Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: In this paper, the effect of electron tunneling on the electrical conductivity of carbon nanotube (CNT) polymer nanocomposites was investigated using Monte Carlo simulations, where the tunneling resistance between CNTs was established based on the electron transport theory.
Abstract: In this paper, we examined the effect of electron tunneling upon the electrical conductivity of carbon nanotube (CNT) polymer nanocomposites. A CNT percolating network model was developed to account for the random distribution of the CNT network using Monte Carlo simulations, where the tunneling resistance between CNTs was established based on the electron transport theory. Our work shows several novel features that result from this tunneling resistance: (i) direct contact resistance is the result of one-dimensional electron ballistic tunneling between two adjacent CNTs, (ii) the nanoscale CNT-CNT contact resistance should be represented by the Landauer-Buttiker (L-B) formula, which accounts for both tunneling and direct contact resistances, and (iii) the difference in contact resistance between single-walled CNTs (SWCNTs) and multi-walled CNTs (MWCNTs) can be modeled by the channel number in the L-B model. The model predictions reveal that the contact resistance due to electron tunneling effects in nanocomposites with dispersed SWCNTs plays a more dominant role than those with MWCNTs. These results compare favorably with existing experimental data and demonstrate that the proposed model can properly estimate the electrical conductivity of nanocomposites containing homogeneously dispersed percolating CNT network.
247 citations
TL;DR: In this paper, a donor doping technique for β-Ga2O3 by using Si-ion (Si+) implantation was developed, which achieved a high activation efficiency of above 60% after annealing in a nitrogen gas atmosphere at a relatively low temperature of 900-1000 °C.
Abstract: We developed a donor doping technique for β-Ga2O3 by using Si-ion (Si+) implantation. For the implanted Ga2O3 substrates with Si+=1×1019–5×1019 cm-3, a high activation efficiency of above 60% was obtained after annealing in a nitrogen gas atmosphere at a relatively low temperature of 900–1000 °C. Annealed Ti/Au electrodes fabricated on the implanted Ga2O3 layers showed ohmic behavior. The Ga2O3 with Si+=5×1019 cm-3 showed the lowest specific contact resistance and resistivity obtained in this work of 4.6×10-6 Ωcm2 and 1.4 mΩcm, respectively.
246 citations
TL;DR: In this paper, the p-side-up mesa structure GaN/InGaN LEDs with high contact resistance and p-type confinement layer resistivity have a relatively uniform current distribution.
Abstract: GaN/InGaN light emitting diodes (LEDs) grown on sapphire substrates have current transport along the lateral direction due to the insulating nature of the substrate. The finite resistance of the n-type GaN buffer layer causes the pn junction current to be nonuniform and “crowd” near the edge of the contact. The current-crowding effect is analyzed both theoretically and experimentally for p-side-up mesa structure GaN/InGaN LEDs. The calculation yields an exponential decay of the current distribution under the p-type contact with a characteristic current spreading length, Ls. It is shown that GaN/InGaN LEDs with high p-type contact resistance and p-type confinement layer resistivity have a relatively uniform current distribution. However, as the p-type GaN conductivity and p-type ohmic contact conductivity is improved, significant current crowding near the contact edge will occur. The current crowding effect is analyzed experimentally in GaN/InGaN LEDs emitting in the blue spectral range. Experimental resul...
243 citations
TL;DR: In this article, the authors developed low resistance, refractory ohmic contact materials to n-type GaAs using the deposition and annealing techniques, and it was found that the growth of homo-or hetero-epitaxial intermediate semiconductor layers (ISL) on the GaAs surface was essential for the low resistance Ohmic contact formation.
242 citations
TL;DR: In this paper, a clean metal contact resistance model was used to study the contact resistance of microswitches with gold contacts, and the measured contact resistance (measured as a function of contact force) with the characteristics predicted by the model showed approximate agreement.
Abstract: Surface micromachined, electrostatically actuated microswitches have been developed at Northeastern University. Microswitches with gold contacts typically have an initial contact resistance of the order of 0.1 Ω over the first 10 5 cycles of lifetime while cold-switching 4 mA, and have a current handling capability of about 20 mA. In general, the contact resistance decreases over the first few thousand switch cycles, and degrades progressively when the switches are cycled beyond approximately 10 6 cycles. In this work, the microswitch contact resistance is studied on the basis of a clean metal contact resistance model. Comparison of the measured contact resistance (measured as a function of contact force) with the characteristics predicted by the model shows approximate agreement. The discrepancies between the model characteristics and measurements are discussed briefly.
236 citations