Topic
Depletion region
About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.
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TL;DR: In this paper, the surface potential effect in GaAs MESFETs caused a depleted zone to form not only between the source and gate, but also between the gate and drain.
Abstract: The surface potential effect in GaAs MESFETs causes a depleted zone to form not only between the source and gate, but also between the gate and drain. The consequences of this phenomenon on the device behavior, the DC and AC characteristics, and the expected performance are studied. For this purpose, a two-dimensional resolution of the basic semiconductor equations is used. This model takes into account relaxation effects by including an energy relaxation equation. The dependence of MESFET characteristics such as transconductance, output conductance, and capacitance on the dimensions of the zone where surface potential effects occur is given. Some interesting conclusions concerning the optimization of recessed-gate structures are drawn. >
50 citations
Patent•
21 Jan 1987
TL;DR: In this article, the authors proposed to improve the efficiency and accuracy of information writing by deeply inverting the separating region of a source region and a floating gate at writing time in an EPROM, thereby preventing between the source and the drain from punching through.
Abstract: PURPOSE:To improve the efficiency and the accuracy of information writing by deeply inverting the separating region of a source region and a floating gate at writing time in an EPROM, thereby preventing between the source and the drain from punching through. CONSTITUTION:An EPROM cell has an N type drain region 4 and an N type source region 5 in an element forming region separated and presented at a P type silicon substrate 1 by a field SiO2 film 2 and a P-type channel stopper 14. A floating gate 7 made of polycrystalline silicon layer is arranged, and a control gate 9 made of polycrystalline silicon layer is extended and disposed on the region 5 and the separating portion OFS. A deep inverted layer INV is formed on the substrate of the separating portion OFS by a selective voltage applied to the gate 9 at writing time, the layer INV suppresses the extension of a depletion layer DEP, thereby effectively writing without punch- through between the source and the drain.
50 citations
TL;DR: This unique Al tunnel junction overcomes some of the critical issues related to conventional GaN-based tunnel junction designs, including stress relaxation, wide depletion region, and light absorption, and holds tremendous promise for realizing low-resistivity, high-brightness III-nitride nanowire LEDs in the visible and deep ultraviolet spectral range.
Abstract: We have demonstrated for the first time an n(++)-GaN/Al/p(++)-GaN backward diode, wherein an epitaxial Al layer serves as the tunnel junction. The resulting p-contact free InGaN/GaN nanowire light-emitting diodes (LEDs) exhibited a low turn-on voltage (∼2.9 V), reduced resistance, and enhanced power, compared to nanowire LEDs without the use of Al tunnel junction or with the incorporation of an n(++)-GaN/p(++)-GaN tunnel junction. This unique Al tunnel junction overcomes some of the critical issues related to conventional GaN-based tunnel junction designs, including stress relaxation, wide depletion region, and light absorption, and holds tremendous promise for realizing low-resistivity, high-brightness III-nitride nanowire LEDs in the visible and deep ultraviolet spectral range. Moreover, the demonstration of monolithic integration of metal and semiconductor nanowire heterojunctions provides a seamless platform for realizing a broad range of multifunctional nanoscale electronic and photonic devices.
50 citations
TL;DR: In this paper, a reactive sputtering process in an oxygen-containing atmosphere was used to demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy.
Abstract: n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.
49 citations
TL;DR: In this article, two bipolar parts, AMD 27LSOO and Fairchild 93L422, were irradiated at fixed angles while varying the linear energy transfer (LET) of two ion species.
Abstract: Current SEU testing and analysis techniques have as basic assumptions that the charge deposited at a junction depends linearly on the linear energy transfer (LET) of the ion and the pathlength of the ion through an imagined parallelepiped that represents the depletion region. This study tests these assumptions for two bipolar parts, AMD 27LSOO and Fairchild 93L422, by irradiating at fixed angles while varying the LET of two ion species. It was found that the 27LSOO shows a pronounced ion species dependence, and may show a deviation of deposited charge from the usual inverse-cosine times a fixed depletion depth, while the 93L422 exhibited the expected inverse-cosine dependence and no ion species dependence.
49 citations