Contact resistance

About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.

Metals on 6H-SiC: contact formation from the materials science point of view

Abstract: Metal-6H-SiC interface reactions were studied under three different aspects; phase relations, diffusion reaction, and electronic properties. For the first, powder pellets were annealed at different temperatures to achieve thermodynamic equilibrium. The resulting phases were evaluated using XRD. For the second, bulk diffusion couples were prepared and annealed. Cross sections of the reaction layers were investigated in a SEM using secondary and backscattered electrons as well as energy dispersive X-ray analysis. For the third, the electronic properties of thin film metal contacts were evaluated as a function of annealing treatment. The results of the three aspects were combined. The four metals investigated (Ni, Cr, W, Ti) are unstable on 6H-SiC. They react at elevated temperatures in accordance with the phase diagrams but in different morphologies. Ni is the most, W the least reactive metal. All metals form ohmic contacts on n-type 6H-SiC after an appropriate annealing procedure. Ti gives the lowest, Ni the highest contact resistance. Ti forms either ohmic or Schottky contacts depending on the annealing temperature which correlates with a change in the diffusion path.

Effect of connection design on the contact resistance of high power overlapping bolted joints

Abstract: The effect of design changes on the contact resistance of overlapping bolted/pad joints was investigated. It was found that slanting the edges of the bus-bars/pads under 45/spl deg/ and making slots in the overlapping areas significantly reduce the contact resistance of a joint and improve its mechanical integrity. These improvements are results of enlarged contact area and creation of a uniform current distribution at the contact interface.

Semiconductor device having contact resistance reducing layer

Abstract: In a wide band cap semiconductor, a GaPx N1-x (01≦x≦09) layer is inserted between a layer comprising AlGaInN and an electrode, The potential barrier between the electrode and the surface layer can be reduced Contact resistance can be decreased, and ohmic contact can be easily taken up

Electric Double Layer Transistor of Organic Semiconductor Crystals in a Four-Probe Configuration

Abstract: Electric double layer field-effect transistors (EDL-FETs) of rubrene single crystals using a liquid polymer electrolyte were studied in a four-probe configuration. The channel sheet resistance and the contact resistance normalized by the contact width were 0.24 MΩ and 0.83 kΩ cm in the ON-state, respectively. These values are smaller than those of previously reported conventional rubrene crystal FETs, corroborating the high carrier density accumulation in the EDL-FET. In addition, peculiar peak behaviour in the transfer characteristics did not appear in the gate voltage dependence of four-probe conductivity. This observation leads us to conclude that the peak is ascribed to the increase of the contact resistance in the high gate voltage region.

Semiconductor interconnect having test structures for evaluating electrical characteristics of the interconnect

Abstract: An interconnect for a semiconductor die includes integrally formed test structures for evaluating various electrical characteristics of the interconnect. The test structures can include Kelvin structures, van der Pauw structures, resistors, capacitors, contact chains, via chains, serpentine test structures, and antenna test structures. Among the electrical characteristics that can be evaluated are the resistivity of contact member, conductor and substrate components of the interconnect, contact resistance between the contact members and conductors and capacitance of the contact members and conductors with respect to the substrate.