Deep reactive-ion etching

About: Deep reactive-ion etching is a research topic. Over the lifetime, 2113 publications have been published within this topic receiving 35932 citations.

A fully integrated monolithic microchip electrospray device for mass spectrometry

Abstract: A novel microfabricated nozzle has been developed for the electrospray of liquids from microfluidic devices for analysis by mass spectrometry. The electrospray device was fabricated from a monolithic silicon substrate using deep reactive ion etching and other standard semiconductor techniques to etch nozzles from the planar surface of a silicon wafer. A channel extends through the wafer from the tip of the nozzle to a reservoir etched into the opposite planar surface of the wafer. Nozzle diameters as small as 15 μm have been fabricated using this method. The microfabricated electrospray device provides a reproducible, controllable, and robust means of producing nanoelectrospray of a liquid sample. The electrospray device was interfaced to an atmospheric pressure ionization time-of-flight mass spectrometer using continuous infusion of test compounds at low nanoliter-per-minute flow rates. Nozzle-to-nozzle signal intensity reproducibility using 10 nozzles was demonstrated to be 12% with single-nozzle signal...

Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)

Abstract: The ability to predict and control the influence of process parameters during silicon etching is vital for the success of most MEMS devices. In the case of deep reactive ion etching (DRIE) of silicon substrates, experimental results indicate that etch performance as well as surface morphology and post-etch mechanical behavior have a strong dependence on processing parameters. In order to understand the influence of these parameters, a set of experiments was designed and performed to fully characterize the sensitivity of surface morphology and mechanical behavior of silicon samples produced with different DRIE operating conditions. The designed experiment involved a matrix of 55 silicon wafers with radius hub flexure (RHF) specimens which were etched 10 min under varying DRIE processing conditions. Data collected by interferometry, atomic force microscopy (AFM), profilometry, and scanning electron microscopy (SEM), was used to determine the response of etching performance to operating conditions. The data collected for fracture strength was analyzed and modeled by finite element computation. The data was then fitted to response surfaces to model the dependence of response variables on dry processing conditions.

Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures

Abstract: This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF/sub 6//O/sub 2/-based high-density plasmas at cryogenic temperatures. Procedures of how to tune the equipment for optimal results with respect to etch rate and profile control are described. Profile control is a delicate balance between the respective etching and deposition rates of a SiO/sub x/F/sub y/ passivation layer on the sidewalls and bottom of an etched structure in relation to the silicon removal rate from unpassivated areas. Any parameter that affects the relative rates of these processes has an effect on profile control. The deposition of the SiO/sub x/F/sub y/ layer is mainly determined by the oxygen content in the SF/sub 6/ gas flow and the electrode temperature. Removal of the SiO/sub x/F/sub y/ layer is mainly determined by the kinetic energy (self-bias) of ions in the SF/sub 6//O/sub 2/ plasma. Diagrams for profile control are given as a function of parameter settings, employing the previously published "black silicon method". Parameter settings for high rate silicon bulk etching, and the etching of micro needles and micro moulds are discussed, which demonstrate the usefulness of the diagrams for optimal design of etched features. Furthermore, it is demonstrated that in order to use the oxygen flow as a control parameter for cryogenic DRIE, it is necessary to avoid or at least restrict the presence of fused silica as a dome material, because this material may release oxygen due to corrosion during operation of the plasma source. When inert dome materials like alumina are used, etching recipes can be defined for a broad variety of microstructures in the cryogenic temperature regime. Recipes with relatively low oxygen content (1-10% of the total gas volume) and ions with low kinetic energy can now be applied to observe a low lateral etch rate beneath the mask, and a high selectivity (more than 500) of silicon etching with respect to polymers and oxide mask materials is obtained. Crystallographic preference etching of silicon is observed at low wafer temperature (-120/spl deg/C). This effect is enhanced by increasing the process pressure above 10 mtorr or for low ion energies (below 20 eV).

Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

Abstract: An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication ...... Enjoy reading . Henri Jansen 18 June 2008

Silicon fusion bonding and deep reactive ion etching: a new technology for microstructures

Abstract: New developments in deep reactive ion etching (DRIE) technology, when combined with silicon fusion bonding (SFB), make it possible, for the first time, to span nearly the entire range of microstructure thicknesses between surface and bulk micromachining, using only single-crystal silicon. The combination of these two powerful micromachining tools forms a versatile new technology for the fabrication of micromechanical devices. The two techniques are described and a process technology is presented. Some of the experimental structures and devices that have been demonstrated using this new process technology are discussed.