Contact resistance

About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.

Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device

Abstract: A method and an apparatus of fabricating a metal interconnection in a contact hole of a semiconductor device reduces contact resistance and improves step coverage. A contact hole is opened in an interlayer insulating film formed on a semiconductor substrate. A conductive layer used as an ohmic contact layer is formed on the interlayer insulating film including the contact hole. An upper surface of the conductive layer is nitrided to form a protective layer. An ALD (atomic layer deposition)-metal barrier layer is formed on the protective layer. The resulting metal barrier layer has good step coverage and no impurities, and the protective layer prevents defects in the conductive layer caused by precursor impurities used during the formation of the metal barrier layer.

Alloyed ohmic contacts to GaAs

Abstract: The alloyed AuGe‐based contact is widely used to make ohmic connections to GaAs. It has been presumed that the regrown alloyed region is heavily doped so that carrier transport is by tunneling. The electrical and metallurgical properties of this heterogeneous system have been extensively studied and have been shown to be spatially nonuniform. Details of fabrication technique, analysis, and theoretical interpretation of its behavior will be discussed. It is suggested that the observed (doping)−1 dependence of the contact resistance is due to spreading resistance domination of current paths through submicron regions of the contact area where heavy doping occurs.

Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1

Abstract: We report on charge transport in organic field-effect transistors based on poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer with saturation field-effect mobilities as large as 1cm2V−1s−1. This is achieved by employing Pt instead of the commonly used Au as the contacting electrode and allows for a significant reduction in the metal/polymer contact resistance. The mobility increases as a function of decreasing channel length, consistent with a Poole-Frenkel model of charge transport, and reaches record mobilities of 1cm2V−1s−1 or more at channel lengths on the order of few microns in an undoped solution-processed polymer cast on an oxide gate dielectric.

Current crowding on metal contacts to planar devices

Abstract: A simple transmission line model is applied to the contact region between metal and diffusion layer in planar devices. Taking into account the sheet resistance of the diffusion layer and an ohmic specific contact resistance between metal and semiconductor the theoretical current distribution across the contact is calculated and compared with the results obtained with a model suggested by Kennedy and Murley. Experimental data are given that confirm the validity of the transmission line model.

Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAs

Abstract: The interface structures resulting from the alloying reactions between a Au/Ni/Au‐Ge composite film and a (100) GaAs substrate were studied by transmission electron microscopy and scanning transmission electron microscopy. Electron microscope examinations of the cross‐sectional samples prepared in this study offered excellent lateral and depth resolution of local structures which are not available by other analytical techniques used previously in similar studies. The distributions and chemical compositions of various phases formed, and the morphologies of the interfaces between these phases were monitored and compared with the measured contact resistances at three different stages of alloying. A correlation between the interface structure and the contact resistance was found.