Topic
Contact resistance
About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.
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TL;DR: In this article, the interrelationship between resistivity and hardness was established for three levels of alloying of three noble metals with gold, i.e., platinum (Pt), rhodium (Rh), and ruthenium (Ru) with gold.
Abstract: This study presents a basic step toward the selection methodology of electric contact materials for microelectromechanical systems (MEMS) metal contact switches. This involves the interrelationship between two important parameters, resistivity and hardness, since they provide the guidelines and assessment of contact resistance, wear, deformation and adhesion characteristics of MEMS switches. For this purpose, thin film alloys of three noble metals, platinum (Pt), rhodium (Rh) and ruthenium (Ru) with gold (Au), were investigated. The interrelationship between resistivity and hardness was established for three levels of alloying of these metals with gold. Thin films of gold (Au), platinum (Pt), ruthenium (Rh) and rhodium (Ru) were also characterized to obtain their baseline data for comparison. All films were deposited on silicon substrates. When Ru, Rh and Pt are alloyed with Au, their hardness generally decreases but resistivity increases. This decrease or increase was, in general, dependent upon the amount of alloying.
105 citations
TL;DR: In this paper, a general transmission line equivalent-circuit model was used to exemplarily analyze the impedance of a porous high-voltage LiNi0.5Mn1.5O4 cathode.
Abstract: A key for the interpretation of porous lithium ion battery electrode impedance spectra is a meaningful and physically motivated equivalent-circuit model. In this work we present a novel approach, utilizing a general transmission line equivalent-circuit model to exemplarily analyze the impedance of a porous high-voltage LiNi0.5Mn1.5O4 (LNMO) cathode. It is based on a LNMO/graphite full-cell setup equipped with a gold wire micro-reference electrode (GWRE) to obtain impedance spectra in both, non-blocking conditions at a potential of 4.4 V cell voltage and in blocking configuration achieved at 4.9 V cell voltage. A simultaneous fitting of both spectra enables the deconvolution of physical effects to quantify over the course of 85 cycles at 40°C: a) the true charge transfer resistance (RCT), b) the pore resistance (RPore), and c) the contact resistance (RCont.). We demonstrate that the charge transfer resistance would be overestimated significantly, if the spectra are fitted with a conventionally used simplified R/Q equivalent-circuit compared to our full transmission line analysis.
105 citations
TL;DR: In this paper, the authors investigated the influence of potential steps on the transport in graphene field effect transistors and gave simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in diffusive and ballistic regimes.
Abstract: Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene field effect transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.
105 citations
TL;DR: In this paper, a nonalloyed Ti/Al metallization has been found to form an Ohmic contact that has a specific contact resistance as low as 1.0×10−5 Ω cm2.
Abstract: On Si‐implanted n‐type GaN, a nonalloyed Ti/Al metallization has been found to form an Ohmic contact that has a specific contact resistance as low as 1.0×10−5 Ω cm2. The Ohmic character is believed to be caused by the 1120 °C implant activation anneal which generates nitrogen vacancies that leave the surface heavily n type. This theory is indirectly confirmed on unimplanted n‐type GaN by comparing the rc of nonalloyed Ti/Al on unannealed GaN with that of nonalloyed Ti/Al on 1120 °C annealed GaN. The former has rectifying electrical characteristics, while the latter forms an Ohmic contact with an rc=1.3×10−3 Ω cm2.
105 citations
Patent•
17 Sep 2009TL;DR: In this article, a semiconductor p-i-n diode and method for forming the same are described, where a SiGe region is formed between a region doped to have one conductivity (either p+ or n+) and an electrical contact to the diode.
Abstract: A semiconductor p-i-n diode and method for forming the same are described herein. In one aspect, a SiGe region is formed between a region doped to have one conductivity (either p+ or n+) and an electrical contact to the p-i-n diode. The SiGe region may serve to lower the contact resistance, which may increase the forward bias current. The doped region extends below the SiGe region such that it is between the SiGe region and an intrinsic region of the diode. The p-i-n diode may be formed from silicon. The doped region below the SiGe region may serve to keep the reverse bias current from increasing as result of the added SiGe region. In one embodiment, the SiGe is formed such that the forward bias current of an up-pointing p-i-n diode in a memory array substantially matches the forward bias current of a down-pointing p-i-n diode which may achieve better switching results when these diodes are used with the R/W material in a 3D memory array.
104 citations