The power conversion efficiencies of Si-PEDOT:PSS solar cells increased from 12.6 to 14.5% as a consequence of incorporating the F-N2200 polymer interlayers. Subsequently, in-depth density functional theory simulations confirm that the polymer orientation plays a critical role on the polymer-Si contact quality. The success of NDI-based polymers indicates that planar conjugated polymer with a preferred orientation could be useful in developing high-performance solution-processed Si-organic heterojunction photovoltaic devices.

57 citations

Journal ArticleDOI
TL;DR: In this paper, molecular doping of the pentacene thin film in the contact reduces the contact resistance and allows a greater increase in field effect mobility with decreasing channel length, achieving a submicrometer-channel transistor with clear saturation characteristics and low-voltage operation.
Abstract: Short-channel effect in organic thin film transistors with top-contact configuration is effectively suppressed to enhance the performance. The space charge limited current, which prevents the appearance of output saturation behavior, is sufficiently suppressed by reducing the thickness of both the pentacene film and the gate insulator. Molecular doping of the pentacene thin film in the contact reduces the contact resistance and allows a greater increase in field-effect mobility with decreasing channel length. These structural optimizations realize a submicrometer-channel transistor with clear saturation characteristics and low-voltage operation.

57 citations

Journal ArticleDOI
TL;DR: In this article, the performance of TiN-coated 316L was studied in 0.05 M H 2 SO 4 + 2 Pm F − simulating proton exchange membrane fuel cell (PEMFC) environments using electrochemical method, and interfacial contact resistance was measured before and after potentiostatic polarization at operation potential for PEMFC.

57 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023213
2022432
2021286
2020384
2019528
2018503