Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: In this paper, a comparative study of the impedance response measured with composite electrodes and thin film electrodes of LiMn 2 O 4 was conducted, and the electrodes were prepared on different current collectors (i.e., aluminium, carbonised aluminium and gold) and the experiments were run at various state-of-discharge (SOD) and liquid electrolyte compositions.
127 citations
TL;DR: In this paper, an electrical contact resistance (ECR) theory is presented for conductive and rough surfaces separated by a thin insulating film, which is treated as an energy barrier that impedes current flow due to the electric-tunnel effect.
Abstract: An electrical contact resistance (ECR) theory is presented for conductive and rough (fractal) surfaces separated by a thin insulating film, which is treated as an energy barrier that impedes current flow due to the electric-tunnel effect. The analysis yields insight into the effects of film properties, current flow, surface topography, mechanical properties, and contact load on the ECR. It is shown that the variation of ECR with the contact load is less pronounced than that observed in the absence of an insulating layer due to the intrinsic voltage dependence of the tunnel resistance and the associated voltage compensation mechanism. The effect of nonohmic behavior on the relationships of the ECR with the contact load and the real contact area is discussed and results are compared with approximate analytical relationships developed herein. The relationship between the real contact area and the ECR depends on the current intensity and film properties and is independent of the surface topography and mechani...
126 citations
TL;DR: In this article, a systematic study was carried out to investigate the detailed reaction and diffusion at the interface of the nickel layer and n-type Bi2Te3-based thermoelectric material layer.
Abstract: Traditional processes of making contacts (metallization layer) onto bulk crystalline Bi2Te3-based materials do not work for nanostructured thermoelectric materials either because of weak bonding strength or an unstable contact interface at temperatures higher than 200 °C. Hot pressing of nickel contact onto nanostructured thermoelectric legs in a one-step process leads to strong bonding. However, such a process results in large contact resistance in n-type Ni/Bi2Te2.7Se0.3/Ni legs, although not in p-type Ni/Bi0.4Sb1.6Te3/Ni legs. A systematic study was carried out to investigate the detailed reaction and diffusion at the interface of the nickel layer and n-type Bi2Te3-based thermoelectric material layer. We found that a p-type region formed within the n-type Bi2Te2.7Se0.3 during hot pressing due to Te deficiency and Ni doping, leading to a large contact resistance.
126 citations
TL;DR: In this article, the authors demonstrate that Kelvin probe force microscopy (KFM) is applicable to the characterization of semiconductor devices and determine the optimum operating conditions for KFM measurements.
Abstract: This paper demonstrates that Kelvin probe force microscopy (KFM) is applicable to the characterization of semiconductor devices. The optimum operating conditions for KFM measurements are determined experimentally. Low potential deviation of less than several mV and high topographic resolution sufficient to display monolayer‐height steps were obtained at tip‐sample distances ranging from 40 to 60 nm. Potential distributions were measured on thin InGaAs resistors using KFM. The steep potential drops observed at the contact edges attributable to the contact resistance are verified by measuring the contact resistance using the transfer length method and the results of previously reported scanning tunneling potentiometry. The KFM results accurately explain the electrical properties of the metal/semiconductor interface.
126 citations
TL;DR: In this paper, the authors compared the chemical and structural properties of Ni/SiC and Ni2Si/SiCs interfaces, and showed that Ni and Si mutual diffusion in the deposited layer yielding Ni 2Si is a potential source of contact degradation at high temperature.
Abstract: We have compared the chemical and structural properties of Ni/SiC and Ni2Si/SiC interfaces. In the case of Ni/SiC, the contact formation is initiated by the dissociation of SiC, due to the strong reactivity of nickel at 950 °C. Ni2Si is formed and carbon accumulates, both at the interface and throughout the metal layer. At the interface, many Kirkendall voids are observed by TEM. Despite this poor interface morphology, low contact resistances have been measured. But the presence of carbon in the contact layer and at the interface is a potential source of contact degradation at high temperature. In the case of Ni/Si multilayers evaporated on SiC instead of pure Ni, the contact formation is preceded by Ni and Si mutual diffusion in the deposited layer yielding Ni2Si. Therefore, a smaller amount of carbon is released from SiC. Low carbon segregation, abrupt interface and low contact resistance characterize this contact. The thermal stability of Ni2Si contacts is illustrated with ageing experiments carried out at 500 °C.
125 citations