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Debye model
About: Debye model is a research topic. Over the lifetime, 7462 publications have been published within this topic receiving 133987 citations.
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TL;DR: In this article, the authors introduced the hypothesis of simultaneous interaction between incident helium atoms of thermal kinetic energy and surface atoms belonging to a surface unit cell, and the exponent of the Debye-Waller factor contains mean square and mean correlated displacement between atoms of the cell.
82 citations
TL;DR: Thermal transport in silicon nanowires has captured the attention of scientists for understanding phonon transport at the nanoscale, and the thermoelectric figure-of-merit (ZT) reported in rough nanowire has inspired engineers to develop cost-effective waste heat recovery systems.
Abstract: Thermal transport in silicon nanowires has captured the attention of scientists for understanding phonon transport at the nanoscale, and the thermoelectric figure-of-merit (ZT) reported in rough nanowires has inspired engineers to develop cost-effective waste heat recovery systems Thermoelectric generators composed of silicon target high-temperature applications due to improved efficiency beyond 550 K However, there have been no studies of thermal transport in silicon nanowires beyond room temperature High-temperature measurements also enable studies of unanswered questions regarding the impact of surface boundaries and varying mode contributions as the highest vibrational modes are activated (Debye temperature of silicon is 645 K) Here, we develop a technique to investigate thermal transport in nanowires up to 700 K Our thermal conductivity measurements on smooth silicon nanowires show the classical diameter dependence from 40 to 120 nm In conjunction with Boltzmann transport equation, we also prob
81 citations
TL;DR: In this paper, a matrix-inversion method was used to calculate the intensities of normally incident low-energy electrons diffracted from GaAs(110) and compared with measured intensities.
Abstract: Dynamical calculations of the intensities of normally incident low-energy electrons diffracted from GaAs(110), performed using a matrix-inversion method, are compared both with earlier kinematical calculations and with measured intensities. The insensitivity of the calculated intensities to the choice of exchange potential and vacuum-solid boundary conditions is displayed. Surface lattice vibrations are found to be adequately described by the bulk Debye temperature. We consider second- and third-layer structural distortions as well as top-layer reconstructions. This analysis leads to the selection of the most probable surface structure for GaAs(110) as one in which the top layer undergoes both a rigid rotation of 27.4\ifmmode^\circ\else\textdegree\fi{} and a 0.05-\AA{} contraction with the As atoms moving outward and the Ga atoms inward, giving a relative vertical shear of 0.65 \AA{}. In the second layer the Ga moves outward 0.06 \AA{} and the second-layer As moves inward 0.06 \AA{}. The dynamical analysis reported herein shows no evidence for third-layer distortions.
81 citations
TL;DR: In this paper, the structural, elastic, electronic and thermal properties of Ni3Nb were investigated by first-principles calculations, and the results were agreed well with the available experimental data.
81 citations