Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: In this article, the electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-GaN (doping level 5×1017 cm−3) were studied.
Abstract: The electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au (30 nm/100 nm/30 nm/30 nm) multilayer Ohmic contacts to n-GaN (doping level 5×1017 cm−3) were studied. The lowest contact resistivity derived from the annealed contact was ρS=3.0×10−6Ω cm2. The contacts were robust and showed high-thermal stability. X-ray diffraction and Auger electron spectroscopy studies were made to investigate the microstructure of the annealed contacts. The key to the success of the contact was the Ti layers placed on both sides of the Al layer. Upon annealing, there occurred both in-diffusion and out-diffusion of the Ti layer in intimate contact with the GaN film. The in-diffusion of this led to the formation of TiN, while the out-diffusion of this led to the formation of Ti–Al alloys. The second Ti layer also in-diffused and out-diffused during annealing. However, due to the presence of Au, the out-diffusion was marginalized, and the in-diffusion was higher than the out-diffusion. The in-diffusion led to th...
153 citations
TL;DR: In this article, the authors proposed two effective methods for estimating the contact resistance between the bipolar plate and the gas diffusion layer (GDL) based on an experimental contact resistance-pressure constitutive relation.
153 citations
TL;DR: In this paper, the authors present results on bipolar plate materials development using economical Fe-based alloys, which are exposed to very different potentials by electrochemical contact with the electrodes and great demands are made on the bipolar plates with regard to the corrosion behaviour and contact resistance.
152 citations
TL;DR: In this article, a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm−3).
Abstract: We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm−3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current–voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10−4 Ω cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere.
151 citations
TL;DR: In this paper, contact heating in microelectromechanical systems (MEMS) switches with contact spot sizes less than 100 nm in diameter was explored and experiments were conducted to demonstrate that contact heating causes a drop in contact resistance.
Abstract: This paper explores contact heating in microelectromechanical systems (MEMS) switches with contact spot sizes less than 100 nm in diameter. Experiments are conducted to demonstrate that contact heating causes a drop in contact resistance. However, existing theory is shown to over-predict heating for MEMS switch contacts because it does not consider ballistic transport of electrons in the contact. Therefore, we extend the theory and develop a predictive model that shows excellent agreement with the experimental results. It is also observed that mechanical cycling causes an increase in contact resistance. We identify this effect as related to the build-up of an insulating film and demonstrate operational conditions to prevent an increase in contact resistance. The improved understanding of contact behavior gained through our modeling and experiments allows switch performance to be improved.
150 citations