Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: This work tackles the problem of optimizing a CNT integration process from the electrical perspective by electrically distinguishing the impact of each processing step individually on the CNT resistivity and the contact resistance.
Abstract: Carbon nanotubes (CNT) are known to be materials with potential for manufacturing sub-20 nm high aspect ratio vertical interconnects in future microchips. In order to be successful with respect to contending against established tungsten or copper based interconnects, though, CNT must fulfil their promise of also providing low electrical resistance in integrated structures using scalable integration processes fully compatible with silicon technology. Hence, carefully engineered growth and integration solutions are required before we can fully exploit their potentialities. This work tackles the problem of optimizing a CNT integration process from the electrical perspective. The technique of measuring the CNT resistance as a function of the CNT length is here extended to CNT integrated in vertical contacts. This allows extracting the linear resistivity and the contact resistance of the CNT, two parameters to our knowledge never reported separately for vertical CNT contacts and which are of utmost importance, as they respectively measure the quality of the CNT and that of their metal contacts. The technique proposed allows electrically distinguishing the impact of each processing step individually on the CNT resistivity and the CNT contact resistance. Hence it constitutes a powerful technique for optimizing the process and developing CNT contacts of superior quality. This can be of relevant technological importance not only for interconnects but also for all those applications that rely on the electrical properties of CNT grown with a catalytic chemical vapor deposition method at low temperature.
111 citations
TL;DR: In this paper, carbon nanotube (CNT) arrays were fabricated and studied experimentally using a reference calorimeter testing rig in a vacuum environment with infrared temperature measurements.
Abstract: Heat-conduction interfaces that employ carbon nanotube (CNT) arrays have been fabricated and studied experimentally using a reference calorimeter testing rig in a vacuum environment with infrared temperature measurements. Arrays of multiwalled CNTs are grown directly on silicon substrates with microwave plasma-enhanced chemical vapor deposition. Iron and nickel were used as CNT catalysts. CNT arrays grown under different synthesis conditions exhibit different pressure-contact conductance characteristics. The thermal contact resistance of CNTs with a copper interface exhibits promising results with a minimum value of 19.8mm2K/W at a pressure of 0.445MPa
111 citations
TL;DR: In this paper, the through-plane thermal conductivity of various gas diffusion layer materials and thermal contact resistance between the GDL materials and an electrolytic iron surface as a function of compression load and PTFE content at 70°C were investigated.
111 citations
TL;DR: In this article, the time-dependent variations of friction coefficient and the contact resistance of a nickel-base high-temperature alloy, N80A, during like-on-like sliding in pure oxygen at temperatures of 20 −250 °C were simultaneously recorded and the tribological behaviour correlated with the nature of the sliding contact.
111 citations
TL;DR: In this article, a self-aligned layer formed on polysilicon was found to be electrically stable up to 900°C and the junction leakage and contact resistance to increase.
Abstract: Since is perhaps the most attractive candidate for the self‐aligned silicide technology, it is important to understand the high temperature process limitations of this material. Thin films are formed on single‐crystal silicon, or polysilicon, and, when annealed in He or at temperatures of 900°C or higher, result in degradation of surface morphology and a drastic increase in sheet resistance. Eventually, isolated agglomerates are formed on the surface in case of He annealing. In the case of nitrogen annealing, they are covered with . Shallow junctions with a thin self‐aligned layer formed on top were electrically stable up to 900°C. Heat‐treatment beyond this temperature caused both the junction leakage and the contact resistance to increase. In addition to agglomeration, when thin films were formed on polysilicon, mixing of into polysilicon at temperatures beyond 850°C was observed. In the case of MOS devices, this degrades gate integrity.
110 citations