Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.

Linear capacitor structure in a CMOS process

Abstract: A cumulative capacitor structure with desirably constant capacitance characteristics is disclosed. In one embodiment, the cumulative capacitor includes a set of four capacitors coupled in parallel between first and second terminals of the cumulative capacitor. In one embodiment, the first capacitor is comprised of a top plate formed of an n-type polysilicon coupled to the first terminal, a bottom plate comprised of a first accumulation/depletion region such as an n-well region coupled to the second terminal, and a first dielectric region between its top and bottom plates. The second capacitor has an n-type polysilicon terminal top plate coupled to the second terminal, an accumulation/depletion region bottom plate coupled to the first terminal, and a dielectric between its top and bottom plate. A third capacitor has a p-type polysilicon top plate coupled to the first terminal, an accumulation/depletion region bottom plate coupled to the second terminal, and a third dielectric region between its top and bottom plates. The fourth capacitor has a p-type polysilicon terminal coupled to the second terminal, an accumulation/depletion region bottom plate coupled to the first terminal, and a dielectric between its top and bottom plates.

Scanning tunneling spectroscopy of oxygen adsorbates on the GaAs(110) surface

Abstract: Spatially resolved measurements of the tunneling current versus applied voltage are obtained for oxygen adsorbed on the GaAs(110) surface, using a scanning tunneling microscopy (STM) Effects with different length scales are observed, arising from two sources of charge in the system: negatively charged adsorbates and a positively charged space charge layer The space charge layer produces band bending on n‐type material, which is observed as a shift in the onsets for tunneling out of and into the valence and conduction bands, respectively We analyze these shifts using theoretical calculations of the tunneling current through surface space charge layers Directly above an oxygen adsorbate on n‐type material, an enhancement in tunneling is observed near the top of the valence band edge, while a corresponding decrease is observed near the bottom of the conduction band This local behavior is identified as arising from changes is the surface density‐of‐states produced by the Coulomb potential of the charged

The dissociation energy and the charge state of a copper-pair center in silicon

Abstract: Thermal dissociation of Cu pairs was studied in p-type silicon. The dissociation energy of the Cu pair was found to be 1.02±0.07 eV, twice as high as the binding energy of a Coulombically bound donor-acceptor pair placed on nearest neighbor 〈111〉 sites. This implies that the pair is either covalently bonded, or it consists of an ionically bonded doubly negatively charged acceptor and a singly charged donor. To distinguish between these two models, the dependence of the hole emission rate on the electric field in the depletion region was studied. The absence of the Pool-Frenkel emission enhancement ruled out the acceptor nature of the center and the purely ionic type of bonding. On the other hand, the polarization potential describing emission from a neutral impurity gave a satisfactory fit to the experimental data. It is concluded that the Cu pair is a donor with either covalent or mixed type of bonding.

n-MoSe2/p-WSe2 heterojunctions

Abstract: The preparation of n‐MoSe2/p‐WSe2 heterojunctions by epitaxial growth of WSe2 (Eg=1.16 eV) on MoSe2 (Eg=1.06 eV) substrates is reported. The two semiconductors are nearly lattice matched along their hexagonal (001) base plane with Δa/a=0.25%. Diode capacitance‐voltage measurements show that the band edges of MoSe2 and WSe2 are aligned within ∼0.1 eV. The diode forward current at room temperature is carried by recombination in the depletion region.