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Contact resistance

About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.


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Journal ArticleDOI
TL;DR: The specific contact resistance of an ohmic contact is discussed in this paper, including ways to calculate and measure this parameter, and various contact resistance measures for n-and p-type hexagonal SiC contacts are discussed.
Abstract: The specific contact resistance of an ohmic contact will be discussed including ways to calculate and measure this parameter. Ohmic contacts to n- and p-type hexagonal SiC will then be detailed. Low resistance n-type ohmic contacts are predominately fabricated by annealing a refractory metal, thereby forming a silicide with a lowered Schottky barrier height at the metal-SiC interface. P-type contacts on the other hand generally use Al or Al alloys which upon annealing enable Al to diffuse into the SiC thus resulting in ohmic properties. Aluminium alloys however suffer from many problems which will be discussed. Other novel contacting schemes to p-type SiC will also be reviewed.

201 citations

Journal ArticleDOI
TL;DR: In this paper, a finite element analysis is carried out in order to investigate the role of thermal contact resistance on heat management within a simple central processing unit (CPU)/heat sink assembly, and the effect of surface roughness characteristics, mechanical and thermal properties of the contacting bodies, applied contact pressures and the use of thermal interface materials on the maximum temperature experienced by the CPU is investigated.

201 citations

Journal ArticleDOI
TL;DR: In this paper, an epitaxial layer of n−Ga1−xInxAs grown by molecular beam epitaxy on n•GaAs which is graded in composition from x = 0 at the GaAs interface to 0.8?x?1.0 at the surface will produce a structure with a nearly zero Schottky barrier height for the metal-Ga 1−xAs interface and hence a low resistance ohmic contact.
Abstract: Ohmic contacts were studied on structures which utilize the fact that for InAs surfaces Fermi level pinning occurs at or in the conduction band. It was found that an epitaxial layer of n‐Ga1−xInxAs grown by molecular beam epitaxy on n‐GaAs which is graded in composition from x = 0 at the GaAs interface to 0.8?x?1.0 at the surface will produce a structure with a nearly zero Schottky barrier height for the metal–Ga1−xInxAs interface and hence a low resistance ohmic contact. A transmission line measurement of non‐alloyed contact resistance of 5×10−7

200 citations

Journal ArticleDOI
TL;DR: In this paper, the authors obtained a 10−10 cm2 contact surface resistivity for both silver and gold contacts to high Tc superconductors, which is a reduction by about eight orders of magnitude from the contact resistivity of indium solder connections.
Abstract: Contact surface resistivities (product of contact resistance and area) in the 10−10 Ω cm2 range have been obtained for both silver and gold contacts to high Tc superconductors. This is a reduction by about eight orders of magnitude from the contact resistivity of indium solder connections. The contact resistivity is low enough to be considered for both on‐chip and package interconnect applications. The contacts were formed by sputter depositing either silver or gold at low temperatures (<100 °C) on a clean surface of Y1 Ba2 Cu3 O7−δ (YBCO) and later annealing the contacts in oxygen. Annealing temperature characteristics show that for bulk‐sintered YBCO samples there is a sharp decrease in contact resistivity after annealing silver/YBCO contacts in oxygen for 1 h at temperatures above ∼500 °C and gold/YBCO contacts for 1 h above ∼600 °C. Oxygen annealing for longer times (8 h) did not reduce the contact resistivity of silver contacts as much as annealing for 1 h. Auger microprobe analysis shows that indium...

198 citations

Journal ArticleDOI
16 Jun 2016-ACS Nano
TL;DR: A scalable method to fabricate ohmic graphene edge contacts to two representative monolayer TMDs, MoS2 and WS2, which show linear current-voltage characteristics at room temperature, with ohmic behavior maintained down to liquid helium temperatures.
Abstract: With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for monolayers of semiconducting transition-metal dichalcogenides (TMDs), which are promising candidates for atomically thin electronics. Ideal electrical contacts to them would require the use of similarly thin electrode materials while maintaining low contact resistances. Here we report a scalable method to fabricate ohmic graphene edge contacts to two representative monolayer TMDs, MoS2 and WS2. The graphene and TMD layer are laterally connected with wafer-scale homogeneity, no observable overlap or gap, and a low average contact resistance of 30 kΩ·μm. The resulting graphene edge contacts show linear current–voltage (I–V) characteristics at room temperature, with ohmic behavior maintained down to liquid helium temperatures.

198 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023213
2022432
2021286
2020384
2019528
2018503