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Contact resistance

About: Contact resistance is a research topic. Over the lifetime, 15262 publications have been published within this topic receiving 232144 citations. The topic is also known as: electrical contact resistance & ECR.


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Journal ArticleDOI
TL;DR: This work reports on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on, and disentangle the channel properties from the contact resistance by using impedance spectroscopy and shows that the current in such devices is governed by a gate bias dependence of theContact resistance.
Abstract: Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm(2) V(-1) s(-1)), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current-voltage characterization are overestimated by one order of magnitude or more.

411 citations

Journal ArticleDOI
TL;DR: In this paper, the authors review the innovative developments of contact engineering and focus on the mechanisms behind them, and further improvement toward Ohmic contact can be expected along with the rapid advance in material research, which will also benefit other organic and electronic devices.

397 citations

Journal ArticleDOI
TL;DR: High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS1.
Abstract: High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2 . Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.

380 citations

Journal ArticleDOI
TL;DR: The experimental results presented in this work, combined with device transport modeling, reveal the remarkable potential of 2D MoS2 for future sub-10 nm technology nodes.
Abstract: Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source–drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transistors. However, no experimental study to date has approached the sub-10 nm scale due to the multiple challenges related to nanofabrication at this length scale and the high contact resistance traditionally observed in MoS2 transistors. Here, using the semiconducting-to-metallic phase transition of MoS2, we demonstrate sub-10 nm channel-length transistor fabrication by directed self-assembly patterning of mono- and trilayer MoS2. This is done in a 7.5 nm half-pitch periodic chain of transistors where semiconducting (2H) MoS2 channel regions are seamlessly connected to metallic-phase (1T′) MoS2 access and contact regions. The resulting 7.5 nm channel-length MoS2 FET has a low ...

377 citations

Journal ArticleDOI
TL;DR: The Fermi level of the junction lies much closer to the HOMO than to the LUMO, and the resistance of these junctions at low bias as a function of alkane chain length is measured.
Abstract: Using conducting probe atomic force microscopy (CP-AFM), we have formed molecular tunnel junctions consisting of alkanethiols and alkane isonitrile self-assembled monolayers sandwiched between gold, platinum, silver, and palladium contacts. We have measured the resistance of these junctions at low bias (dV/dI |V=0) as a function of alkane chain length. Extrapolation to zero chain length gives the contact resistance, R0 . R0 is strongly dependent on the type of metal used for the contacts and decreases with increasing metal work function; that is, R0,Ag > R0,Au > R0,Pd > R0,Pt. R0 is ∼10% smaller for Au junctions with isonitrile versus thiol surface linkers. We conclude that the Fermi level of the junction lies much closer to the HOMO than to the LUMO.

373 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023213
2022432
2021286
2020384
2019528
2018503