Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: In this article, the contact resistance of rubrene single-crystal field effect transistors (FETs) with nickel electrodes was investigated by performing scaling experiments on devices with channel length ranging from 200 nm up to 300??m.
Abstract: We have investigated the contact resistance of rubrene single-crystal field-effect transistors (FETs) with nickel electrodes by performing scaling experiments on devices with channel length ranging from 200 nm up to 300??m. We find that the contact resistance can be as low as 100???cm with narrowly spread fluctuations. For comparison, we have also performed scaling experiments on similar gold-contacted devices, and found that the reproducibility of FETs with nickel electrodes is largely superior. These results indicate that nickel is a very promising electrode material for the reproducible fabrication of low resistance contacts in organic FETs.
56 citations
TL;DR: In this paper, defects in various cases are modeled by a nonlinear finite element method (FEM) to investigate the existence of interfaces, interfacial open and contacts in terms of thermal contact resistance, stress force nonlinearity, and optical discontinuity, in order to analyze their effects on the LED's thermal and optical performance.
Abstract: Defects in terms of voids, cracks, and delaminations are often generated in light-emitting diodes (LEDs) devices and modules. During various manufacturing processes, accelerated testing, inappropriate handling, and field applications, defects are most frequently induced in the early stage of process development. One loading is due to the nonuniform loads caused by temperature, moisture, and their gradients. In this research, defects in various cases are modeled by a nonlinear finite-element method (FEM) to investigate the existence of interfaces, interfacial open and contacts in terms of thermal contact resistance, stress force nonlinearity, and optical discontinuity, in order to analyze their effects on the LED's thermal and optical performance. The simulation results show that voids and delaminations in the die attachment would enhance the thermal resistance greatly and decrease the LED's light extraction efficiency, depending on the defects' sizes and locations generated in packaging.
56 citations
TL;DR: In this article, the authors presented an analytical model which correctly explains the 2D current-crowding effects observed in the cross-bridge Kelvin resistor (CBKR) and explained that the kelvin resistance measured by this device consists of two components, one due to specific resistivity and the other due to current flowing in the overlap region between the contact and the diffusion edges.
Abstract: This paper presents an analytical model which correctly explains the two-dimensional (2-D) current-crowding effects observed in the cross-bridge Kelvin resistor (CBKR). The model explains that the kelvin resistance measured by this device consists of two components, one due to specific resistivity and the other due to current flowing in the overlap region between the contact and the diffusion edges. The geometrical dependence of this second component is derived analytically and compared with two-dimensional numerical simulations. It becomes significant when specific contact resistivity \rho_{c} , where δ is the amount of overlap between edge of the contact and the edge of the diffusion path, and R s is the diffusion sheet resistance.
56 citations
TL;DR: Real time variation of the interfacial structure between an Al electrode and a poly(3-hexylthiophene) (P3HT):fullerene (PCBM) thin film during thermal annealing has been investigated using synchrotron X-rays and it is found that Al atoms diffuse into the organic layer to form a thin interlayer even during the deposition of an Al layer.
Abstract: Real time variation of the interfacial structure between an Al electrode and a poly(3-hexylthiophene) (P3HT):fullerene (PCBM) thin film during thermal annealing has been investigated using synchrotron X-rays. It is found that Al atoms diffuse into the organic layer to form a thin interlayer between the Al electrode and the organic layer even during the deposition of an Al layer. The interlayer thickness and the mass density of the interlayer increases if annealed above 120 °C. The interlayer thickness depends on the annealing processes and the inter-diffusion is accelerated by a fast annealing process. The Al diffusion reduces the preferred alignment of the (100) direction of the P3HT crystals from the surface normal direction and randomizes their orientation. The Al diffusion also helps to reduce the contact resistance in the P3HT:PCBM-based solar cells.
56 citations
TL;DR: Very low resistance nonalloyed ohmic contacts of Pt/Ti to 1.5×1019 cm−3 Zn−doped In0.53Ga0.47As have been formed by rapid thermal processing as mentioned in this paper.
Abstract: Very low resistance nonalloyed ohmic contacts of Pt/Ti to 1.5×1019 cm−3 Zn‐doped In0.53Ga0.47As have been formed by rapid thermal processing. These contacts were ohmic as deposited with a specific contact resistance value of 3.0×10−4 Ω cm2. Cross‐sectional transmission electron microscopy showed a very limited interfacial reacted layer (20 nm thick) between the Ti and the InGaAs as a result of heating at 450 °C for 30 s. The interfacial layer contained mostly InAs and a small portion of other five binary phases. Heating at 500 °C or higher temperatures resulted in an extensive interaction and degradation of the contact. The contact formed at 450 °C, 30 s exhibited tensile stress of 5.6×109 dyne cm−2 at the Ti/Pt bilayer, but the metal adhesion remained strong. Rapid thermal processing at 450 °C for 30 s decreased the specific contact resistance to a minimum with an extremely low value of 3.4×10−8 Ω cm2 (0.08 Ω mm), which is very close to the theoretical prediction.
55 citations