Topic
Depletion region
About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.
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Patent•
24 Sep 2001
TL;DR: In this paper, a dielectric layer on a circuitized layer having a conductive region is inserted into the aperture, and heat and pressure can be applied to the combination in order to form an intermetallic region from the depletion region.
Abstract: Embodiments of the invention are directed to a method comprising depositing a dielectric layer on a circuitized layer having a conductive region. The dielectric layer is preferably a bonding sheet. An aperture is formed in the dielectric layer over the conductive region. A conductive body, disposed on another circuitized substrate, is inserted into the aperture. The conductive body comprises a main region (e.g., a conductive post) and a depletion region (e.g., a thin layer of metal or transient liquid alloy bonding material). The depletion region contacts the conductive region on the circuitized layer, and the circuitized layers are laminated together. Heat and pressure can be applied to the combination in order to form an intermetallic region from the depletion region.
43 citations
TL;DR: In this article, the authors measured the responsivity of monochromatic lights at wavelength 420, 530, 570 and 630 nm and showed that the diodes exhibit strong responsivity in the blue region at 420 nm.
43 citations
Patent•
25 Feb 1984
TL;DR: In this paper, the authors proposed to improve the write efficiency by enhancing the injection efficiency of hot electrons by enlarging a channel width on the drain side, where the hot electrons generated by an avalanche breakdown in a depletion region close to the drain 8 are injected to the gate 4 by the electric field the gate 5 forms and is then accumulated.
Abstract: PURPOSE:To contrive to improve the write efficiency by enhancing the injection efficiency of hot electrons by enlarging a channel width on the drain side. CONSTITUTION:A drain region 8 and a source region 9 are formed on one main surface part of a semiconductor substrate, and a channel part 10a is formed between the region 8 and the region 9. On this part 10a, a floating gate 4 is provided by insulation from the substrate, and a control gate 5 by insulation from the gate 4. In this constitution, the width of the part 10a on the drain 8 side is more enlarged than that of the other part. Thereby, a part of the hot electrons generated by an avalanche breakdown in a depletion region close to the drain 8 is injected to the gate 4 by the electric field the gate 5 forms and is then accumulated, but the injection efficiency increases by enlargement of the channel width on the drain 8 side. Therefore, the write time is shortened, and then the write efficiency can be improved.
43 citations
PARC1
TL;DR: A new class of experiments is described that provides fresh opportunities for the isolation and measurement of the basic energetic and kinetic parameters determining the behavior of interstitial hydrogen in semiconductors.
Abstract: A new class of experiments is described that provides fresh opportunities for the isolation and measurement of the basic energetic and kinetic parameters determining the behavior of interstitial hydrogen in semiconductors. The technique involves the release of monatomic hydrogen at a sharply defined time and in a known spatial pattern by exposure of dopant-hydrogen complexes in the depletion layer of a Schottky diode to a pulse of minority carriers, and the subsequent time-resolved measurement of the capacitance transient that arises from hydrogen migration, charge-state changes, and complex reformation. The new technique is demonstrated with a measurement of the diffusion coefficient of the ${\mathrm{H}}^{\mathrm{\ensuremath{-}}}$ species in silicon. Also, useful constraints are presented relating to the energies of the hydrogen donor and acceptor levels and the rates of spontaneous charge changes among ${\mathrm{H}}^{+}$, ${\mathrm{H}}^{0}$, and ${\mathrm{H}}^{\mathrm{\ensuremath{-}}}$.
43 citations
TL;DR: In this paper, the authors examined the field-emission current-voltage behavior for germanium crystals ranging from 0.001−Ωcm n to 0.0006−µcm p type, whose surfaces were prepared by high field evaporation.
Abstract: The field‐emission current‐voltage behavior was examined for germanium crystals ranging from 0.001‐Ωcm n to 0.0006‐Ωcm p type, whose surfaces were prepared by high‐field evaporation. In contrast to the emission from n‐type crystals from which linear Fowler‐Nordheim data were always obtained, the emission from p‐type crystals produced nonlinear F‐N curves which were strongly influenced by temperature and illumination. This behavior was caused by the presence of a narrow, high‐resistance region near the emitting surface of the p‐type crystals. It is proposed that this depletion region was produced by surface inversion due to field penetration. Supporting evidence for this hypothesis was obtained from the spectral response and quantum efficiency of photoenhanced field emission and from measurements of the resistance and spatial profile of the depletion region. There was also evidence for carrier multiplication at high fields, leading to avalanche breakdown of the depletion region.
43 citations