Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: In this paper, simulated cathode/interconnect structures were used to investigate the effects of different contact materials on the contact resistance between a strontium doped lanthanum ferrite cathode and a Crofer22 APU interconnect.
113 citations
TL;DR: In this paper, an n-type few-layer MoS2 field effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 µm gate length with an on-off current ratio of 107.
Abstract: For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 {\mu}m gate length with an on-off current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in on-resistance and a 3.3 times improvement in contact resistance with hetero-contacts compared to the MoS2 FETs without graphene contact layer. Temperature dependent study on MoS2/graphene hetero-contacts has been also performed, still unveiling its Schottky contact nature. Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS2/graphene /metal hetero-contacts structure.
113 citations
TL;DR: In this article, the surface performance of stainless steel bipolar plates for PEMFC has been investigated and the results show that the corrosion resistance is improved and the interfacial contact resistance (ICR) is decreased after plasma nitriding.
112 citations
TL;DR: In this article, a chloride molecular doping technique was proposed to reduce the contact resistance in the few-layer WS2 and MoS2, which greatly reduced the Schottky barrier width.
Abstract: Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron doping density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.
112 citations
TL;DR: In this paper, a simulated polymer electrolyte membrane fuel cell (PEMFC) environment was used to investigate the interfacial contact resistance (ICR) of 2205 stainless steel in a simulated PEMFC anode environment.
Abstract: Duplex 2205 stainless steel was investigated in a simulated polymer electrolyte membrane fuel cell (PEMFC) environment; stable passive films formed quickly under these conditions. The interfacial contact resistance (ICR) values for 2205 steel with the air-formed film were identical to those for 349 and lower than those for AISI446 steel. The ICR values for the passive film formed in a simulated PEMFC anode environment were lower than those for the passive film formed in the cathode environment, but both were higher than those for air-formed film. X-ray photoelectron spectroscopy analysis revealed that the passive films were mainly Cr 2 O 3 while the air-formed film was composed of Fe-oxides and Cr 2 O 3 . An estimate of the thickness of the surface films was made.
112 citations