Contact resistance

About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.

Contact resistance and mobility in back-gate graphene transistors

Abstract: Themetal-graphene contact resistance is one of themajor limiting factors toward the technological exploitation of graphene in electronic devices and sensors. High contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate back-gate graphenefield-effect transistors with different geometries to study the contact and channel resistance as well as the carriermobility as a function of gate voltage and temperature.We apply the transfer lengthmethod and the y-functionmethod showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of carriermobility dependence on the gate-voltage.We find that the gate voltagemodulates both the contact and the channel resistance in a similar way but does not change the carriermobility.We also show that raising the temperature lowers the carriermobility, has a negligible effect on the contact resistance, and can induce a transition from a semiconducting to ametallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally, we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrierfield-effectmobility and that a competitive contact resistance as low as 700Ω·μmcan be achieved by the zig-zag shaping of theNi contact.

Thermal Model for Hand-Object Interactions

Abstract: A thermal model is proposed that predicts the temperature responses of the skin and material surface during hand-object interactions as well as the heat flux exchanged when the fingerpad makes contact with an object. The surface features of the fingerpad were measured in order to estimate the thermal contact resistance which is included in the model. A simulation based on the model was performed to calculate the thermal responses of the fingerpad as it made contact with a range of materials with varying thermal properties. A thermal measurement system based on an infrared camera has been designed and fabricated to overcome the limitations imposed by the contact thermal sensors. This system will be used to evaluate the validity of the model in predicting the changes in skin temperature during contact.

Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl-2 inductively coupled plasma

Abstract: A room-temperature Ti/Al Ohmic contact on n-type GaN was obtained by surface treatment using Cl2 inductively coupled plasma treatment. The specific contact resistivity was dramatically decreased from the Schottky behavior to 9.4×10−6 Ω cm2 by the treatment. The binding energy of the Ga–N bond and the atomic ratio of Ga/N were simultaneously increased after the plasma treatment. This provides evidence that N vacancies, acting as donors for electrons, were produced at the etched surface, resulting in a shift of the Fermi level near to the conduction band. This leads to the reduction in contact resistivity through the decrease of the Schottky barrier for the conduction of electrons.

Characterization of Contact Resistance Stability in MEM Relays With Tungsten Electrodes

Abstract: The impact of device operating parameters on the ON-state resistance (RON) of microelectromechanical relays with tungsten (W) electrodes is reported. Due to the susceptibility of W to oxidation, RON increases undesirably over the device operating cycles. This issue is aggravated by Joule heating when the relay is in the on state. The experimental results confirm that shorter ON time, as well as shorter off time, provides for more stable RON with respect to the number of ON/OFF switching cycles.