Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this paper, the effect of compression pressure on the mechanical and thermal properties of gas diffusion layers (GDL) was discussed and the thermal contact resistance between the GDL and graphite was evaluated by augmenting experiments with computer modelling.
Abstract: This paper discusses the effect of compression pressure on the mechanical and thermal properties of gas diffusion layers (GDL). The stress–strain curve of the GDL revealed one nonlinear and two piecewise linear regions within the compression pressure range of 0–5.5 MPa. The thermal conductivity of the compressed GDL seems to be independent of the compression pressure and was determined to be 1.18 ± 0.11 W m–1 K–1 at room temperature. The thermal contact resistance between the GDL and graphite was evaluated by augmenting experiments with computer modelling. The thermal contact resistance decreased nonlinearly with increasing compression pressure. According to the results here, the thermal bulk resistance of the GDL is comparable to the thermal contact resistance between the GDL and graphite. A simple one-dimensional model predicted a temperature drop of 1.7–4.4 °C across the GDL and catalyst layer depending on compression pressures.
108 citations
TL;DR: In this article, a theory for the variation of thermal contact resistance with load based on surface topography analysis is outlined, and existing theories for the so-called directional effect are critically discussed.
108 citations
TL;DR: This work demonstrates an air-stable, reconfigurable, complementary monolayer MoTe2 field-effect transistor encapsulated in hexagonal boron nitride, using electrostatically doped contacts and illustrates a complementary inverter and a p-i-n diode as potential applications.
Abstract: Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary field-effect transistors and circuits. We demonstrate an air-stable, reconfigurable, complementary monolayer MoTe2 field-effect transistor encapsulated in hexagonal boron nitride, using electrostatically doped contacts. The introduction of a multigate design with prepatterned bottom contacts allows us to independently achieve low contact resistance and threshold voltage tuning, while also decoupling the Schottky contacts and channel gating. We illustrate a complementary inverter and a p-i-n diode as potential applications.
107 citations
TL;DR: In this article, the energy loss due to electrical contact resistance (ECR) at the interface of electrodes and current-collector bars in Li-ion battery assemblies is investigated for the first time.
107 citations
TL;DR: In this paper, the effects of various combinations of bolt configuration and clamping torque on the corresponding contact pressure distributions and performances of a single PEMFC and a 10-cell stack were investigated.
107 citations