About: Crystallite is a research topic. Over the lifetime, 43231 publications have been published within this topic receiving 981094 citations.
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01 Jan 1956
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Abstract: 1. Properties of X-rays. 2. Geometry of Crystals. 3. Diffraction I: Directions of Diffracted Beams. 4. Diffraction II: Intensities of Diffracted Beams. 5. Diffraction III: Non-Ideal Samples. 6. Laure Photographs. 7. Powder Photographs. 8. Diffractometer and Spectrometer. 9. Orientation and Quality of Single Crystals. 10. Structure of Polycrystalline Aggregates. 11. Determination of Crystal Structure. 12. Precise Parameter Measurements. 13. Phase-Diagram Determination. 14. Order-Disorder Transformation. 15. Chemical Analysis of X-ray Diffraction. 16. Chemical Analysis by X-ray Spectrometry. 17. Measurements of Residual Stress. 18. Polymers. 19. Small Angle Scatters. 20. Transmission Electron Microscope.
TL;DR: Raman spectra are reported from single crystals of graphite and other graphite materials as mentioned in this paper, and the Raman intensity of this band is inversely proportional to the crystallite size and is caused by a breakdown of the k-selection rule.
Abstract: Raman spectra are reported from single crystals of graphite and other graphite materials. Single crystals of graphite show one single line at 1575 cm−1. For the other materials like stress‐annealed pyrolitic graphite, commercial graphites, activated charcoal, lampblack, and vitreous carbon another line is detected at 1355 cm−1. The Raman intensity of this band is inversely proportional to the crystallite size and is caused by a breakdown of the k‐selection rule. The intensity of this band allows an estimate of the crystallite size in the surface layer of any carbon sample. Two in‐plane force constants are calculated from the frequencies.
TL;DR: In this paper, a simple route to the production of high-quality CdE (E=S, Se, Te) semiconductor nanocrystallites is presented, based on pyrolysis of organometallic reagents by injection into a hot coordinating solvent.
Abstract: A simple route to the production of high-quality CdE (E=S, Se, Te) semiconductor nanocrystallites is presented. Crystallites from ∼12 A to ∼115 A in diameter with consistent crystal structure, surface derivatization, and a high degree of monodispersity are prepared in a single reaction. The synthesis is based on the pyrolysis of organometallic reagents by injection into a hot coordinating solvent. This provides temporally discrete nucleation and permits controlled growth of macroscopic quantities of nanocrystallites. Size selective precipitation of crystallites from Portions of the growth solution isolates samples with narrow size distributions (<5% rms in diameter). High sample quality results in sharp absorption features and strong «band-edge» emission which is tunable with particle size and choice of material
01 Jan 1954
TL;DR: The mechanical properties of nanocrystalline materials are reviewed in this paper, with emphasis on their constitutive response and on the fundamental physical mechanisms, including the deviation from the Hall-Petch slope and possible negative slope, the effect of porosity, the difference between tensile and compressive strength, the limited ductility, the tendency for shear localization, fatigue and creep responses.
Abstract: The mechanical properties of nanocrystalline materials are reviewed, with emphasis on their constitutive response and on the fundamental physical mechanisms. In a brief introduction, the most important synthesis methods are presented. A number of aspects of mechanical behavior are discussed, including the deviation from the Hall–Petch slope and possible negative slope, the effect of porosity, the difference between tensile and compressive strength, the limited ductility, the tendency for shear localization, the fatigue and creep responses. The strain-rate sensitivity of FCC metals is increased due to the decrease in activation volume in the nanocrystalline regime; for BCC metals this trend is not observed, since the activation volume is already low in the conventional polycrystalline regime. In fatigue, it seems that the S–N curves show improvement due to the increase in strength, whereas the da/dN curve shows increased growth velocity (possibly due to the smoother fracture requiring less energy to propagate). The creep results are conflicting: while some results indicate a decreased creep resistance consistent with the small grain size, other experimental results show that the creep resistance is not negatively affected. Several mechanisms that quantitatively predict the strength of nanocrystalline metals in terms of basic defects (dislocations, stacking faults, etc.) are discussed: break-up of dislocation pile-ups, core-and-mantle, grain-boundary sliding, grain-boundary dislocation emission and annihilation, grain coalescence, and gradient approach. Although this classification is broad, it incorporates the major mechanisms proposed to this date. The increased tendency for twinning, a direct consequence of the increased separation between partial dislocations, is discussed. The fracture of nanocrystalline metals consists of a mixture of ductile dimples and shear regions; the dimple size, while much smaller than that of conventional polycrystalline metals, is several times larger than the grain size. The shear regions are a direct consequence of the increased tendency of the nanocrystalline metals to undergo shear localization. The major computational approaches to the modeling of the mechanical processes in nanocrystalline metals are reviewed with emphasis on molecular dynamics simulations, which are revealing the emission of partial dislocations at grain boundaries and their annihilation after crossing them.
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