Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.

2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO 2 /HfO 2 Stacked Gate-Oxide Structure

Abstract: A continuous 2-D analytical drain current model of double-gate (DG) heterojunction tunnel field-effect transistors (HJTFETs) with a SiO2/HfO2 stacked gate-oxide structures has been presented in this paper. The surface potential model has been developed by considering the effect of accumulation/inversion charges and depletion region at source/channel and drain/channel junctions. The electric field-dependent band-to-band tunneling generation rate has been derived from the surface potential model. The tangent line approximation method has been used to calculate the drain current of DG HJTFETs. The developed model is valid for all regions (subthreshold to strong accumulation/inversion region) of operation. The model has been developed for Si/Ge hetero and Si homojunction-based tunnel field-effect transistor devices. The model is also applicable for other structures such as III–V materials-based InAs/GaSb DG HJTFET and silicon-on-insulator-based HJTFET. The analytical model results are validated by 2-D ATLAS simulation data.

Photocurrent enhancement of SnO2 nanowires through Au-nanoparticles decoration.

Abstract: It is found that the sensitivity of photoresponse of SnO2 nanowires can be enhanced by metallic particles decoration. The underlying mechanism is attributed to the formation of the Schottky junction on nanowires surface in the vicinity of metallic nanoparticles. The increment in the barrier height and width of space charge region due to the existence of Schottky junction increases the surface electric field and enhances the spatial separation effect, which then prolongs the lifetime of photoinduced electron and consequently increases the photoresponse gain. The result shown here provides an alternative route for enhancing the photoresponse of semiconductor nanostructures, which should be useful for creating highly sensitive photodetectors.

Method for fabricating bipolar junction and MOS transistors on SOI

Abstract: An SOI wafer (10) is separated into a bipolar junction transistor area (18) and an MOS transistor area (19). A bipolar junction transistor having a collector region (25), and emitter region (44), an inactive base region (33), and an active base region (43) is formed on a thin film of semiconductor material (13) in the bipolar junction transistor area (18). A link between the inactive base region (33) and the active base region (43) is formed from a polysilicon spacer (42) along an edge or sidewall of emitter openings (39 or 40). Simultaneously with the formation of the bipolar junction transistor, MOS transistors are formed in the MOS transistor area (19). Electrically conductive contacts (56) in the bipolar junction transistor area (18) and the MOS transistor area (19) are formed from a silicide. Both complementary bipolar junction transistors and MOS transistors may be formed.

Depletion-electric-field-induced changes in second-harmonic generation from GaAs.

Abstract: Experiments reveal that the near surface second-order nonlinear optical susceptibility, χ (2) (2ω,ω,ω), is significantly affected by band-bending induced-electric fields in the depletion region of GaAs(001). Both n- and p-type GaAs samples exhibit a reduction of the bulk second-order susceptibility χ yxz (2) , independent of electric field direction. A three band theoretical model was used to qualitatively explain these observations