Showing papers on "Coplanar waveguide published in 2010"
TL;DR: A sensor based on a coplanar waveguide structure was designed to perform non-destructive tests for material characterization in which the measurement can be done only on one side of the sample.
Abstract: A sensor based on a coplanar waveguide structure was designed to perform non-destructive tests for material characterization in which the measurement can be done only on one side of the sample. The measurements were compared with the impedance of a capacitor filled with the same material. The permittivity and insertion loss of the sensor showed valuable information about the setting process of a mortar slab during the first 28 days of the hardening process, and a good correlation between both measurements was obtained, so the proposed setup can be useful for structural surveillance and moisture detection in civil structures.
289 citations
TL;DR: In this paper, a lightening-shaped feedline protruded from the signal line of the feeding coplanar waveguide (CPW) was used for circularly polarized square slot antenna.
Abstract: A novel design is described for a circularly polarized square slot antenna (CPSSA). Circular polarization (CP) operations can be attained using a lightening-shaped feedline protruded from the signal line of the feeding coplanar waveguide (CPW). The CP bandwidth can be significantly enhanced by implanting a pair of inverted-L grounded strips into the slot and adjusting the dimensions of the lightening-shaped feedline, whereas the impedance bandwidth can be greatly enlarged through tuning embedded vertical and horizontal stubs. The designed antenna was measured to exhibit a CP bandwidth of as high as 48.8%.
192 citations
TL;DR: In this paper, thin films of TiN were sputterdeposited onto Si and sapphire wafers with and without SiN buffer layers, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, respectively.
Abstract: Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into rf coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e., high and low electric field regimes, respectively. At high field, we found the highest internal quality factors (∼107) were measured for TiN with predominantly a (200)-TiN orientation. The (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, ≈2 nm, layer of SiN during the predeposition procedure. On these surfaces we found a significant increase of Qi for both high and low electric field regimes.
182 citations
Journal Article•
165 citations
TL;DR: In this paper, a dual-polarization coplanar waveguide (CPW)-fed slot antenna is proposed, where two orthogonal polarizations can be excited in a slot aperture by the same feeding CPW, and the -10-dB reflection coefficient bandwidths of two polarizations are 670 MHz (27.9%) for one polarization and 850 MHz (35.4%) for the other.
Abstract: A dual-polarization coplanar waveguide (CPW)-fed slot antenna is proposed in this letter. By exploiting the even and odd modes of a CPW structure, two orthogonal polarizations can be excited in a slot aperture by the same feeding CPW, which results in a compact dual-polarization antenna design with very good isolation between the ports. The -10-dB reflection coefficient bandwidths of two polarizations are 670 MHz (27.9%) for one polarization and 850 MHz (35.4%) for the other, and the isolation between the two ports in the WLAN band is better than -32.6 dB. The radiation pattern and efficiency of the proposed antenna are also measured, and radiation pattern data are compared with simulation results.
162 citations
TL;DR: In this paper, a measurement platform integrating micrometer-scale poly(dimethylsiloxane) (PDMS)-based microfluidic channels with high-frequency coplanar waveguide (CPW) transmission lines is proposed to accurately place small fluid volumes at well-defined locations within planar measurement structures.
Abstract: We describe the design, fabrication, and evaluation of a new on-wafer measurement platform for the rapid and quantitative determination of the complex permittivity of nanoliter fluid volumes over the continuous frequency range from 45 MHz to 40 GHz. Our measurement platform integrates micrometer-scale poly(dimethylsiloxane) (PDMS)-based microfluidic channels with high-frequency coplanar waveguide (CPW) transmission lines to accurately place small fluid volumes at well-defined locations within planar measurement structures. We applied new on-wafer calibration techniques to accurately determine the scattering parameters of our integrated devices, and we developed a transmission-line model to extract the distributed circuit parameters of the fluid-loaded transmission line segment from the response of the overall test structure. All the necessary model parameters were experimentally determined directly from a single set of measurements without requiring a reference fluid of known permittivity. We extracted the complex permittivity of the fluid under test from the distributed capacitance and conductance per unit length of the fluid-loaded transmission line segment using finite-element analysis of the transmission line cross section. Our measurements show excellent agreement with bulk fluid permittivity determinations for methanol at room temperature and yield consistent results for the extracted fluid permittivity for the same microfluidic channel embedded in multiple CPW transmission lines of different dimensions.
161 citations
TL;DR: The observation of photon generation in a microwave cavity with a time-dependent boundary condition with multiple stable states is reported, considered a preliminary step towards demonstrating the dynamical Casimir effect.
Abstract: We report the observation of photon generation in a microwave cavity with a time-dependent boundary condition. Our system is a microfabricated quarter-wave coplanar waveguide cavity. The electrical length of the cavity is varied by using the tunable inductance of a superconducting quantum interference device. It is measured at a temperature significantly less than the resonance frequency. When the length is modulated at approximately twice the static resonance frequency, spontaneous parametric oscillations of the cavity field are observed. Time-resolved measurements of the dynamical state of the cavity show multiple stable states. The behavior is well described by theory. Our results may be considered a preliminary step towards demonstrating the dynamical Casimir effect.
159 citations
TL;DR: In this paper, two printed wide-slot antennas with E-shaped patches and slots, for broadband applications, are proposed They are fed by a coplanar waveguide (CPW) and a microstrip line with almost the same performances.
Abstract: Two printed wide-slot antennas with E-shaped patches and slots, for broadband applications, are proposed They are fed by a coplanar waveguide (CPW) and a microstrip line with almost the same performances Detailed simulation and experimental investigations are conducted to understand their behaviors and optimize for broadband operation Good agreement between the measurement and simulation has been achieved The impedance bandwidths, determined by 10-dB reflection coefficient, of the proposed slot antennas fed by microstrip line and CPW, from both measurement and simulation, are about 136% (285 to 1512 GHz) and 146% (283 to 182 GHz), respectively This large operating bandwidth is obtained by choosing suitable combinations of feed and slot shapes In order to achieve wider operation bandwidth both of the designed antennas have round corners on the wide slot and patch Meanwhile, the proposed antennas exhibit almost omnidirectional radiation patterns, relatively high gain, and low cross polarization A comprehensive numerical sensitivity analysis has been done to understand the effects of various dimensional parameters and to optimize the performance of the designed antennas Results for reflection coefficient, far-field E and H-plane radiation patterns, and gain of the designed antennas are presented and discussed
146 citations
TL;DR: In this paper, a compact coplanar waveguide-fed patch antenna designed by simply embedding two types of shaped slots into a rectangular patch for achieving dual-band operation is presented.
Abstract: A compact coplanar waveguide (CPW)-fed patch antenna designed by simply embedding two types of shaped slots into a rectangular patch for achieving dual-band operation is presented. The use of embedded slots can effectively excite multiresonant modes together with good dual-impedance bandwidths, especially ultrawide for the upper bandwidth. By fabricating and measuring the prototype of the proposed optimal antenna, dual operating bands with 10-dB return-loss bandwidths of about 230 MHz centered at 2.42 GHz and of about 73% ranging from 4.8 to 9.62 GHz covering the required bandwidths of 2.4/5.2/5.8 GHz WLAN standards and the C-band satellite communication were obtained. Also, a stable monopole-like radiation pattern and an average antenna gain of 1.4 and 5.1 dBi, respectively, across the dual operating bands have been measured.
132 citations
TL;DR: In this article, a coplanar waveguide (CPW)-fed dual-wideband antenna formed by a triangular monopole and a U-shaped monopole is presented, which can generate two wide bands centered at about 2.5 GHz and 5 GHz.
Abstract: A coplanar waveguide (CPW)-fed dual-wideband antenna formed by a triangular monopole and a U-shaped monopole is presented. The antenna can generate two wide bands centered at about 2.5 GHz and 5 GHz to cover all the 2.4/5.2/5.8 GHz WLAN bands and the 2.5/3.5/5.5 WiMAX bands. Furthermore, the antenna has a simple planar structure and occupies a small size of about 28 X 33 mm2, including the finite ground CPW feeding mechanism. Good dipole-like radiation characteristics over the operating bands are obtained.
101 citations
TL;DR: In this article, the authors proposed a dual-band on-chip rectifying antenna (rectenna) at 35 and 94 GHz for wireless power transmission, which is designed in slotline (SL) and finite-width ground coplanar waveguide (FGCPW) transmission lines in a CMOS 0.13μm process.
Abstract: This paper proposes a high-efficiency dual-band on-chip rectifying antenna (rectenna) at 35 and 94 GHz for wireless power transmission. The rectenna is designed in slotline (SL) and finite-width ground coplanar waveguide (FGCPW) transmission lines in a CMOS 0.13-μm process. The rectenna comprises a high gain linear tapered slot antenna (LTSA), an FGCPW to SL transition, a bandpass filter, and a full-wave rectifier. The LTSA achieves a VSWR=2 fractional bandwidth of 82% and 41%, and a gain of 7.4 and 6.5 dBi at the frequencies of 35 and 94 GHz. The measured power conversion efficiencies are 53% and 37% in free space at 35 and 94 GHz, while the incident radiation power density is 30 mW/cm2 . The fabricated rectenna occupies a compact size of 2.9 mm2.
Book•
26 Jul 2010
TL;DR: In this article, the authors introduce the concept of microwave waveguides, and present a model of a microwave waveguide based on the Fourier transform and a waveguide with two-port networks.
Abstract: About the Authors. Preface. 1 Introduction. 1.1 Microwaves and radio frequencies. 1.2 Frequency bands. 1.3 Applications. Bibliography. 2 Basic electromagnetic theory. 2.1 Introduction. 2.2 Maxwell's equations. 2.3 Time-harmonic EM fields polarization of a vector. 2.4 Maxwell's equations in the harmonic regime. 2.5 Boundary conditions. 2.6 Energy and power of the EM field Poynting's theorem. 2.7 Some fundamental theorems. 2.8 Plane waves. 2.9 Solution of the wave equation in rectangularcoordinates. 2.10 Reflection and transmission of plane waves Snel'slaws. 2.11 Electrodynamic potentials. Bibliography. 3 Guided EM propagation. 3.1 Introduction. 3.2 Cylindrical structures solution of Maxwell sequations as TE, TM and TEM modes. 3.3 Modes of propagation as transmission lines. 3.4 Transmission lines as 1-D circuits. 3.5 Phase velocity, group velocity and energy velocity. 3.6 Properties of the transverse modal vectors et, ht fieldexpansion in a waveguide. 3.7 Loss, attenuation and power handling in real waveguides. 3.8 The rectangular waveguide. 3.9 The ridge waveguide. 3.10 The circular waveguide. 3.11 The coaxial cable. 3.12 The parallel-plate waveguide. 3.13 The stripline. 3.14 The microstrip line. 3.15 The coplanar waveguide. 3.16 Coupled lines. Bibliography. 4 Microwave circuits. 4.1 Introduction. 4.2 Microwave circuit formulation. 4.3 Terminated transmission lines. 4.4 The Smith chart. 4.5 Power flow. 4.6 Matrix representations. 4.7 Circuit model of a transmission line section. 4.8 Shifting the reference planes. 4.9 Loaded two-port network. 4.10 Matrix description of coupled lines. 4.11 Matching of coupled lines. 4.12 Two-port networks using coupled-line sections. Bibliography. 5 Resonators and cavities. 5.1 Introduction. 5.2 The resonant condition. 5.3 Quality factor or Q. 5.4 Transmission line resonators. 5.5 Planar resonators. 5.6 Cavity resonators. 5.7 Computation of the Q factor of a cavity resonator. 5.8 Dielectric resonators. 5.9 Expansion of EM fields. Bibliography. 6 Impedance matching. 6.1 Introduction. 6.2 Fano's bound. 6.3 Quarter-wavelength transformer. 6.4 Multi-section quarter-wavelength transformers. 6.5 Line and stub transformers stub tuners. 6.6 Lumped L networks. 7 Passive microwave components. 7.1 Introduction. 7.2 Matched loads. 7.3 Movable short circuit. 7.4 Attenuators. 7.5 Fixed phase shifters. 7.6 Junctions and interconnections. 7.7 Dividers and combiners. 7.8 Lumped element realizations. 7.9 Multi-beam forming networks. 7.10 Non-reciprocal components. Bibliography. 8 Microwave filters. 8.1 Introduction. 8.2 Definitions. 8.3 Lowdpass prototype. 8.4 Semi-lumped lowdpass filters. 8.5 Frequency transformations. 8.6 Kuroda identities. 8.7 Immittance inverters. Bibliography. 9 Basic concepts for microwave component design. 9.1 Introduction. 9.2 Cascaded linear two-port networks.9 9.3 Signal flow graphs. 9.4 Noise in two-port networks. 9.5 Nonlinear two-port networks. 9.6 Semiconductors devices. 9.7 Electrical models of high-frequency semiconductordevices. Bibliography. 10 Microwave control components. 10.1 Introduction. 10.2 Switches. 10.3 Variable attenuators. 10.4 Phase shifters. Bibliography. 11 Amplifiers. 11.1 Introduction. 11.2 Small-signal amplifiers. 11.3 Low-noise amplifiers. 11.4 Design of trial amplifier. 11.5 Power amplifiers. 11.6 Other amplifier configurations. 11.7 Some examples of microwave amplifiers. Bibliography. 12 Oscillators. 12.1 Introduction. 12.2 General principles. 12.3 Negative resistance oscillators. 12.4 Positive feedback oscillators. 12.5 Standard oscillator configuration. 12.6 Design of a trial oscillator. 12.7 Oscillator specifications. 12.8 Special oscillators. 12.9 Design of a push-push microwave VCO. Bibliography. 13 Frequency converters. 13.1 Introduction. 13.2 Detectors. 13.3 Mixers. 13.4 Frequency multipliers. Bibliography. 14 Microwave circuit technology. 14.1 Introduction. 14.2 Hybrid and monolithic integrated circuits. 14.3 Basic MMIC elements. 14.4 Simulation models and layout libraries. 14.5 MMIC production technique. 14.6 RFIC. 15 RF and microwave architectures. 15.1 Introduction. 15.2 Review of modulation theory. 15.3 Transmitters. 15.4 Receivers. 15.5 Further concepts on RF transmitters and receivers. 15.6 Special radio functional blocks. 16 Numerical methods and CAD. 16.1 Introduction. 16.2 EM analysis. 16.3 Circuit analysis. 16.4 Optimization. 17 Measurement instrumentation and techniques. 17.1 Introduction. 17.2 Power meters. 17.3 Frequency meters. 17.4 Spectrum analyzers. 17.5 Wide-band sampling oscilloscopes. 17.6 Network analyzers. 17.7 Special test instruments. Appendix A Useful relations from vector analysis andtrigonometric function identities. Appendix B Fourier transform. Appendix C Orthogonality of the eigenvectors in idealwaveguides. Appendix D Standard rectangular waveguides and coaxialcables. Appendix E Symbols for electric diagrams. Appendix F List of acronyms. Index.
TL;DR: A scheme for a spin quantum bit based on a double quantum dot contacted to ferromagnetic elements and a switchable strong coupling to a superconducting coplanar waveguide cavity is theoretically proposed.
Abstract: We theoretically propose a scheme for a spin quantum bit based on a double quantum dot contacted to ferromagnetic elements. Interface exchange effects enable an all electric manipulation of the spin and a switchable strong coupling to a superconducting coplanar waveguide cavity. Our setup does not rely on any specific band structure and can in principle be realized with many different types of nanoconductors. This allows us to envision on-chip single spin manipulation and readout using cavity QED techniques.
TL;DR: In this article, the authors demonstrate that a graphene monolayer, over which three metallic electrodes forming a coplanar waveguide are patterned, acts as a frequency multiplier and generates frequencies at least up to 40 GHz.
Abstract: In this letter, we demonstrate that a graphene monolayer, over which three metallic electrodes forming a coplanar waveguide are patterned, acts as a frequency multiplier and generates frequencies at least up to 40 GHz. These results show that monolayer graphene is a natural frequency multiplier.
TL;DR: In this article, the authors studied the loss rate for a set of λ/2 coplanar waveguide resonators at millikelvin temperatures (20 −900 mK) and different applied powers (3⋅10−19 −10−12
Abstract: We study the loss rate for a set of λ/2 coplanar waveguide resonators at millikelvin temperatures (20–900 mK) and different applied powers (3⋅10−19–10−12 W). The loss rate becomes power independent below a critical power. For a fixed power, the loss rate increases significantly with decreasing temperature. We show that this behavior can be caused by two-level systems in the surrounding dielectric materials. Interestingly, the influence of the two-level systems is of the same order of magnitude for the different material combinations. That leads to the assumption that the nature of these two-level systems is material independent.
TL;DR: In this paper, a sub-millimeter wave solid-state power amplifier (SSPA) is implemented in coplanar waveguide (CPW) and uses an advanced high fMAX InP HEMT transistor with a sub 50-nm gate.
Abstract: In this paper, we demonstrate a packaged sub-millimeter wave solid-state power amplifier (SSPA). The SSPA is implemented in coplanar waveguide (CPW) and uses an advanced high fMAX InP HEMT transistor with a sub 50-nm gate. A monolithically integrated CPW dipole-to-waveguide transition eliminates the need for wirebonding and additional substrates. On-chip compact tandem couplers are used for power combining. The amplifier demonstrates 15-dB small-signal gain at 340 GHz. Peak saturated output power of 10 mW at 338 GHz is obtained at the waveguide flange out-put for the SSPA module.
TL;DR: In this article, the authors used clouds of ultracold atoms as sensitive, tunable, and non-invasive probes for microwave field imaging with micrometer spatial resolution, and used the method to determine the microwave near field distribution around a coplanar waveguide integrated on an atom chip.
Abstract: We report a technique that uses clouds of ultracold atoms as sensitive, tunable, and non-invasive probes for microwave field imaging with micrometer spatial resolution. The microwave magnetic field components drive Rabi oscillations on atomic hyperfine transitions whose frequency can be tuned with a static magnetic field. Readout is accomplished using state-selective absorption imaging. Quantitative data extraction is simple and it is possible to reconstruct the distribution of microwave magnetic field amplitudes and phases. While we demonstrate 2d imaging, an extension to 3d imaging is straightforward. We use the method to determine the microwave near-field distribution around a coplanar waveguide integrated on an atom chip.
TL;DR: In this article, a millimeter-wave 35 GHz bandpass filter using coplanar waveguide structure is fabricated in a 0.18-m standard complimentary metal oxide semiconductor process.
Abstract: A novel millimeter-wave 35-GHz bandpass filter using coplanar waveguide structure is fabricated in a 0.18-?m standard complimentary metal oxide semiconductor process. The conductor-backed half-wavelength resonators are utilized to realize stopband characteristics at desired frequencies. A series LC resonant circuit can generate one transmission zero located at 58 GHz. It is also observed that the parasitic effect can create another transmission zero at 80 GHz. Furthermore, the transmission zero at 66 GHz is designed with the use of a shorter conductor-backed resonator. The selectivity of the proposed filter is much improved. Without including the dummy metal, the chip size of the proposed filter is 0.225 × 0.55 mm2. The good agreement between simulation and measurement is obtained.
TL;DR: In this article, a reduction of 7 dB was achieved by removing the exposed dielectric substrate surface from the region with high electric fields and by using NbTiN, which is additive to decreasing the noise by widening the resonators.
Abstract: We report a reduction in the frequency noise in coplanar waveguide superconducting resonators. The reduction of 7 dB is achieved by removing the exposed dielectric substrate surface from the region with high electric fields and by using NbTiN. In a model-analysis the surface of NbTiN is found to be a negligible source of noise, experimentally supported by a comparison with NbTiN on SiOx resonators. The reduction is additive to decreasing the noise by widening the resonators.
TL;DR: In this article, the authors used clouds of ultracold atoms as sensitive, tunable, and noninvasive probes for microwave field imaging with micrometer spatial resolution using state-selective absorption imaging.
Abstract: We report a technique that uses clouds of ultracold atoms as sensitive, tunable, and noninvasive probes for microwave field imaging with micrometer spatial resolution. The microwave magnetic field components drive Rabi oscillations on atomic hyperfine transitions whose frequency can be tuned with a static magnetic field. Readout is accomplished using state-selective absorption imaging. Quantitative data extraction is simple and it is possible to reconstruct the distribution of microwave magnetic field amplitudes and phases. While we demonstrate two-dimensional imaging, an extension to three-dimensional imaging is straightforward. We use the method to determine the microwave near-field distribution around a coplanar waveguide integrated on an atom chip.
TL;DR: In this article, a cross-coupled substrate-integrated evanescent-mode waveguide filter with a quasi-elliptic frequency response is proposed with a coplanar waveguide as a nonresonating node to provide an equivalent negative coupling coefficient.
Abstract: A cross-coupled substrate-integrated evanescent-mode waveguide filter is proposed with a quasi-elliptic frequency response. It is realized with a coplanar waveguide as a nonresonating node to provide an equivalent negative coupling coefficient. The filter prototype is developed with folded and ridge substrate-integrated waveguides (SIWs) in low-temperature co-fired ceramic. Since evanescent-mode and cross-coupling techniques are used in the design of filters, about 90% area reduction and more than 60% volume reduction are achieved, in comparison with conventional planar cavity-coupled SIW filters. Their unloaded Q factor is also improved. In particular, the spurious suppression characteristic of the direct-coupled evanescent-mode waveguide filter is kept by the cross-coupled filter with the nonresonating node structure. All these merits are demonstrated numerically, as well as experimentally, with good agreement obtained between the measured and simulated S-parameters.
TL;DR: In this paper, a coplanar waveguide (CPW) antenna for dual-band WLAN applications is proposed, which consists of a rectangular patch, a rectangular notch cut at the lower edge of the patch and a CPW transmission line.
Abstract: A novel coplanar waveguide (CPW) antenna is proposed for dual-band WLAN applications. It comprises a rectangular patch, a rectangular notch cut at the lower edge of the patch and a CPW transmission line. The rectangular patch together with the ground plane of the coplanar waveguide radiates at the lower frequency band, 2.4 GHz for IEEE 802.11b/g, while the rectangular notch resonates in the upper band, 5.2/5.8 GHz for IEEE 802.11a. The designed antenna is only 32 × 5 mm, which can provide stable omnidirectional radiation patterns with an average gain of 2 dBi in both the bands. The antenna is very compact and suitable for 2.4 and 5.2/5.8 GHz WLAN operations.
04 Nov 2010
TL;DR: In this paper, two oscillators and a high power amplifier were designed with a grounded coplanar waveguide and 0.12-μm GaN HEMT technology for millimeter-wave transceivers.
Abstract: This paper presents two oscillators (OSCs) and a high power amplifier (PA) for millimeter-wave transceivers. The circuits were designed with a grounded coplanar waveguide (GCPW) and 0.12-μm GaN HEMT technology. One OSC, which was based on a simple series source feedback topology, oscillated at a frequency of 74.5 GHz with an output power of 2.2 mW (3.38 dBm). This oscillation frequency was the highest ever reported for GaN HEMT OSCs. Another OSC with a buffer delivered a record power of 85 mW (19.28 dBm) at 70.75 GHz. In addition, a single-chip PA with a 3-stage common source scheme delivered an output power of 1.3 W (31.13 dBm) at 75 GHz with a CW source module. The 3-dB bandwidth of the PA was 13 GHz from 67 to 80 GHz. The performance of these devices is sufficient for use in E-band fixed wireless access systems and automotive radar systems. The results demonstrate that the GaN HEMTs represent a feasible means of addressing the stringent demands imposed by various millimeter-wave applications.
04 Nov 2010
TL;DR: In this paper, the authors demonstrate that the cascode amplifier topology can be extended to operating frequencies > 500 GHz using coplanar waveguide on a 1-Mil thick InP substrate and use a monolithically integrated electromagnetic transition for coupling energy from the chip to the waveguide package.
Abstract: In this paper, we demonstrate that the cascode amplifier topology can be extended to operating frequencies > 500 GHz. Two packaged cascode amplifiers are reported, including a broadband 3 stage amplifier with ~17 dB gain and 8.3 dB packaged noise figure at 300 GHz and a narrowband amplifier with 10 dB gain at 0.55 THz measured in package. Both of these amplifiers use 30 nm InP HEMT transistors, are realized in coplanar waveguide on a 1-Mil thick InP substrate and use a monolithically integrated electromagnetic transition for coupling energy from the chip to the waveguide package.
TL;DR: In this article, high aspect ratio (12.5) through silicon vias made in a silicon interposer have been electrically characterized in the direct current (dc) and microwave regimes for 3D interconnect applications.
Abstract: High-aspect ratio (12.5) through silicon vias (TSV) made in a silicon interposer have been electrically characterized in the direct current (dc) and microwave regimes for 3D interconnect applications. The vias were micro-machined in silicon, insulated, and filled with copper employing a bottom-up copper electroplating technique in a “via-first” approach. DC via resistance measurements show good agreement with the theoretical expected value (~ 16 mΩ) . Radio-frequency (RF) measurements up to 50 GHz have been performed on coplanar waveguides located on the back-side of the wafers and connected to the front-side with TSVs. The S-parameters indicate clearly the beneficial impact of double sided ground planes of the RF signals. The via resistance extracted from impedance measurements is in good agreement with dc values, while the inductance (53 pH) and capacitance (2.4 pF) of the TSV are much lower than conventional wire bonding, which makes the use of TSV very promising for 3D integration. An advanced analytical model is proposed for the interconnect system with vias and lines and shows very good agreement with the experimental data with a limited number of fitting parameters. This work gives a proof of concept for high aspect ratio TSV manufacturing and new insights to improve 3D interconnect modeling for systems-in-package applications in the microwave regime.
TL;DR: In this paper, a broadband waveguide-to-substrate integrated waveguide transition is proposed, where a fin line probe is inserted into a rectangular metal waveguide to achieve a broadband transition between the rectangular waveguide and substrate integrated waveguides.
Abstract: A novel broadband waveguide-to-substrate integrated waveguide transition is presented. The transition is realised by using a fin line probe inserted into a rectangular metal waveguide. A single back-to-back transition covering the KA band is designed, fabricated and tested. Measured results show that good agreement with simulation, an insertion loss less than 1.4 dB and a return loss better than 15 dB at 25 40 GHz are obtained for a back-to-back structure. This broadband transition between the rectangular waveguide and substrate integrated waveguide can be used widely in microwave and millimetre-wave circuits and systems.
TL;DR: In this paper, a hexagonal ferrite thin film-based planar millimeter-wave phase shifter was demonstrated, which made use of an M-type barium ferrite (BaM) thin film prepared by pulsed laser deposition.
Abstract: A hexagonal ferrite thin film-based planar millimeter-wave phase shifter was demonstrated. The device made use of an M-type barium ferrite (BaM) thin film prepared by pulsed laser deposition and a coplanar waveguide geometry. The phase tuning relied on ferromagnetic resonance in the BaM film. The device showed a phase tuning rate of 43°/(mm kOe) and an insertion loss of 3.1 dB/mm in the on-resonance regime. In off-resonance regimes, the device showed smaller loss and smaller tuning rates. The experimental results were confirmed by theoretical calculations.
TL;DR: In this paper, a planar slow-wave structure consisting of a straight-edge connection was studied in the context of application in traveling-wave tubes, and the effects of several practical modifications to the basic structure were examined.
Abstract: A planar slow-wave structure consisting of a planar helix with straight-edge connections has been studied in the context of application in traveling-wave tubes. The effects of several practical modifications to the basic structure are examined. These modifications comprise a vacuum tunnel, metal shield, and multilayer dielectric substrates. A modified effective dielectric constant method is proposed to obtain the dispersion characteristics for different possible configurations. Furthermore, coupling impedance for the different configurations has been calculated using the corresponding 2-D approximations. It is shown that, far from cutoff, the phase velocity and coupling impedance values calculated in this manner match very well with the simulation results obtained from CST Microwave Studio. The effects of variations in aspect ratio, metal shield distance, and dielectric constant of the substrates on phase velocity and coupling impedance are studied. A coplanar waveguide feed has been designed for one of the possible configurations. The measured S-parameters and phase velocity values for this proof-of-concept configuration agree well with the simulated results and confirm the ease of fabrication, low loss, and the wideband potential of the planar helix with straight-edge connections.
23 May 2010
TL;DR: In this paper, a 220 GHz solid-state power amplifier (SSPA) module is presented, which is implemented in coplanar waveguide (CPW) technology and uses sub 50 nm InP HEMT transistors.
Abstract: In this paper, a 220 GHz solid-state power amplifier (SSPA) module is presented. Eight-way on-chip power combining is used to achieve a saturated output power ≥ 50 mW over a 217.5 to 220 GHz bandwidth, representing a significant increase in SSPA output power at this frequency compared to prior state of the art. The amplifier MMIC is implemented in coplanar waveguide (CPW) technology and uses sub 50 nm InP HEMT transistors. Two levels of power combining, a 2∶1 tandem coupler and a 4∶1 Dolph-Chebychev transformer, are realized in CPW. The module demonstrates ≥ 11.5 dB small signal gain from 207 to 230 GHz. Saturated output power ≥ 40 mW was measured from 216 to 222.5 GHz.
TL;DR: In this paper, the authors investigated measurement crosstalk in a system with two flux-biased phase qubits coupled by a resonant coplanar waveguide cavity and found that the maximum energy transferred by the cros stalk generating qubit roughly saturates for long energy relaxation times.
Abstract: We investigate measurement crosstalk in a system with two flux-biased phase qubits coupled by a resonant coplanar waveguide cavity. After qubit measurement, the superconducting phase undergoes damped oscillations in a deep anharmonic potential producing a frequency chirped voltage or crosstalk signal. We show experimentally that a coplanar waveguide cavity acts as a bandpass filter that can significantly reduce the propagation of this crosstalk signal when the qubits are far off resonance from the cavity. The transmission of the crosstalk signal $\ensuremath{\propto}{({\ensuremath{\omega}}_{q}{C}_{x})}^{2}$ can be further minimized by reducing the qubit frequencies and the coupling capacitance to the cavity. We model the large amplitude crosstalk signal and qubit response classically with results that agree well with the experimental data. We find that the maximum energy transferred by the crosstalk generating qubit roughly saturates for long energy relaxation times $({T}_{1}g100\text{ }\text{ns})$ while the delay time necessary for the crosstalk signal to propagate to the cavity scales linearly with ${T}_{1}$. Ultimately, the use of resonant cavities as coupling elements and crosstalk filters is extremely beneficial for future architectures incorporating many coupled qubits.