Topic
Depletion region
About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.
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TL;DR: In this article, electron transfer reactions between excited ruthenium tris-bipyridyl complexes and semiconductor electrodes are described, such as recombination via surface states and tunneling processes through the space charge layer of heavily doped semiconductor electrode.
43 citations
TL;DR: In this paper, a GaAs detector was constructed using two FETs and one OP amp for room temperature applications, and a simple charge sensitive preamplifier was used to make a simple X-or?-ray spectrometer.
Abstract: Gallium arsenide surface barrier diodes have been fabricated from high purity level materials. These devices have an Au surface barrier having a depletion layer thickness of from 70?mto 1 mm and an area of from 3mm2-27mm2. These devices have been operated as ?-particles, / s-ray, and ?-ray spectrometers and detectors. The best energy resolutions taken with a GaAs detector made from liquid phase epitaxial GaAs wafer were 20keV (fwhm) and 8 keV for 5.486 MeV ?-particles from 241Am and 115 keV conversion electrons from 57Co at room temperature, respectively. For room temperature applications, a simple charge sensitive preamplifier was constructed using two FETs and one OP amp. The combination of a encapsulated GaAs detector and two small semiconductor thermoelements (electrical cooling device) was studied to make a simple X-or ?-ray spectrometer. A special tiny GaAs detector was also fabricated as in vivo s-ray counting detector in biomedical applications. The energy per electron-hole pair (?) in GaAs was measured at 4.35 + 0.02 eV for ?-particles with a linear variation with bandgap energy (Eg) of 2.53 over a temperature range of 1950°K to 330°K, and 4.57 eV for conversion electrons (115keV) at 300°K, respectively. The ? vs Eg relationship was also investigated for Ge, Si, GaAs and CdTe using experimental values and led to ? = 2. 596 Eg + 0.714 (eV) with correlation coefficient of 0.999 at 300°K. The related problems for intrinsic material constant (?) are discussed for several semiconductor materials.
43 citations
TL;DR: In this article, an analysis of the resulting oxide current as a function of the reverse voltage applied to the source and drain regions is carried out using an extension of a model proposed by Shockley.
Abstract: Electrons can be injected from silicon into silicon dioxide in a metal‐oxide‐semiconductor‐transistor (MOST) structure in which electrons are accelerated in the depletion layer of the channel region in a direction perpendicular to the Si‐SiO2 interface. An analysis of the resulting oxide current as a function of the reverse voltage applied to the source and drain regions is carried out using an extension of a model proposed by Shockley. This leads to an estimate of the mean free path λ of the hot electrons in the silicon. It appears that a heavily doped source and drain, formed by a phosphorus diffusion, or the dislocations generated by this diffusion, have the effect of increasing λ by, presumably, the removal of scattering centers. The largest value of λ observed, λ=135 A, is possibly equal to the value of the mean free path for the generation of high‐energy phonons.
43 citations
TL;DR: In this article, it was shown that a relatively small number of traps in the barrier region can have a profound influence on the onset of the enhancement-type field-effect conduction and its temperature dependence.
Abstract: Field- and Hall-effect measurements were performed on CdSe polycrystalline films at temperatures between −150 and +90°C. The mobility increased with carrier concentration over two orders of magnitude. This can be explained by the polycrystalline film model. It will be shown that in such a model a relatively small number of traps in the barrier region can have a profound influence on the onset of the enhancement-type field-effect conduction and its temperature dependence.
43 citations
TL;DR: In this paper, optical waveguide detectors were fabricated by taking advantage of this absorption mechanism in the presence of a Schottky barrier depletion layer, and the detector response times less than 200 ns and external quantum efficiencies of 16% have been observed.
Abstract: Defect levels introduced by implanting GaAs with high-energy protons give rise to optical absorption at wavelengths greater than that of the normal absorption edge at 0.9 µ. Optical waveguide detectors may be fabricated by taking advantage of this absorption mechanism in the presence of a Schottky barrier depletion layer. Detector response times less than 200 ns and external quantum efficiencies of 16% have been observed.
43 citations