Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: In this paper, an appropriately oriented dipole layer between contact and semiconductor in organic thin-film transistors (OTFTs) is proposed to improve charge injection by interposing an appropriate oriented dipoles layer between the contact and the semiconductor.
124 citations
TL;DR: In this paper, it was shown that stable high-temperature contacts on silicon semiconductor devices can be produced by using intermetallic compounds of aluminum in combination with TiN and TaN as barrier materials instead of pure aluminum.
Abstract: While thin films of TiN and TaN are good diffusion barriers in contact structures which use nickel or gold as a top layer, they show poor barrier properties if aluminum is used as a top layer. It is shown in this letter that stable high‐temperature contacts on silicon semiconductor devices can be produced by using intermetallic compounds of aluminum in combination with TiN and TaN as barrier materials instead of pure aluminum.
123 citations
TL;DR: In this article, a review on the resistance spot welding (RSW) of Al/Al alloys, Al alloys/steel, Al/Mg alloys and Al/Ti alloys with focus on structure, properties, and performance relationships is presented.
Abstract: This paper presents a review on the resistance spot welding (RSW) of Al/Al alloys, Al alloys/steel, Al/Mg alloys, and Al/Ti alloys, with focus on structure, properties, and performance relationships. It also includes weld bonding, effect of welding parameters on joint quality, main metallurgical defects in Al spot welds, and electrode degradation. The high contact resistance, induced by the presence of oxide layer on the surface of Al alloys, and the need for application of high welding current during RSW of Al alloys result in rapid electrode tip wear and inconsistency in weld quality. Studies have shown that cleaning the oxide layer, sliding of a few microns between sheets, enhancing the electrode force, and the application of a low-current pre-heating can significantly reduce the contact resistance and improve joint quality. For Al/steel dissimilar RSW, the technique of resistance element welding, the use of optimized electrode morphology, the technique of RSW with cover plates, and the use of interlayers such as Al-Mg, AlSi12, and AlCu28 alloys were found to suppress the formation of brittle intermetallic compounds (IMC) and improve the joint quality. The employment of pure Ni foil, Au-coated Ni foil, Sn-coated steel, and Zn-coated steel interlayers was also found to restrict the formation of brittle IMCs during RSW of Al/Mg alloys. Furthermore, the techniques of RSW with cover plates and RSW under the influence of electromagnetic stirring effect were found to improve the weldability of Al/Ti dissimilar alloys.
123 citations
TL;DR: In this article, an experimental approach to derive the thermal contact resistance in terms of contact heat transfer coefficients for high temperature and high pressure conditions is based on transient infrared temperature measurements, where two bodies initially at two different temperatures are brought in contact and the surface temperature histories are recorded with a high-speed infrared camera.
123 citations
TL;DR: It is found instead that carbon dissolves from graphene into the metal at chemisorbed Ni- and Co-graphene interfaces and leads to many end-contacts being formed between the metal and the dangling carbon bonds in the graphene, which contributes to much smaller contact resistance.
Abstract: Annealing is a postprocessing treatment commonly used to improve metal–graphene contacts with the assumption that resist residues sandwiched at the metal–graphene contacts are removed during annealing. Here, we examine this assumption by undertaking a systematic study to understand mechanisms that lead to the contact enhancement brought about by annealing. Using a soft shadow-mask, we fabricated residue-free metal–graphene contacts with the same dimensions as lithographically defined metal–graphene contacts on the same graphene flake. Both cases show comparable contact enhancement for nickel–graphene contacts after annealing treatment signifying that removal of resist residues is not the main factor for contact enhancement. It is found instead that carbon dissolves from graphene into the metal at chemisorbed Ni– and Co–graphene interfaces and leads to many end-contacts being formed between the metal and the dangling carbon bonds in the graphene, which contributes to much smaller contact resistance.
123 citations