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Contact resistance

About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.


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Journal ArticleDOI
TL;DR: In this article, the electrical contact resistance (ECR) was measured as a function of apparent contact pressure and was found to be on the order of 10/sup 5/ /spl Omega.
Abstract: The electrical contact resistance (ECR) was evaluated as an in situ diagnostic tool for the contact interface behavior of microelectromechanical systems (MEMS). Special polycrystalline silicon (polysilicon) MEMS devices fabricated by surface micromachining were used to study polysilicon/native oxide/polysilicon contact interfaces. ECR measurements obtained during monotonic contact loading and unloading and cyclic contact loading are interpreted in the context of a previous ECR theory. For monotonic contact loading and unloading, the ECR was measured as a function of apparent contact pressure and was found to be on the order of 10/sup 5/ /spl Omega/. The fairly moderate decrease of the ECR with the increase of the contact load is attributed to the intrinsic nonohmic behavior of the native oxide film. Experimental ECR results are correlated with analytical solutions to determine the oxide film thickness. The results indicate that the oxide film remains nearly intact under monotonic contact loading and unloading. Differences in the ECR behavior during unloading are discussed in light of the statistical distribution of asperity nanocontacts and the prevailing deformation mode. During cyclic contact loading, rupture of the oxide film leads to the formation of polysilicon/polysilicon nanocontacts, which produces ECR values in the range of 10/sup 2/-10/sup 3/ /spl Omega/. The erratic behavior of the ECR during cyclic contact loading is related to the pronounced effects of the insulating oxide film and oxide debris trapped at the contact interface.

54 citations

Journal ArticleDOI
TL;DR: In this article, the temperature behavior of the structural and electrical properties of Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures was investigated.
Abstract: This letter reports on the temperature behavior of the structural and electrical properties of Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 °C showed a decreasing temperature behavior of the specific contact resistance ρC, which was explained by a thermionic field emission mechanism, an increasing trend is observed in the contacts formed at 850 °C. In this case, ρC exhibits a “metal-like” behavior, i.e., describable by a T1.8 dependence. The microstructural analysis of the interfacial region allowed to explain the results with the formation of metallic intrusions contacting directly the two dimensional electron gas.

54 citations

Journal ArticleDOI
TL;DR: In this paper, the authors report viable edge contact formation to hexagonal boron nitride (hBN) encapsulated monolayer MoS2, by combining reactive ion etching, in situ Ar+ sputtering and annealing.
Abstract: Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer two-dimensional (2D) semiconductors exists. Here we report viable edge contact formation to hexagonal boron nitride (hBN) encapsulated monolayer MoS2. By combining reactive ion etching, in situ Ar+ sputtering and annealing, we achieve a relatively low edge contact resistance, high mobility (up to ∼30 cm2 V-1 s-1) and high on-current density (>50 μA/μm at VDS = 3V), comparable to top contacts. Furthermore, the atomically smooth hBN environment also preserves the intrinsic MoS2 channel quality during fabrication, leading to a steep subthreshold swing of 116 mV/dec with a negligible hysteresis. Hence, edge contacts are highly promising for large-scale practical implementation of encapsulated heterostructure devices, especially those involving air sensitive materials, and can be arbitrarily narrow, which opens the door to further shrinkage of 2D device footprint.

54 citations

Journal ArticleDOI
Yuan Taur1, J.Y.-C. Sun2, D. Moy1, L.K. Wang1, Bijan Davari1, S.P. Klepner1, Chung-Yu Ting1 
TL;DR: In this article, the authors studied the contact resistance between TiSi 2 and n+-p+source-drain in CMOS for a variety of junction profiles and silicide thicknesses and showed that the measured contact resistance is consistent with the transmission line model for electrically long contacts.
Abstract: The contact resistance between TiSi 2 and n+-p+source-drain in CMOS is studied for a variety of junction profiles and silicide thicknesses. It is shown that the measured contact resistance is consistent with the transmission-line model for electrically long contacts. The contact contribution to the total device series resistance can be significant if excessive silicon is consumed during silicide formation. Contact resistivities of 3 × 10-7and 1 × 10-6Ω . cm2can be obtained for 0.15-0.20-µm-deep arsenic and boron junctions, respectively, if the interface doping concentration is kept at 1 × 1020/cm3. Furthermore, low-temperature measurements show that the contact resistivity is nearly constant from 300 to 77 K, as would be expected from a tunneling-dominated current transport at the TiSi 2 -n+and TiSi 2 -P+interfaces.

54 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of dynamic compression on the performance of a membrane electrode assembly (MEA) with dimension change was investigated using a cell compression unit (CCU) and Electrochemical impedance spectroscopy.

54 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023213
2022432
2021286
2020384
2019528
2018503