Showing papers on "Depletion region published in 2019"

High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region.

Abstract: Van der Waals (vdW) heterodiodes based on two-dimensional (2D) materials have shown tremendous potential in photovoltaic detectors and solar cells. However, such 2D photovoltaic devices are limited by low quantum efficiencies due to the severe interface recombination and the inefficient contacts. Here, we report an efficient MoS2/AsP vdW hetero-photodiode utilizing a unilateral depletion region band design and a narrow bandgap AsP as an effective carrier selective contact. The unilateral depletion region is verified via both the Fermi level and the infrared response measurements. The device demonstrates a pronounced photovoltaic behavior with a short-circuit current of 1.3 μA and a large open-circuit voltage of 0.61 V under visible light illumination. Especially, a high external quantum efficiency of 71%, a record high power conversion efficiency of 9% and a fast response time of 9 μs are achieved. Our work suggests an effective scheme to design high-performance photovoltaic devices assembled by 2D materials. Photovoltaic devices based on 2D materials still suffer from low quantum efficiencies due to interfacial charge recombination and inefficient contacts. Here, the authors design photovoltaic detectors and photodiodes based on MoS2 and doped AsP heterojunction with unilateral depletion region reporting high external quantum efficiency of 71% under zero applied bias.

Graphene-semiconductor heterojunction sheds light on emerging photovoltaics

Abstract: Electronic coupling of graphene atop a bulk semiconductor and the resultant interfacial energy-band reorganization create a light-sensitive junction only one atom below the front surface. Uniquely, this architecture leads to the surface being in extremely close proximity to the depletion region (typically buried several micrometres under the surface for a conventional wafer-based p–n junction solar cell), thus providing direct access to the photosensitive junction, which can be modified by surface functionalization and/or incorporation of plasmonic nanoparticles. The surface-based heterojunction, tunable carrier transport and relatively enhanced optical absorption in such 2D-layer-interfaced 3D semiconductor systems will have a transformative impact in the field of 2D optoelectronics, photovoltaics, photonics and nanoelectronics. Graphene-on-bulk semiconductors may enable new directions for ultrathin optoelectronics and photovoltaics.

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

Abstract: In this paper, we carried out a systematic investigation on gate degradation and the physical mechanism of the Schottky-type ${p}$ -GaN gate HEMTs under positive gate voltage stress. The frequency- and temperature-dependent measurements have been conducted. It is found that the time-dependent gate degradation exhibits weak relevance with frequencies ranging from 10 to 100 kHz under dynamic gate stress and is similar to that in static gate stress. Both the gate breakdown voltage (BV) and mean-time-to-failure (MTTF) show positive temperature dependence. Moreover, the current–voltage ( I–V ) characteristics and threshold voltage ( ${V}_{\text {TH}}$ ) instability of ${p}$ -GaN devices before/after gate degradation are compared and analyzed. The degraded Schottky junction exhibits an ohmic-like gate behavior. It is revealed that under a large gate bias stress, high-energy electrons accelerated in the depletion region of the ${p}$ -GaN layer would promote the formation of defect levels near the metal/ ${p}$ -GaN interface, leading to the initial ${p}$ -GaN layer degradation. The subsequent high gate leakage density could cause the final degradation of the AlGaN barrier.

Thinning ferroelectric films for high-efficiency photovoltaics based on the Schottky barrier effect

Abstract: Achieving high power conversion efficiencies (PCEs) in ferroelectric photovoltaics (PVs) is a longstanding challenge. Although recently ferroelectric thick films, composite films, and bulk crystals have all been demonstrated to exhibit PCEs >1%, these systems still suffer from severe recombination because of the fundamentally low conductivities of ferroelectrics. Further improvement of PCEs may therefore rely on thickness reduction if the reduced recombination could overcompensate for the loss in light absorption. Here, a PCE of up to 2.49% (under 365-nm ultraviolet illumination) was demonstrated in a 12-nm Pb(Zr0.2Ti0.8)O3 (PZT) ultrathin film. The strategy to realize such a high PCE consists of reducing the film thickness to be comparable with the depletion width, which can simultaneously suppress recombination and lower the series resistance. The basis of our strategy lies in the fact that the PV effect originates from the interfacial Schottky barriers, which is revealed by measuring and modeling the thickness-dependent PV characteristics. In addition, the Schottky barrier parameters (particularly the depletion width) are evaluated by investigating the thickness-dependent ferroelectric, dielectric and conduction properties. Our study therefore provides an effective strategy to obtain high-efficiency ferroelectric PVs and demonstrates the great potential of ferroelectrics for use in ultrathin-film PV devices. An approach to boost the power conversion efficiencies (PCEs) of ferroelectric photovoltaics (PVs) is proposed based on the Schottky barrier effect. This approach leverages the thinning of a ferroelectric film to somewhere close to the depletion width, which can simultaneously suppress the recombination and lower the series resistance. Using this approach, we achieve a PCE up to 2.49% (under 365-nm ultraviolet illumination) in the 12-nm Pb(Zr0.2Ti0.8)O3 ultrathin films. Our study provides insightful guidance on how to design and tailor the ferroelectric films to achieve high PCEs, and also demonstrates the great potential of ferroelectrics for use in ultrathin-film PV devices. Eliminating stray electrical effects in ultra-thin films can help optimize an unconventional solar energy technology. Ferroelectric materials have internal dipoles that spontaneously move photogenerated charges toward external circuits, producing higher power outputs than predicted by theory. Zhen Fan from South China Normal University in Guangzhou and colleagues now report that the dimensions of ferroelectric thin films distinctly affect how efficiently they convert sunlight into electricity. Measurements of solar cells containing lead-zirconium-titanate ferroelectrics with different thicknesses revealed a jump in conversion efficiencies when the film reached a thickness of 12 nanometers. Further analysis showed that this thickness correlates with the solar cell’s ‘depletion width’, a zone formed when metal electrodes contact the film. The electric field in the depletion zone complements the pushing actions of the ferroelectric dipoles, lowering electrical losses compared to thicker ferroelectric films.

Analysis of Recombination Mechanisms in RbF-Treated CIGS Solar Cells

Abstract: In this paper, we studied the effect of rubidium fluoride (RbF) post-deposition treatment (PDT) on the properties of Cu(In,Ga)Se2 (CIGS) solar cells. Specifically, the recombination mechanisms were analyzed by a series of characterizations including thermal and optical defect spectroscopies, temperature dependent current density–voltage measurements, and time resolved photoluminescence. It was found that the main effect of RbF PDT on the solar cell was an increase of the open circuit-voltage, $V_{{\text{oc}}}$ , by 30 mV due to a decrease of the values of the diode quality factor and reverse saturation current. Recombination mechanisms were identified as being in the CIGS space charge region, likely at the grain boundaries and near the CIGS surface. Breakdown of contributions to the $V_{{\text{oc}}}$ increase showed that part of it is due to an increase of the majority carrier concentration (16 mV) and another to the increase in the minority carrier lifetime (1 mV). The latest is mostly due to a reduction in the EV+0.99 eV deep-level trap density. An additional CIGS surface modification (contributing 13 mV), observed by the secondary ion mass spectrometry, is essential to explain the full change in $V_{{\text{oc}}}$ .

Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

Abstract: The surface electronic properties of bulk-grown β-Ga2O3 (2¯01) single crystals are investigated. The band gap is found using optical transmission to be 4.68 eV. High-resolution x-ray photoemission coupled with hybrid density functional theory calculation of the valence band density of states provides insights into the surface band bending. Importantly, the standard linear extrapolation method for determining the surface valence band maximum (VBM) binding energy is found to underestimate the separation from the Fermi level by ∼0.5 eV. According to our interpretation, most reports of surface electron depletion and upward band bending based on photoemission spectroscopy actually provide evidence of surface electron accumulation. For uncleaned surfaces, the surface VBM to Fermi level separation is found to be 4.95 ± 0.10 eV, corresponding to downward band bending of ∼0.24 eV and an electron accumulation layer with a sheet density of ∼5 × 1012 cm−2. Uncleaned surfaces possess hydrogen termination which acts as surface donors, creating electron accumulation and downward band bending at the surface. In situ cleaning by thermal annealing removes H from the surface, resulting in a ∼0.5 eV shift of the surface VBM and formation of a surface electron depletion layer with upward band bending of ∼0.26 eV due to native acceptor surface states. These results are discussed in the context of the charge neutrality level, calculated bulk interstitial hydrogen transition levels, and related previous experimental findings.

Operation of BaSi2 homojunction solar cells on p+-Si(111) substrates and the effect of structure parameters on their performance

Abstract: Operation of n+-BaSi2/p-BaSi2(500 nm)/p+-BaSi2 homojunction solar cells on p+-Si(111) is demonstrated, showing a saturation current density of 9.4 mA cm−2 and an open-circuit voltage of 0.11 V under AM1.5 illumination. Photogenerated electrons deep in the p-BaSi2 light absorber layer are likely to be transferred to the p+-Si side, leading to negative values of internal quantum efficiency (IQE) at longer wavelengths. The negative IQE can be solved by extending the width of depletion region in the p-BaSi2 light absorber layer by decreasing its hole concentration. The importance of Si substrate surface morphology is also discussed.

High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K

Abstract: This work presents the temperature-dependent forward conduction and reverse blocking characteristics of a high-voltage vertical Ga2O3 power rectifier from 300 K to 600 K. Vertical β-Ga2O3 Schottky barrier diodes (SBDs) were fabricated with a bevel-field-plated edge termination, where a beveled sidewall was implemented in both the mesa and the field plate oxide. The Schottky barrier height was found to increase from 1.2 eV to 1.3 eV as the temperature increases from 300 K to 600 K, indicating the existence of barrier height inhomogeneity. The net donor concentration in the drift region shows little dependence on the temperature. The reverse leakage current up to 500 V was found to be limited by both the thermionic-field electron injection at the Schottky contact and the electron hopping via the defect states in the depletion region. At 300–500 K, the leakage is first limited by the electron injection at low voltages and then by the hopping in depleted Ga2O3 at high voltages. At temperatures above 500 K, the thermionic field emission limits the device leakage over the entire voltage range up to 500 V. Compared to the state-of-the-art SiC and GaN SBDs when blocking a similar voltage, our vertical Ga2O3 SBDs are capable of operating at significantly higher temperatures and show a smaller leakage current increase with temperature. This shows the great potential of Ga2O3 SBDs for high-temperature and high-voltage power applications.

Si-MoS2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power.

Abstract: In this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS2. Mechanically exfoliated MoS2 flakes are transferred onto a Si layer; the resulting Si–MoS2 p–n photodiode shows excellent performance with a responsivity (R) and detectivity (D*) of 76.1 A/W and 1012 Jones, respectively. In addition, the effect of the thickness of the depletion layer of the Si–MoS2 heterojunction on performance is investigated using the depletion layer model; based on the obtained results, we optimize the photoresponse of the device by varying the MoS2 thickness. Furthermore, low-frequency noise measurement is performed for the fabricated devices. The optimized device shows a low noise equivalent power (NEP) of 7.82 × 10–15 W Hz–1/2. Therefore, our proposed device could be utilized for various optoelectronic devices for low-light detection.

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFET s Under Repetitive Avalanche Shocks

Abstract: In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors under repetitive avalanche shocks are investigated in details. With the help of Silvaco TCAD simulations, gate capacitance versus gate voltage ( Cg – Vg ) measurement, and three-terminal charge pumping test, the main damaged position is demonstrated to be the SiC/SiO2 interface along junction FET (JFET) region instead of the body diode where most of the avalanche current passes through. Dominant avalanche degradation mechanism is then confirmed to be the injection of holes into the gate oxide above the JFET region. Since the channel region and the main junction of body diode are not seriously damaged by the avalanche stress, static parameters all remain stable. Meanwhile, due to the injection of holes, the depletion layer beneath the JFET region gets thinner, resulting in the increase of gate-drain capacitance ( C gd) under low drain-source voltage ( V ds) bias condition. It further takes responsibilities for the increments in input capacitance ( Ciss ), output capacitance ( Coss ), and reverse transfer capacitance ( Crss ). Moreover, it results in the extension of Miller plateau. Therefore, the increase of gate charge and delay of turn- off time after being stressed by repetitive avalanche shocks are monitored. Moreover, turn- on and turn- off dissipated energies after different unclamped-inductive-switching stress cycles are extracted. They are rarely influenced by the stress for the overlapping areas of voltage and current during switching procedures are relatively stable.

Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

Abstract: In this letter, we present an analysis of the threshold voltage shift induced by positive bias temperature instability stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal/p-GaN junction. In particular, we show the positive effect of the magnesium compensation process in the p-GaN layer on the long-term threshold voltage instability. When a relatively high positive bias is applied to the gate (Schottky junction reverse-biased), holes are generated by impact ionization in the high-field depleted p-GaN region, then accelerated toward the AlGaN layer. The high-energy holes, combined with the high temperature effects, create defects in the AlGaN or at its interface with p-GaN, causing a long-term positive threshold voltage shift. A process variation in the p-GaN layer is introduced which promotes a wider depletion region near the Schottky interface with the metal, lowering the electric field and reducing the generation of holes due to impact ionization. As a result, the long-term threshold voltage instability is improved without altering the dc transistor parameters, such as threshold voltage, trans-conductance, and subthreshold slope.

Utilization of Temperature-Sweeping Capacitive Techniques to Evaluate Band Gap Defect Densities in Photovoltaic Perovskites.

Abstract: Capacitive techniques, routinely used for solar cell parameter extraction, probe the voltage-modulation of the depletion layer capacitance isothermally as well as under varying temperature. In addition, defect states within the semiconductor band gap respond to such stimuli. Although extensively used, capacitive methods have found difficulties when applied to elucidating bulk defect bands in photovoltaic perovskites. This is because perovskite solar cells (PSCs) actually exhibit some intriguing capacitive features hardly connected to electronic defect dynamics. The commonly reported excess capacitance observed at low frequencies is originated by outer interface mechanisms and has a direct repercussion on the evaluation of band gap defect levels. Starting by updating previous observations on Mott-Schottky analysis in PSCs, it is discussed how the thermal admittance spectroscopy and the deep level transient spectroscopy characterization techniques present spectra with overlapping or even "fake" peaks caused by the mobile ion-related, interfacial excess capacitance. These capacitive techniques, when used uncritically, may be misleading and produce wrong outcomes.

Preparation and electronic properties of clean superconducting Nb(110) surfaces

Abstract: We have studied cleaning procedures of Nb(110) by verifying the surface quality with low-energy electron diffraction, Auger electron spectroscopy, and scanning tunneling microscopy and spectroscopy. Our results show that the formation of a surface-near impurity depletion zone is inhibited by the very high diffusivity of oxygen in the Nb host crystal which kicks in at annealing temperatures as low as a few hundred degree Celsius. Oxygen can be removed from the surface by heating the crystal up to $T=2400{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$. Tunneling spectra measured on the clean Nb(110) surface exhibit a sharp conductance peak in the occupied states at an energy of about $\ensuremath{-}450$ meV. Density functional theory calculations show that this peak is caused by a ${d}_{{z}^{2}}$ surface resonance band at the $\overline{\mathrm{\ensuremath{\Gamma}}}$ point of the Brillouin zone which provides a large density of states above the sample surface. The clean Nb(110) surface is superconducting with a gap width and a critical magnetic field strength in good agreement to the bulk value. In an external magnetic field we observe the Abrikosov lattice of flux quanta (vortices). Spatially resolved spectra show a zero-bias anomaly in the vortex core.

Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra

Abstract: The effects of hydrogen plasma treatment of β-Ga2O3 grown by halide vapor phase epitaxy and doped with Si are reported. Samples subjected to H plasma exposure at 330 °C developed a wide (∼2.5 μm-thick) region near the surface, depleted of electrons at room temperature. The thickness of the layer is in reasonable agreement with the estimated hydrogen penetration depth in β-Ga2O3 based on previous deuterium profiling experiments. Admittance spectroscopy and photoinduced current transient spectroscopy measurements place the Fermi level pinning position in the H treated film near Ec-1.05 eV. Annealing at 450 °C decreased the thickness of the depletion layer to 1.3 μm at room temperature and moved the Fermi level pinning position to Ec-0.8 eV. Further annealing at 550 °C almost restored the starting shallow donor concentration and the spectra of deep traps dominated by Ec-0.8 eV and Ec-1.05 eV observed before hydrogen treatment. It is suggested that hydrogen plasma exposure produces surface damage in the near-surface region and passivates or compensates shallow donors.The effects of hydrogen plasma treatment of β-Ga2O3 grown by halide vapor phase epitaxy and doped with Si are reported. Samples subjected to H plasma exposure at 330 °C developed a wide (∼2.5 μm-thick) region near the surface, depleted of electrons at room temperature. The thickness of the layer is in reasonable agreement with the estimated hydrogen penetration depth in β-Ga2O3 based on previous deuterium profiling experiments. Admittance spectroscopy and photoinduced current transient spectroscopy measurements place the Fermi level pinning position in the H treated film near Ec-1.05 eV. Annealing at 450 °C decreased the thickness of the depletion layer to 1.3 μm at room temperature and moved the Fermi level pinning position to Ec-0.8 eV. Further annealing at 550 °C almost restored the starting shallow donor concentration and the spectra of deep traps dominated by Ec-0.8 eV and Ec-1.05 eV observed before hydrogen treatment. It is suggested that hydrogen plasma exposure produces surface damage in the near-...

Investigations on the Degradations of Double-Trench SiC Power MOSFETs Under Repetitive Avalanche Stress

Abstract: The degradations of electrical parameters for double-trench silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) under repetitive avalanche stress are investigated in this paper. The injection of hot holes into the bottom oxide of the gate trench during avalanche process is demonstrated to be the dominant degradation mechanism, while the channel is rarely influenced by the stress. The injected holes attract extra electrons in the SiC layer along the SiC/SiO2 interface, decreasing the ON-state drain–source resistance ( ${R}_{{dson}}$ ). Due to this reason, the threshold voltage ( ${V}_{{th}}$ ) of the device also reduces slightly. Moreover, other than static electrical parameters, dynamic characteristics including the gate–drain capacitance ( ${C}_{{gd}}$ ) and the switching characteristics of the device also degrade. After being stressed by repetitive avalanche stress, the depletion region beneath the bottom of the gate trench gets thinner, leading to the increase in ${C}_{{gd}}$ , which further influences the switching behaviors. The turn- ON and turn- OFF switching times of the device are calculated. It illustrates that the repetitive avalanche stress results in an obvious delay in the turn- OFF procedure, but hardly influences the turn- ON behaviors of the double-trench SiC MOSFET.

Direct Observation of a Li‐Ionic Space‐Charge Layer Formed at an Electrode/Solid‐Electrolyte Interface

Abstract: When two different materials come into contact, mobile carriers redistribute at the interface according to their potential difference. Such a charge redistribution is also expected at the interface between electrodes and solid electrolytes. The redistributed ions significantly affect the ion conduction through the interface. Thus, it is essential to determine the actual distribution of the ionic carriers and their potential to improve ion conduction. We succeeded in visualizing the ionic and potential profiles in the charge redistribution layer, or space-charge layer (SCL), formed at the interface between a Cu electrode and Li-conductive solid electrolyte using phase-shifting electron holography and spatially resolved electron energy-loss spectroscopy. These electron microscopy techniques clearly showed the Li-ionic SCL, which dropped by 1.3 V within a distance of 10 nm from the interface. These techniques could contribute to the development of next-generation electrochemical devices.

Competition between Depletion Effects and Coupling in the Plasmon Modulation of Doped Metal Oxide Nanocrystals.

Abstract: Degenerately doped semiconductor nanocrystals (NCs) exhibit strong light–matter interactions due to localized surface plasmon resonance (LSPR) in the near- to mid-infrared region. Besides being readily tuned through dopant concentration introduced during synthesis, this LSPR can also be dynamically modulated by applying an external electrochemical potential. This characteristic makes these materials candidates for electrochromic window applications. Here, using prototypical doped indium oxide NCs as a model system, we find that the extent of electrochemical modulation of LSPR frequency is governed by the depletion width and the extent of inter-NC LSPR coupling, which are indirectly controlled by the dopant density, size, and packing density of the NCs. The depletion layer is a near-surface region with a sharply reduced free carrier population that occurs whenever the surface potential lies below the Fermi level. Changes in the depletion width under applied bias substantially control the spectral modulatio...

Design of Transistors Using High-Permittivity Materials

Abstract: The design and modeling of dielectric superjunction transistors using combinations of ultrahigh permittivity materials and high-mobility materials are described. We show that placing high dielectric permittivity materials in the gate–drain depletion region can reduce electric field variations by screening the field due to depleted charges. This enables simultaneously high sheet charge density and breakdown voltage for scaled field-effect transistors. Using detailed 2-D device simulation of dc and high frequency characteristics, we show that extreme dielectric constant engineering provides unique opportunities for transistor design and has the potential to perform better than state-of-the-art millimeter-wave and terahertz frequency transistors.

Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors

Abstract: The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing antiambipolar effect in their transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2–heterostructure–WSe2. Our work vividly demonstrates the microscopic origin ...

Response modeling of single SnO2 nanowire gas sensors

Abstract: The response of single SnO2 nanowire gas sensors with different diameters between 20 and 140 nm are evaluated by calculating the nanowire conductivity as a function of the surface charge density. The procedure involves the numerical solution of the Poisson-Boltzmann equation for the electrostatic potential in cylindrical geometry in order to model the depletion region and band bending at the SnO2 nanowire surface. In the model we take into account varying surface charge densities σ and bulk electron concentrations n0 to calculate the electrical conductivity. Considering the fact that the surface charge density depends on the nanowire surface interactions with ambient gas, the model allows us to simulate the sensor response when the nanowire is employed as gas sensing component. We report a saturation in depletion length λ versus surface charge density σ which is the principal reason for limiting the sensor responses. The results also show that the conductivity is decreasing by increasing surface charge density, the smaller the nanowire diameter the steeper the decrease. As a result the nanowire response is proportional to 1/d where d is the nanowire diameter. Furthermore, we argue about the validity of the modeling results and their relevance to experimental findings on SnO2 nanowire based gas sensors reported in literature.

Surface Depletion Layers in Plasmonic Metal Oxide Nanocrystals

Abstract: Strong infrared (IR) light-matter interaction and spectral tunability combine to make plasmonic metal oxide nanocrystals (NCs) a compelling choice for IR applications. In particular, visible transparency paired with strong, dynamically tunable IR absorption has motivated their implementation in electrochromic smart windows, but these NCs hold promise for a far broader range of plasmonically driven processes such as surface-enhanced infrared sensing, photothermal therapy, and enhanced photocatalysis. These unique properties result from localized surface plasmon resonance (LSPR) sustained by a relatively low free charge carrier concentration, which in turn requires consideration of distinct materials physics relative to traditional plasmonic materials (i.e., metals). Particularly important is the formation of insulating shells devoid of charge carriers (depletion layers) near the NC surface. Surface states as well as applied surface potentials can give rise to a potential difference between the NC surface and its core that depletes free charge carriers from the surface, forming an insulating shell that reduces the conductivity in NC films, lowers the dielectric sensitivity of the LSPR, and diminishes the incident electric field enhancement. In this Account, we report recent investigations of depletion layers in plasmonic metal oxide NCs that have advanced understanding of the semiconductor physics underlying the optoelectronic properties of these NCs and the electrochemical modulation of their LSPR, establishing a conceptual framework with which to broaden their applicability and optimize their performance. As a result of surface depletion, larger, highly doped NCs have improved dielectric sensitivity compared with their smaller, lightly doped counterparts. Concentrating dopants near the NC surface compresses the depletion layer, resulting in improved conductivity of NC films. Moreover, atomic layer deposition of alumina to infill NC films enhances the film conductivity by more than 2 orders of magnitude, ascribed to the elimination of depletion effects by reactive removal of surface water species. At the conclusion, we reflect on how our newfound understanding of surface depletion in plasmonic metal oxide NCs is quickly leading to rational material design. This insight is already resulting in significant performance improvements, and the same principles can be applied to new, exciting opportunities in hot carrier extraction and resonant IR energy transduction.

Novel Tunnel-Contact-Controlled IGZO Thin-Film Transistors with High Tolerance to Geometrical Variability

Abstract: For the first time, thin insulating layers are used to modulate a depletion region at the source of a thin-film transistor. Bottom contact, staggered electrode transistors fabricated using RFsputtered IGZO as the channel layer, with a 3 nm ALD Al2O3 layer between the semiconductor and Ni source-drain contacts show behaviours typical of source-gated transistors (SGTs): low saturation voltage (VD_SAT ~ 3V), change in VD_SAT with gate voltage of only 0.12 V/V and flat saturated output characteristics (small dependence of drain current on drain voltage). The transistors show high tolerance to geometry variations: saturated current changes only 0.15x for channel lengths between 2 - 50 μm, and only 2x for sourcegate overlaps between 9 - 45 μm. A higher than expected (5x) increase in drain current for a 30K change in temperature, similar to Schottky-contact SGTs, underlines a more complex device operation than previously theorised. Optimizations for increasing intrinsic gain and reducing temperature effects are discussed. These devices complete the portfolio of contactcontrolled transistors, comprising devices with: Schottky contacts, bulk barrier or heterojunctions, and now, tunnelling insulating layers. The findings should also apply to nanowire transistors, leading to new low-power, robust design approaches as large-scale fabrication techniques with sub-nanometre control mature.

Electrically Tunable Metal–Semiconductor–Metal Terahertz Metasurface Modulators

Abstract: We propose metal–semiconductor–metal cavity arrays as active elements of electrically tunable metasurfaces operating in the terahertz spectrum. Their function is based on reverse biasing the Schottky junction formed between top metal strips and the n-type semiconductor buried beneath. A gate bias between the strips and a back metal reflector controls the electron depletion layer thickness thus tuning the Drude permittivity of the cavity array. Using a rigorous multiphysics framework which combines Maxwell equations for terahertz waves and the drift-diffusion model for describing the carrier behavior in the semiconductor, we find a theoretically infinite extinction ratio, insertion loss of around 10%, and picosecond intrinsic switching times at 1 THz, for a structure designed to enter the critical coupling regime once the depletion layer reaches the bottom metal contact. We also show that the proposed modulation concept can be used for devices operating at the higher end of the terahertz spectrum, discussing the limitations on their performance.

The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors

Abstract: In this research, PVA (doped with 7% Zn) was sandwiched between Al and p-Si as a polymer interfacial layer. Voltage and frequency effect on the real and imaginary components of complex dielectric constant (e′ and e″), electric modulus (M′ and M″), loss tangent (tan δ) and electrical conductivity (σ) of the MPS-type capacitor has been studied. Impedance spectroscopy method was used between 5 and 5000 kHz at room temperature. Almost all frequency-related parameters were found as quite susceptible, especially in the accumulation and depletion regions. These changes in real and imaginary components of dielectric properties in depletion region were attributed to the interface layer and dipole polarization, the existence of surface states (Nss) and their relaxation time (τ), especially at low frequencies. But these changes in the accumulation region were attributed to the existence of interfacial layer and series resistance (Rs) of the capacitor owing to the voltage divided between them and capacitor. As a result, frequency, applied biases, interfacial polymer layer, polarization processes, Nss and Rs of the capacitor are more effective on the values of e′, e″, tan δ, M′, M″ and σ. Therefore, the effects of them must be considered in determining the dielectric parameters, electric modulus, conductivity and conduction mechanisms in the capacitors with and without an interfacial layer such as insulator/oxide, polymer, ferroelectric materials.

Effect of Bias on the Response of GaN Axial p-n Junction Single-Nanowire Photodetectors.

Abstract: We present a comprehensive study of the performance of GaN single-nanowire photodetectors containing an axial p-n junction. The electrical contact to the p region of the diode is made by including a p + /n + tunnel junction as cap structure, which allows the use of the same metal scheme to contact both ends of the nanowire. Single-nanowire devices present the rectifying current-voltage characteristic of a p-n diode, but their photovoltaic response to ultraviolet radiation scales sublinearly with the incident optical power. This behavior is attributed to the dominant role of surface states. Nevertheless, when the junction is reverse biased, the role of the surface becomes negligible in comparison to the drift of photogenerated carriers in the depletion region. Therefore, the responsivity increases by about three orders of magnitude and the photocurrent scales linearly with the excitation. These reverse-biased nanowires display decay times in the range of » 10 µs, limited by the resistance ´ capacitance time constant of the setup. Their ultraviolet/visible contrast of several orders of magnitude is suitable for applications requiring high spectral selectivity. When the junction is forward biased, the device behaves as a GaN photoconductor, with an increase of the responsivity at the price of a degradation of the time response. The presence of leakage current in some of the wires can 2 be modeled as a shunt resistance which reacts to the radiation as a photoconductor and can dominate the response of the wire even under reverse bias.