Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.

Triboelectric Nanogenerator Enhanced Schottky Nanowire Sensor for Highly Sensitive Ethanol Detection.

Abstract: Highly sensitive ethanol sensors are important for environmental and industrial monitoring. In our work, we demonstrate a method to enhance the response of a Schottky sensor based on a ZnO nano/microwire (NMW) by triboelectric nanogenerator (TENG). Via lowering the Schottky barrier height (SBH) via the high voltage from TENG, the response of the sensor is enhanced by 139% for 100 ppm ethanol. This method accelerates the recovery process. The high voltage from TENG produces a high intensity electric field to drive diffusion of the oxygen vacancies in ZnO NMW toward to the junction area around the interface. It is equivalent to applying the reverse voltage on the Schottky junction, which leads to the increase of depletion width. More chemisorbed oxygen on the depletion region is consumed once the ethanol gas is injected into the chamber, which improves the response of the ethanol sensor. This study provides a new, simple, and effective method to improve the sensor response.

Flexible and Transparent Paper-Based Ionic Diode Fabricated from Oppositely Charged Microfibrillated Cellulose

Abstract: Recently, organic diodes have attracted great research interest because of their unique applications in flexible electronics. Electronic paper is one of the most attractive organic electronic devices. Hereby, we report a transparent, flexible, ionic diode paper made of two oppositely charged microfibrillated cellulose (MFC) sublayers. The current rectification ratio is around 15 at ±5 V and exhibits good repeatability at room temperature. Instead of forming a depletion region to rectify current, this paper diode uses asymmetric charge distribution to selectively control the ion diffusion direction. The asymmetric charge distribution inside the diode paper can selectively transport cations and anions under positive and negative bias, to allow an electric current to pass in one direction while being blocked in the opposite direction. Although the mechanism is quite different from semiconductor-based p–n junction, the phenomenon turns out to be very similar. It was found that the moisture content, thickness ...

An investigation of the spatial location of proton-induced traps in SiGe HBTs

Abstract: The effects of 46 MeV proton irradiation induced trap generation and its impact on the electrical characteristics of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) from an advanced ultrahigh vacuum/chemical vapor deposition (UHV/CVD) SiGe BiCMOS technology are examined and discussed for the first time. At proton fluences as high as 10/sup 14/ p/cm/sup 2/ the peak current gain of the devices degraded by less than 8% compared to the pre-irradiated samples. The maximum oscillation frequency and cutoff frequency of the SiGe HBTs showed only minor degradation after 10/sup 14/ p/cm/sup 2/. Calibration of 2-D device simulation (MEDICI) to measured data in both forward and inverse modes of operation was used to infer the spatial location of the proton-induced traps. Traps in the collector-base space charge region appear as generation/recombination (G/R) centers in the inverse emitter-base region and are the result of displacement damage. Traps at the emitter-base spacer oxide interface appear as G/R centers in the forward emitter-base space charge region and are the result of ionization damage. Taken together, these results suggest that UHV/CVD SiGe HBT technology is robust to proton fluences at least as high as 10/sup 13/ p/cm/sup 2/ without radiation hardening.

Solid-state image-sensing device and method for producing the same

Abstract: A solid-state image-sensing device has pn-junction sensor parts isolated corresponding to pixels by a device isolation layer The solid-state image-sensing device includes a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and the device isolation layer When the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of the sensor parts

n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition

Abstract: n-type control was achieved by sulfur-ion-implantation in homoepitaxial diamond (100) films grown by chemical vapor deposition (CVD) for the first time. Sulfur-implantation was carried out with energies of up to 400 keV at 400°C. The activation energy of the conductivity was 0.19–0.33 eV depending on the conditions of ion implantation. A junction between this layer and a boron-doped p-type layer was fabricated by combining sulfur-implantation with gas-phase boron doping during CVD. The junction exhibited clear pn junction properties. The capacitance of the junction decreased with reverse bias voltage, which confirms that the depletion region of the junction was actually extended with the reverse bias voltage.