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Contact resistance

About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.


Papers
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Journal ArticleDOI
TL;DR: In this article, the Ni/YSZ cermet material was investigated as the anode of a solid oxide fuel cell, and the power output, IR resistance and polarization resistance were measured as a function of Ni/YZ volume ratio.

206 citations

Journal ArticleDOI
TL;DR: In this article, a metal aerosol jet printing is used for the front side metallization of highly efficient industrial silicon solar cells, which features a low contact resistance and good mechanical adhesion to the silicon surface.
Abstract: Metal aerosol jet printing is a new non-contact direct-write technique for the front side metallization of highly efficient industrial silicon solar cells. With this technique the first layer of a two-layer contact structure is created. It features a low contact resistance and good mechanical adhesion to the silicon surface. The second layer is formed by light-induced silver plating (LIP) to increase the line conductivity. To form the first layer a metal-containing aerosol is created in the printer and focused via a second surrounding gas stream through a nozzle and deposited onto the substrate. The focussing gas avoids the contact between the aerosol and the nozzle tip. In addition, line widths significantly smaller than the outlet diameter of the nozzle tip can be reached. Fine and continuous lines with a width of 14 μm were printed using a metal organic ink. As the adhesion of these layers was not sufficient, a commercially available screen-printing paste for solar cell metallization was modified and tested. Monocrystalline silicon solar cells of 12·5cm X 12·5cm with an aluminum back surface field were processed, achieving energy conversion efficiencies up to 17·8%.

204 citations

Patent
31 Jul 2006
TL;DR: In this article, manufacturing methods and integrated circuits for lowered contact resistance are disclosed that have contacts of reduced size, and they have been shown to reduce the resistance of programmable resistive RAM cells.
Abstract: Programmable resistive RAM cells have a resistance that depends on the size of the contacts. Manufacturing methods and integrated circuits for lowered contact resistance are disclosed that have contacts of reduced size.

204 citations

Journal ArticleDOI
TL;DR: In this paper, a physically motivated equivalent circuit model of LiFePO4-cathode was proposed to evaluate the rate determining processes of Li-Ion batteries in order to separate performance limiting factors.
Abstract: Lithium iron phosphate is a promising candidate material for Li-Ion batteries. In this study, the rate determining processes are assessed in more detail in order to separate performance limiting factors. Electrochemical impedance spectroscopy (EIS) data of experimental LiFePO4/Lithium-cells are deconvoluted by the method of distribution of relaxation times (DRT), what necessitates a pre-processing of the capacitive branch. This results in a separation into cathode and anode polarization processes and in a proposition of a physically motivated equivalent circuit model. We identify three different polarization processes of the LiFePO4-cathode (i) solid state diffusion, (ii) charge transfer (cathode/electrolyte) and (iii) contact resistance (cathode/current collector). Our model is then applied to EIS data sets covering varied temperature (0° to 30°C) and state of charge (10% to 100%). Activation energy, polarization resistance and frequency range are determined separately for all cathode processes involved. Finally, the tape-casted LiFePO4–cathode sheet is modified in porosity, thickness and contact area between cathode/electrolyte and cathode/current collector by a calendering process. Charge transfer resistance and contact resistance respond readily in polarization and relaxation frequency.

203 citations

Journal ArticleDOI
TL;DR: In this article, structural and electrical properties of polycrystalline thin films of an n-channel organic semiconductor, N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic dimide (PTCDI-C5), were studied using x-ray diffraction and atomic force microscopy.
Abstract: We report structural and electrical properties in thin films of an n-channel organic semiconductor, N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic dimide (PTCDI–C5). The structure of polycrystalline thin films of PTCDI–C5 was studied using x-ray diffraction and atomic force microscopy. Films order with single crystal-like packing, and the direction of π-π overlap is in the substrate plane. Organic thin film transistors (OTFTs) based on PTCDI–C5 were fabricated on hydrophobic and hydrophilic substrates. OTFTs showed effective mobility as high as 0.1 cm2/V s. Contact resistance of operating OTFTs was studied using resistance versus length plots and a four-probe method for three different contact metals (Au, Ag, Ca). Typical OTFTs had a specific contact resistance of 8×104 Ω cm at high gate voltage. There was no dependence of contact resistance with contact metal. Variable temperature measurements revealed that film resistance in the OTFT was activated in the temperature range 100–300 K, with typical activa...

202 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023213
2022432
2021286
2020384
2019528
2018503