Topic
Depletion region
About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.
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TL;DR: In this paper, the acceptor passivation of acceptor-passivating hydrogen species in p-type GaAs has been observed in reverse bias annealed Al Schottky diode samples.
Abstract: Transport of the acceptor‐passivating hydrogen species in p‐type GaAs has been observed in reverse bias annealed Al Schottky diode samples. The motion of the positively charged hydrogen across the depletion region of these diodes is confirmed both by changes in the electrically active acceptor profiles with time, and by direct measurement of the migration using secondary‐ion mass spectrometry on deuterated samples. Acceptor passivation is unstable under minority‐carrier injection by illumination at 25 °C. Hydrogen injection into p‐type GaAs during boiling in water or etching in H2SO4:H2O2:H2O has also been demonstrated.
50 citations
TL;DR: In this paper, the effects of depletion layer capacitance and recombination current on the open circuit voltage decay of real silicon diodes have been investigated, and it was shown that each of these depletion layer effects is significant only below a threshold junction voltage that depends upon material parameters of the device.
Abstract: There is a renewal of interest in open circuit voltage decay as a technique for determining the base region minority carrier lifetime in semiconductor diodes. Although the existing theory of open circuit voltage decay provides a substantial foundation for interpreting the experimental data, major features of the decay curves of real silicon diodes cannot be satisfactorily explained unless depletion layer effects are taken into account. Theoretical decay curves are calculated to show the effects of depletion layer capacitance and recombination current on the otherwise ideal open circuit voltage decay. From these and from experimental decay curves, it is shown that each of these depletion layer effects is significant only below a threshold junction voltage that depends upon material parameters of the device.
50 citations
TL;DR: In this paper, the gross features of such junctions are described and electrical measurements of the forward bias and reverse bias current, reverse bias capacitance and transient response are given for room temperature.
Abstract: p − n junctions have been prepared by locally alloying a vacuum-evaporated Al film into n -type Si with a focused heat pulse derived form a Nd:YAG laser. The preparation and the gross features of such junctions are described and electrical measurements of the forward bias and reverse bias current, reverse bias capacitance and transient response are given for room temperature. The forward and reverse bias current measurement show that charge recombination and generation within the depletion region controls the flow of current as would be expected for a Si junction. The reverse bias capacitance shows that the change in the doping profile in these junctions is abrupt. From the transient response the reverse recovery time is typically 0.5 × 10 −9 sec.
50 citations
Patent•
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22 Jan 1971
TL;DR: In this paper, a sensor for detecting given constituents of an atmosphere employing a solid state device formed by a glass-ceramic element having a depletion layer exposed to the atmosphere in which a given gas or vapor is to be sensed.
Abstract: A sensor for detecting given constituents of an atmosphere employing a solid state device formed by a glass-ceramic element having a depletion layer exposed to the atmosphere in which a given gas or vapor is to be sensed. The glass-ceramic sensor is formed with two terminals on opposite sides of the depletion layer and the terminals are connected into a circuit establishing a potential difference between the terminals across the depletion layer. By forming the glass-ceramic element of a material in which leakage currents between the terminals through the glassceramic sensing element will be produced by the presence of a given material in the atmosphere, sensing results.
50 citations
TL;DR: In this article, the formation of As precipitates in doped GaAs structures that were grown by molecular beam epitaxy at low substrate temperatures and subsequently annealed was studied. And it was shown that the excess As results in a stable Be profile even to anneals of 950 °C.
Abstract: We have studied the formation of As precipitates in doped GaAs structures that were grown by molecular beam epitaxy at low substrate temperatures and subsequently annealed. We find that the As precipitates form preferentially on the n side of such fabricated GaAs pn junctions. As the coarsening process proceeds, there is a gradual increase in the amount of As in precipitates in the n‐GaAs region and a decrease in the p‐GaAs region; the depletion region between the pn junction becomes free of As precipitates. These observations can be understood qualitatively based on the charge states of the As interstitial and using thermodynamic arguments in which the crystal attempts to minimize the chemical potential during the anneal. The presence of the excess As results in a stable Be profile even to anneals of 950 °C. Finally, a temperature cycling technique to grow arbitrarily thick GaAs epilayers containing As precipitates was demonstrated.
50 citations