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Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the shortcircuit current generated by the electron beam of a scanning electron microscope when it impinges on the N-P junction of a solar cell is known to be dependent on the configuration used to investigate the cell's response, and the situation for one specific configuration is analyzed.
Abstract: The short-circuit current generated by the electron beam of a scanning electron microscope when it impinges on the N-P junction of a solar cell is known to be dependent on the configuration used to investigate the cell's response, and the situation for one specific configuration is analyzed. This configuration is the case in which the highly collimated electron beam strikes the edge of a planar junction a variable distance away from the edge of the depletion layer. An earlier treatment is generalized to encompass the ohmic contact at the back surface. The analysis employing Fourier and Wiener-Hopf techniques shows that it is impractical to determine the bulk diffusion length of a solar cell by a SEM used in the studied configuration unless the ohmic contact is partially removed.

46 citations

Patent
26 Oct 1998
TL;DR: In this article, the authors proposed a voltage adjusting section to adjust the voltage applied to a semiconductor substrate by means of a voltage adjustment section, controlling the length of a depletion layer in a photoelectric transducing section, and electrically changing spectral sensitivity, without selecting the wavelength band of received light by a variable filter.
Abstract: PROBLEM TO BE SOLVED: To realize a smaller device by adjusting the voltage applied to a semiconductor substrate by means of a voltage adjusting section, controlling the length of a depletion layer in a photoelectric transducing section, and electrically changing spectral sensitivity, without selecting the wavelength band of received light by a variable filter. SOLUTION: In a solid-state image-pickup device 1, electric charges accumulated in a photoelectric transducing section 11 are transferred by electric charge transferring sections 12. The photoelectric transducing section 11 is composed of an n+ region on the substrate surface side of a p-well region 10a in a substrate 10 made of n-type semiconductor, and the voltage applied to the substrate 10 is adjusted by a voltage- adjusting section 13. An overflow drain 14 is disposed on the opposite side of the photoelectric transducing section 11 to the electric charge transferring sections 12 corresponding to the photoelectric transducing section 11. A predetermined bias voltage is applied so as to adjust the saturated amount of signal of the photoelectric transducing section 11. A predetermined voltage is applied to the substrate 10 from the voltage-adjusting section 13, in response to a switching signal S, the height of an overflow barrier in the photoelectric transducing section is adjusted according to the voltage, and the length of a depletion layer is adjusted so as to control spectral sensitivity.

46 citations

Journal ArticleDOI
R.R. Bockemuehl1
TL;DR: In this article, the authors derived expressions for mutual transconductance, output conductance, junction capacitance and current amplification as functions of the depletion layer thickness at the device boundaries, and showed that the relationship between small-signal and dc terminal characteristics depend on the shape of the charge distribution curves but cannot be varied by more than a factor of two.
Abstract: Solutions of field effect equations in which carrier density and space-charge distributions are considered in general form show that the LF terminal characteristics are not strongly dependent on the shape of the distribution curves. General expressions for mutual transconductance, output conductance, junction capacitance and current amplification are derived as functions of the depletion layer thickness at the device boundaries. These expressions are not explicitly dependent on charge distribution. Relationships between the small-signal and dc terminal characteristics depend on the shape of the charge distribution curves but cannot be varied by more than a factor of two. The shape of the device is shown to have secondary importance.

46 citations

Journal ArticleDOI
TL;DR: In this article, a ferroelectric-semiconductor hybrid structure for photoelectrochemical applications was designed and fabricated, and the photocurrents of the hybrid photoanodes were enhanced by 60 ± 5% and 85 ± 15% with water oxidation and reduction respectively under the illumination of a monochromater (λ = 365nm).

46 citations

Journal ArticleDOI
TL;DR: In this article, the effects of Al2O3 interlayer on the electrical characteristics have been investigated at room temperature, where capacitance/conductance-voltage frequency (C/G-V-f) measurements were performed in the wide range frequency (1kHz-5 MHz) and voltage (± 3 V) to get more reliable and accuracy results on the barrier height (BH) formation at Al/p-Si interface, conduction mechanisms, and main electrical parameters.
Abstract: In this study, Al/Al2O3/p-Si (MIS) type structures were fabricated and then the effects of Al2O3 interlayer on the electrical characteristics have been investigated at room temperature. For this purpose, capacitance/conductance-voltage-frequency (C/G-V-f) measurements were performed in the wide range frequency (1kHz-5 MHz) and voltage (±3 V) to get more reliable and accuracy results on the barrier height (BH) formation at Al/p-Si interface, conduction mechanisms, and main electrical parameters. Experimental results indicate that C and G/ω values are strong function of frequency and voltage particularly in the regions of accumulation and depletion. Calculating from the interception and slope of C−2-V plot, the doping acceptor atoms (NA), BH and depletion layer width (WD) were obtained for each frequency, respectively. Both BH and WD values exponentially increase by frequency increment. Nicollian-Brews method were used to extract voltage dependence profiles of Rs and frequency from C and G data.

46 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202326
202266
2021151
2020198
2019229
2018239