Topic
Crystal oven
About: Crystal oven is a research topic. Over the lifetime, 955 publications have been published within this topic receiving 10380 citations. The topic is also known as: oven-controlled crystal oscillator & OCXO.
Papers published on a yearly basis
Papers
More filters
•
12 Jun 1975
TL;DR: In this article, the base reference frequency of a crystal-controlled reference oscillator is pulled in frequency by changing the capacitance shunting the crystal and two transistor switches change appropriate capacitors in series with the usual oscillator capacitor.
Abstract: To provide the required multiple channels for an aircraft communications system, a crystal controlled reference oscillator includes a tunable circuit for changing the base reference frequency provided by a crystal. The base reference frequency of the crystal controlled reference oscillator is pulled in frequency by changing the capacitance shunting the crystal. Two transistor switches change appropriate capacitors in series with the usual oscillator capacitor to obtain the capacitance values needed to pull the base reference frequency and thereby provide additional reference frequencies. The transistor switches are controlled by pilot actuated controls that operate a sliding display mark over a digital frequency indicator.
7 citations
•
08 Apr 2008
TL;DR: In this article, a third overtone crystal oscillator has an oscillator IC and a crystal element accommodated in a container, and a spiral inductor forming a parallel resonant circuit together with the first capacitor is provided at the container, using a printing process.
Abstract: A third overtone crystal oscillator has an oscillator IC and a crystal element accommodated in a container. The IC includes transistor grounded at its emitter, a first capacitor connected to the base of the transistor via a DC blocking capacitor and to the ground potential, and a second capacitor connected between the collector of the transistor and the ground potential. Both ends of the crystal element are connected to non-grounded ends of the first and second capacitors, respectively. A spiral inductor forming a parallel resonant circuit together with the first capacitor, is provided at the container, using a printing process, for example, being independent of the IC. The parallel resonant frequency of the parallel resonant circuit is set higher than the oscillation frequency at the fundamental wave of the crystal element, and lower than the oscillation frequency at the third overtone of the crystal element.
7 citations
••
29 May 1991
TL;DR: In this article, a temperature internally compensated crystal oscillator using the novel GT-cut quartz crystal resonator formed by an etching method is described, and it is theoretically predicted and experimentally shown that R/sub d/ and r/sub qs/ influence the oscillation frequency and the frequency-temperature behavior.
Abstract: The authors describe a temperature internally compensated crystal oscillator using the novel GT-cut quartz crystal resonator formed by an etching method. The object is to clarify if drain output resistance R/sub d/ and resistance R/sub qs/ connected in series to the resonator in elements constructing a CMOS oscillator circuit which suppress spurious vibrations, influence oscillation frequency and frequency-temperature behavior. First, a CMOS quartz crystal oscillator circuit is transformed into an equivalent circuit, and an equation which gives oscillation frequencies is derived from Kirchhoff's law. Second, since the equation is given as a function of R/sub d/ and R/sub qs/, it is theoretically predicted and experimentally shown that R/sub d/ and R/sub qs/ influence the oscillation frequency and the frequency-temperature behavior. >
7 citations
••
01 Oct 1985
TL;DR: In this article, a new method of electronic tuning, i.e., frequency modulation of dielectric resonator oscillators, is presented. But this method is based on perturbing the field above the dielectral resonator.
Abstract: This paper presents a new method of electronic tuning, i.e. frequency modulation of dielectric resonator oscillators. The method is based on perturbing the field above the dielectric resonator. A preliminary model showed a frequency shift of more than 40MHz at approximately 16GHz, with a keying rate higher than 20Mb/s. Application of analog frequency modulations is also possible.
7 citations