Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: In this article, a micro-mechanical force sensor integrated with a four-wire electrical contact characterization capability is presented to evaluate low force and small area electrical contacts comprised of thin films.
Abstract: The continued miniaturization of integrated circuits (ICs), interconnects, relays, and packaging critically depends on the electrical properties of low force electrical contacts This paper presents the design, fabrication, and characterization a micro-mechanical force sensor integrated with a four-wire electrical contact characterization capability to evaluate low force and small area electrical contacts comprised of thin films The sensor consists of a silicon cantilever beam with a piezoresistive force sensor suitable for high-accuracy force measurements in the nanoNewton to milliNewton range The work presented expands the characterization capabilities for the electromechanical properties of such contacts over what is currently available, using instrumented micro-electromechanical system (MEMS) force sensors The effects of varied contact tip dimensions and different gold films manufactured using standard semiconductor processing techniques are studied The cantilevers are evaluated for force sensitivity, range, noise and sensitivity of four-wire contact resistance measurements The piezoresistors have a gage factor of about 35 and noise of
55 citations
TL;DR: In this paper, the authors investigated the dependence of the field effect mobility on the channel length and found that the dependence was greatly affected by the value of the contact resistance RC, and that a high RCW 200 cm resulted in a significant drop 22.3% in the normalized field-effect mobility for the short channel device 10 m, while contact-limited behavior was hardly seen for the device with a low RCW 23 cm.
Abstract: High-performance thin-film transistors TFTs, in which the channel material consisted of amorphous indium-gallium-zinc oxide a-IGZO with a bottom gate architecture, were fabricated for array applications. It was found that the dependence of the field-effect mobility on the channel length was greatly affected by the value of the contact resistance RC. A high contact resistance RCW 200 cm resulted in a significant drop 22.3% in the normalized field-effect mobility for the short channel device 10 m, while contact-limited behavior was hardly seen for the device with a low contact resistance RCW 23 cm. The difference in the channel length dependence of the field-effect mobility was comprehensively investigated based on the conduction mechanism. The fabricated n-channel a-IGZO TFTs with W/L =1 0/10 m exhibited a field-effect mobility of 12.6 cm 2 /V s, threshold voltage of 4.7 V, on/off ratio of 10 8 , and subthreshold gate swing of 0.56 V/decade.
55 citations
TL;DR: In this article, a contacting variant for solid oxide fuel cells is presented in which the conductivity of the interconnect is ensured by contact elements made of fine silver, which are soldered to render them capable of withstanding temperature cycling.
Abstract: In the following, a contacting variant for solid oxide fuel cells will be presented in which the conductivity of the interconnect is ensured by contact elements made of fine silver. To this end, the interconnect has holes through which the contact elements of fine silver (99.9 wt% Ag) are introduced and then pressed. This pressing process and the thermal expansion of the silver during heating leads to a gastight joint. The silver penetrations are additionally soldered to render them capable of withstanding temperature cycling. Contact resistance measurements and corrosion studies at 800 °C in air or Ar/4 vol.% H2/3 vol.% H2O demonstrate the functionality of the contacting variant under the described conditions. The experimental results indicate that contacting by means of silver contact elements ensures long-term stability up to operating temperatures of 800 °C. Current transmission via the silver contact elements means that a large number of materials are conceivable as the interconnect material. In the following application, an FeCrAl steel (1.4767, Aluchrom Y Hf—trade name Krupp Thyssen Nirosta) with 5.7 wt.% aluminium was used. At the operating temperature, a dense aluminium oxide layer forms on its surface which prevents the vaporization, for example of chromium oxide species, during fuel cell operation.
55 citations
TL;DR: In this article, the impact strength of conductive adhesives was evaluated using the National Center for Manufacturing Science (NCMS) standard drop test procedure, and the authors found that the rubber-modified epoxy resins and two synthesized epoxide-terminated polyurethane resins improved the impact performance.
Abstract: Develops conductive adhesives with stable contact resistance and desirable impact performance. Effects of purity of the resins and moisture absorption on contact resistance are investigated. Several different additives (oxygen scavengers and corrosion inhibitors) on contact resistance stability during elevated temperature and humidity aging are studied, and effective additives are identified. Then, several rubber-modified epoxy resins and two synthesized epoxide-terminated polyurethane resins are introduced into ECA formulations to determine their effects on impact strength. The loss factor, tan /spl delta/, of each formulation is measured using a dynamic mechanical analyzer (DMA) and impact strength is evaluated using the National Center for Manufacturing Science (NCMS) standard drop test procedure. Finally, high performance conductive adhesives are formulated by combining the modified resins and the effective additives. It is found that 1) purity of the resins and moisture absorption of the formulation affect the contact resistance stability of an ECA; 2) the oxygen scavengers and corrosion inhibitors can delay contact resistance shift; 3) one of the corrosion inhibitors is very effective in stabilizing the contact resistance; 4) some rubber-modified epoxy resins and the epoxide-terminated polyurethane resins can provide the conductive adhesives with superior impact performance; and 5) conductive adhesives with stable contact resistance and desirable impact performance are developed.
55 citations
TL;DR: In this article, a van der Waals texturation (pseudo-epitaxy) onto dangling bond sulfur terminated surfaces, these surfaces being ordered, has been discussed, and the electrical properties of these W/MoS2/W structures have been investigated by analyzing the behavior of the currentvoltage characteristics as a function of the measuring temperature.
Abstract: Textured films of molybdenum disulfide have been obtained by solid state reaction between the constituents in thin films form when a (200) oriented tungsten sheet is used as substrate. The crystallites have their c axis perpendicular to the plane of the substrate. The annealing conditions are T=1073 K and t=30 min. The films are stoichoimetric and p type. Such highly textured films are achieved without foreign atom addition (Ni, Co…). It appears, as shown by x-ray photoelectron spectroscopy, that a thin WS2 layer is present at the interface W/MoS2. The crystallization process is discussed by a van der Waals texturation (pseudoepitaxy) onto dangling bond sulfur terminated surfaces, these surfaces being ordered. After characterization of the W/MoS2 structure by x-ray diffraction and x-ray photoelectron spectroscopy, an upper electrode of tungsten was deposited by sputtering. The electrical properties of these W/MoS2/W structures have been investigated by analyzing the behavior of the current–voltage characteristics as a function of the measuring temperature. It is shown that an ohmic contact is obtained with a contact resistance smaller than the resistance of the MoS2 film.
55 citations