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Depletion region
About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.
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TL;DR: This paper reviews the peculiar features of the non-equilibrium electric double layer and extended space charge and the possibility of their direct probing by harmonic voltage/current perturbations through a linear and non-linear system's response, by the methods of electrical impedance spectroscopy and via the anomalous rectification effect.
47 citations
01 Jan 2000
TL;DR: In this paper, the authors examined the ideality factor of depletion-region recombination mDR, with a particular emphasis on its maximum value, and showed that the models with more assumptions tend to overestimate mDR.
Abstract: This paper examines the ideality factor of depletion-region recombination mDR, with a particular emphasis on its maximum value. Several theoretical models of depletion-region recombination are discussed and it is shown that the models with more assumptions tend to overestimate mDR. Numerical simulations are then used to determine the maximum value of mDR for both step-junction and di usedjunction solar cells, for the case when the trap density is uniformly distributed across the depletion region. The maximum value of mDR is found to increase with doping from 1.7 to 2 for step junctions; and to be approximately 1.8 for all practical doping levels of di used junctions.
47 citations
01 Jan 1981
TL;DR: In this paper, the Schottky barrier solar cells were used to recover the energy of the photovoltaic cells from a given plane of interest, and the authors showed that the capacity of these cells can be improved by using a modified version of the SBSC under illumination.
Abstract: Recombination in Solar Cells: Theoretical Aspects- 1 Introduction- 2 Conventions Usually Made for p-n Junctions and Solar Cells- 3 Three Laws of Photovoltaics- 4 Maximum Power, Recombination and the Ideality Factor- 5 Junction Currents as Recombination Currents- 6 Steady-State Recombination Rates at a Given Plane X- 7 Junction Model and Space-Dependences- 8 Transition Region Recombination Current Density- 9 The Bulk-Regions Recombination Current Density- 10 Summery of p-n Junction Current Densities from Sections 8 and 9- 11 Configuration and Electrostatics of the Schottky Barrier Solar Cell- 12 The Place of Recombination Effects in (p-type) Schottky Barrier Solar Cells- 13 Recombination Currents and Voltage Drops in (p-type) Schottky Barrier Solar Cells- 14 Conclusion- A Few More General Topics- (I) Thermodynamic Efficiency- (II) Simple Theory to See that an Optimum Energy Gap Exists- (III) Is Dollars per Peak Watt a Good Unit?- (IV) Energy Unit for Global Use- (V) When will Solar Conversion be Economically Viable?- References- Schottky Barrier Solar Cells- 1 Introduction- 2 The Schottky Barrier Cell Principle- 21 Principle of SBSC Operation- 22 Current Transport Mechanism in Schottky Barriers- 23 Effect of the MIS Potential Distribution upon the Diode Quality Factor n- 24 The MIS SBSC under Illumination- 25 The Minority Carrier MIS SB Cell- 3 Solar Cell Parameters and Design Considerations- 31 Metal-Semiconductor Barrier Height- 32 Diode Quality Factor n- 33 Interfacial Oxide Thickness- 34 Transmission Properties of the Metal- 35 Spectral Response- 36 Substrate Resistivity- 37 Substrate Thickness- 38 Series Resistance- 4 Results and Discussion of Typical Silicon MIS Cells- 41 Open Circuit Voltage- 42 Short Circuit Current Density- 43 Fill Factor- 44 Efficiency- 45 The Min MIS Cell- 46 The MIS Inversion Layer Cell- 47 Stability of MIS Solar Cells- 48 The Future for MIS Cells - Cheaper Substrates?- Acknowledgement- References- CdS-Cux S Thin Film Solar Cells- 1 Introduction- 2 CdS Thin Film Technology- 21 Vacuum Vapor Deposition of CdS Films- 22 Sputtering- 23 Spray Deposition- 24 Sintering- 3 CuxS Thin Film Technology- 31 Dipping Process (Wet Process)- 32 Evaporation of CuCl- 33 Evaporation of CuxS- 34 Sputtering of CuxS- 4 Properties of the CdS Layer- 41 Crystallography and Grain Size of CdS Films- 42 Optical Properties of the CdS Films- 43 Luminescence- 44 Electrical Properties of CdS Films- 5 Properties of CuxS Films- 51 Stoichiometry- 52 Coulometric Titration- 53 Optical Properties- 54 Electrical Properties- 6 Properties of the Heterojunction- 61 Structure of the Heterojunction- 62 Surface Effects of the CuxS Film- 63 Capacitance Measurements- 64 Diffusion Length in CuxS and CdS- 65 Spectral Response- 66 Band Diagram- 7 Technology of CdS-CuxS Photovoltaic Generators- 71 Cell Structures- 72 Fabrication Process of CdS-CuxS Cells- 8 Performance Characteristics of Solar Cells and Generators- References- Conversion of Solar Energy Using Tandem Photovoltaic Cells Made from Multi-Element Semiconductors- I Introduction- II Increasing Efficiency by Recourse to Tandem PV Cell Systems- III Design of an Optimized Solar Cell Structure for Tandem Cell Systems- IV Selection of Semiconductors for Tandem Solar Cell Systems- V Optimized Design of Direct Gap Photovoltaic Cells- VI Monolothic and Split Spectrum Tandem Cell Systems- VII Synthesis and Properties of Ternary Alloy Chalcopyrite Semiconductors- VIII Thin Films of CuInSe2 and Solar Cells Made from Them- IX Summary and Conclusions- References- The Principles of Photoelectrochemical Energy Conversion- I Sunlight Conversion into Chemical Energy- Photoredox Reactions- Redox Energies and the Scales of Redox Potentials- Photosynthesis as an Example- Artificial Systems for Energy Conversion- References to Lecture for Further Reading- II Fundamentals of Semiconductor Electrochemistry- The Space Charge Layer- Kinetics of Electron Transfer Reactions- References- III The Semiconductor Electrolyte Contact under Illumination and Photodecomposition Reactions- Distribution of Electrons and Holes under Illumination- Photodecomposition of Semiconductors- References- IV Photoelectrochemical Cells and their Problems- Regenerative Cells- Storage Cells- Energy Conversion Efficiency- References- Photoelectrochemical Devices for Solar Energy Conversion- General Discussion of Photoelectrochemical Devices- Semiconductor Electrolyte Junctions - Conventional Picture- Photo-Induced Charge Transfer Reactions- Semiconductor Electrode Stability- Electrochemical Photovoltaic Cells- Photoelectrosynthetic Cells- Photoelectrolysis Cells- Photocatalytic Cells- General Considerations- Effects and Importance of Surface States- Unpinned Band Edges- Hot Carriers- Surface Modification- Electrochemical Photovoltaic Cells- Reduced Surface and Grain Boundary Recombination- Non-aqueous Electrolytes- Storage Systems- General Status and Prognosis for Electrochemical Photovoltaic Cells- Photoelectrosynthetic Cells- Derivatized Electrodes- Photo-Oxidation and Photo-Reduction on the same Surface and in Particulate System- Dye Sensitization- Layered Compounds and other New Materials- General Status and Prognosis for Photoelectrosynthesis- Acknowledgement- References- The Iron Thionine Photogalvanic Cell- The Reaction Scheme- The Differential Equation- The Characteristic Lengths- The Kinetic Length- Bleaching and the Generation Length- The Recipe for Success- The Electrode Kinetics- Current Voltage Characteristics- Homogeneous Kinetics- The Iron Thionine System- The Reaction Scheme- Quantum Efficiencies- The Parameters- Rotating Transparent Disc Electrodes- The Thionine System- The Synthesis of Modified Thiazine Dyes- The Properties of the Modified Dyes- Self Quenching- Summary of Progress to Date- Electrode Selectivity- The Problem- The Manufacture of the Thionine Coated Electrode- Properties of the Thionine Coated Electrode- Electrode Kinetics- Application to Photogalvanic Systems- The Efficiencies of Photogalvanic Cells- The Concentration of Fe(II)- The Concentration of Ee(III)- The Variation of Power with ?E? and k-2- Variation with pH- Final Summary- Acknowledgements- References- Charge Separation and Redox Catalysis in Solar Energy Conversion Processes- 1 Introduction- 2 Design of Photoredox Reactions for Photodissociation of Water- 21 Photodecomposition of Water in Homogeneous Solutions- 22 Photoproduction of H2 from Water- 221 Photolysis of Simple Ions in Acid Media- 222 Photolysis of Metal Hydrides- 223 H2 Production via Dye-Sensitized Redox Reactions- 224 Photochemistry of Selected Redox Systems for H2 Evolution- 23 Redox Systems for O2-Evolution from Water- 231 Photo-Induced Oxygen Evolution from Water- 3 Stabilization of Redox Intermediates through the Use of Multiphase Systems- 31 Micelles- 311 Photoionisation- 312 Light Induced Electron Transfer in the Micelle- 313 Solution and Spatial Separation of Reactants in Micelles- 314 Functional Micellar Systems- a) Redox Reactions in Transition Metal Ion Micelles- b) Micelles Formed with Crown Ether Surfactants- c) Micelles with Long Chain Derivatives of Sensitizer or Acceptor Relays- 32 Light-Induced Charge Separation in Vesicles- 33 Charge Separation Phenimena in Other Multiphase Systems- 4 Redox Catalysis- 41 Concept of Redox Catalysis- 42 Redox Catalysis in the H2 -Evolution Reaction from Water- 43 Redox Catalysis in the O2Evolution Reaction from Water- 44 Coupled Redox Catalysts for Water Decomposition- 5 Photoelectrochemical Cells Based on Redox Reactions- References- Author Index
47 citations
Patent•
23 Mar 1981TL;DR: In this paper, a majority carrier rectifying barrier semiconductor device housing a planar doped barrier is described. But the device is fabricated in GaAs by an epitaxial growth process, which results in an n+ -i-p+ −i-n+ semiconductor structure wherein an extremely narrow p+ planar Doped region is positioned in adjoining regions of nominally undoped (intrinsic) semiconductive material.
Abstract: Disclosed is a majority carrier rectifying barrier semiconductor device housing a planar doped barrier. The device is fabricated in GaAs by an epitaxial growth process which results in an n+ -i-p+ -i-n+ semiconductor structure wherein an extremely narrow p+ planar doped region is positioned in adjoining regions of nominally undoped (intrinsic) semiconductive material. The narrow widths of the undoped regions and the high densities of the ionized impurities within the space charge region results in rectangular and triangular electric fields and potential barriers, respectively. Independent and continuous control of the barrier height and the asymmetry of the current vs. voltage characteristic is provided through variation of the acceptor charge density and the undoped region widths. Additionally, the capacitance of the device is substantially constant with respect to bias voltage.
47 citations
TL;DR: In this article, a model for interfacial segregation in perovskites, with induced heterogeneous defect distributions, is extended to account for the formation of internal boundary layer devices, such as positive temperature coefficient of resistance (PTCR) thermistors and internal boundary-layer capacitors (IBLC).
Abstract: A proposed model for interfacial segregation in perovskites, with induced heterogeneous defect distributions, is extended here to account for the formation of internal boundary layer devices, such as positive temperature coefficient of resistance (PTCR) thermistors and internal boundary layer capacitors (IBLC). Boundary layer effects in doped BaTiO3 are attributed to factors which contribute to the formation of highly resistive boundary layers by a segregation-induced shift in donor incorporation and/or acceptor segregation, and the inhibiting action of segregated donors on boundary mobility and grain growth. The distribution of space charges, formed by electron transfer from conductive grains to resistive boundary layers, leads to the formation of impedance barriers in the grain-boundary vicinity. Depending on the grain size, and on relative size and spatial distribution of the space charge layer and the resistive layer, a transition from semiconducting properties to insulating properties may take place. This model accounts for the observed PTCR and IBLC phenomena.
47 citations