Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: This demonstration of contact interface engineering with CVD-grown MoS2 and graphene is a key step toward the practical application of atomically thin TMDC-based devices with low-resistance contacts for high-performance large-area electronics and optoelectronics.
Abstract: 2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post-silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high-performance devices while adapting for large-area fabrication is still in its nascent stages. In this study, graphene/Ag contacts are introduced into MoS2 devices, for which a graphene film synthesized by chemical vapor deposition (CVD) is inserted between a CVD-grown MoS2 film and a Ag electrode as an interfacial layer. The MoS2 field-effect transistors with graphene/Ag contacts show improved electrical and photoelectrical properties, achieving a field-effect mobility of 35 cm2 V-1 s-1 , an on/off current ratio of 4 × 108 , and a photoresponsivity of 2160 A W-1 , compared to those of devices with conventional Ti/Au contacts. These improvements are attributed to the low work function of Ag and the tunability of graphene Fermi level; the n-doping of Ag in graphene decreases its Fermi level, thereby reducing the Schottky barrier height and contact resistance between the MoS2 and electrodes. This demonstration of contact interface engineering with CVD-grown MoS2 and graphene is a key step toward the practical application of atomically thin TMDC-based devices with low-resistance contacts for high-performance large-area electronics and optoelectronics.
147 citations
TL;DR: In this article, the interfacial structure, the currentvoltage (I−V) characteristics, and contact resistance of metal electrode−carbon nanotube contacts for five metals, Ti, Pd, Pt, Cu, and Au, based on first-principles quantum mechanical density functional and matrix Green's function methods.
Abstract: We report on the interfacial structure, the current−voltage (I−V) characteristics, and contact resistance of metal electrode−carbon nanotube contacts for five metals, Ti, Pd, Pt, Cu, and Au, based on first-principles quantum mechanical density functional and matrix Green's function methods. We find that Ti leads to the lowest contact resistance followed by Pd, Pt, Cu, and Au. The sequence, Ti ≫ Pd > Pt > Cu > Au, correlates well with the predicted cohesive strength of the electrode−carbon interface. In addition Ti leads to linear I−V characteristics up to ∼1 V, suggesting an Ohmic contact for both metallic and semiconductor nanotubes. However, the high reactivity of the Ti electrode at the contact to the nanotube distorts the nanotube structure.
147 citations
Patent•
14 Jan 2003
TL;DR: In this paper, the Fermi level of the semiconductor channel is depinned in a region near the junction and the junction has a specific contact resistance of less than approximately 1000 Ω-μm 2.
Abstract: A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein the channel and at least one of the source or the drain are separated by an interface layer so as to form a channel-interface layer-source/drain junction in which a Fermi level of the semiconductor channel is depinned in a region near the junction and the junction has a specific contact resistance of less than approximately 1000 Ω-μm 2 . The interface layer may include a passivating material such as a nitride, a fluoride, an oxide, an oxynitride, a hydride and/or an arsenide of the semiconductor of the channel. In some cases, the interface layer consists essentially of a monolayer configured to depin the Fermi level of the semiconductor of the channel, or an amount of passivation material sufficient to terminate all or a sufficient number of dangling bonds of the semiconductor channel to achieve chemical stability of the surface. Also, the interface layer may include a separation layer of a material different than the passivating material. Where used, the separation layer has a thickness sufficient to reduce effects of metal-induced gap states in the semiconductor channel.
146 citations
TL;DR: In this paper, the electrical and dielectric properties of polyamide 6 (PA6)/multi-walled carbon nanotubes (MWCNT) nanocomposites prepared by melt mixing were investigated by employing dielectrics relaxation spectroscopy in broad frequency (10−2−106) and temperature ranges (from −150 to 150 °C).
146 citations
TL;DR: For the first time, n-type few-layer MoS2 field effect transistors (FETs) with graphene/Ti as the heterocontacts have been fabricated, showing more than 160-mA/mm drain current at 1-μm gate length with an ON-OFF current ratio of 107 as discussed by the authors.
Abstract: For the first time, n-type few-layer MoS2 field-effect transistors (FETs) with graphene/Ti as the heterocontacts have been fabricated, showing more than 160-mA/mm drain current at 1-μm gate length with an ON-OFF current ratio of 107 The enhanced electrical characteristic is confirmed in a nearly 21 times improvement in ON-resistance and a 33 times improvement in contact resistance with heterocontacts compared with the MoS2 FETs without graphene contact layer Temperature-dependent study on MoS2/graphene heterocontacts has been also performed, still unveiling its Schottky contact nature Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS2/graphene/metal heterocontacts structure
145 citations