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Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the forward I-V characteristics of 4H-SiC p-i-n diodes are studied in a wide range of currents and temperatures by means of an analytical model that allows us to highlight the minority current contributions in various diode regions, namely, the highly doped regions, the neutral base, and the space charge layer.
Abstract: The forward I-V characteristics of 4H-SiC p-i-n diodes are studied in a wide range of currents and temperatures by means of an analytical model that allows us to highlight the minority current contributions in various diode regions, namely, the highly doped regions, the neutral base, and the space charge layer. By accounting for the doping dependence of various physical parameters, such as bandgap narrowing, incomplete doping activation, carrier lifetime, and mobility, the model turns useful to investigate the role of various material properties at different current levels and temperatures. The accuracy of the model is verified by comparisons with numerical simulations and experimental data in a wide range of currents and temperatures, so that this model turns very useful for better understanding the impact of technological parameters on the steady-state behavior of diodes and obtaining an accurate circuital model of diodes.

42 citations

Patent
09 Aug 2011
TL;DR: In this article, a gate-dielectric is interfaced directly onto the drain-tunneling region such that the drain tunneling region is between the source tunneling regions and the gate dielectric, so that the gate is configured to impose an external electric field which is oriented in parallel to the internal electric field of the depletion region.
Abstract: A low voltage tunnel field effect transistor includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction includes a depletion region interfacing together a source-layer and a drain-layer. The depletion region includes a source-tunneling-region of the source-layer and a drain-tunneling-region of the drain-layer. When no external electric field is imposed, the depletion region of the p-n tunnel junction has an internal electric field that substantially points towards the source-tunneling-region and the drain-tunneling-region. The gate-dielectric is interfaced directly onto the drain-tunneling-region such that the drain-tunneling-region is between the source-tunneling-region and the gate-dielectric. The gate is interfaced onto the gate-dielectric such that the gate is configured to impose an external electric field which is oriented substantially in parallel to the internal electric field of the depletion region.

42 citations

Journal ArticleDOI
TL;DR: The potential of Kelvin probe force microscopy for simultaneously probing the topography and the work function of individual nanowires is demonstrated and the width of the depletion layer is estimated.
Abstract: We demonstrate the potential of Kelvin probe force microscopy for simultaneously probing the topography and the work function of individual nanowires. Our technique allows us to visualize both the material and the doping contrast in single GaAs-based nanowires without the need to electrically contact the nanowires. In a GaAs/GaP heterostructure nanowire, a core-shell structure is found. This is attributed to a thermally activated radial overgrowth of GaAs, while in the GaP region the vertical nanowire growth dominates. In partially p-doped GaAs nanowires the doping transitions can be localized and the width of the depletion layer is estimated.

42 citations

Patent
16 Apr 1993
TL;DR: In this article, the authors proposed a laterally spreading N-type diffusion region with impurity concentration level higher than P-type and N-Type wells but lower than source and drain regions.
Abstract: A CMIS transistor suitable for device miniaturization, elimination of degradation of operational characteristics by hot carrier effect, and elimination of decrease of threshold voltage caused by short channel effect, includes a laterally spreading N-type diffusion region having an impurity concentration level higher than P-type and N-type wells but lower than source and drain regions, such that the N-type diffusion region extends laterally into a part located immediately below an edge of an insulating gate and has a depth smaller than a depth of the source and drain regions. The device is thereby capable of increasing the width of depletion layer at the bottom of the source and drain regions while maintaining effectiveness as a punch-through stopper. Thereby, the junction capacitance at the source and drain regions is reduced and the operational speed of the device improved in the P-channel transistor part in the device. In the N-channel transistor part, an effective suppression of punch-through is achieved because of the small diffusion depth of the N-type diffusion region. Thereby, the decrease of threshold voltage caused by the short channel effect is effectively eliminated even when the gate length of the transistor is reduced.

42 citations

Journal ArticleDOI
TL;DR: In this article, the use of a small spot of light for the detection of semiconductor inhomogeneities is described, which involves a scanned measurement of the surface photovoltage generated in the surface space charge region of the semiconductor.
Abstract: The use of a small spot of light for the detection of semiconductor inhomogeneities, is described. The method employed involves a scanned measurement of the surface photovoltage generated in the surface space charge region of the semiconductor. It is shown that scanned surface photovoltage signals may be used to detect defects in Si using either MOS, Schottky barrier or electrolyte contacts to sense the signal. Furthermore, from a spectral measurement it is possible to monitor the variation of carrier lifetime across the area of the sample. It has proven possible using the technique to detect both gross defects in the Si as well as to measure, on a point by point basis, the reduction in carrier lifetime due to them.

42 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202326
202266
2021151
2020198
2019229
2018239