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Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.


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Journal ArticleDOI
TL;DR: Based on the theory of semiconductor physics, the current paper presented a design scheme of isotope microbattery with wide-gap semiconductor material GaN and isotope 147Pm as mentioned in this paper.
Abstract: Betavoltaic radioisotope microbatteries have gradually become the research direction of micro-power sources because of their several advantages, including small scale, stable output performance, long service life, high energy density, strong anti-jamming capability, and so on. Based on the theory of semiconductor physics, the current paper presented a design scheme of isotope microbattery with wide-gap semiconductor material GaN and isotope 147Pm. In consideration of the isotope’s self-absorption effect, the current paper studied and analyzed the optimization thickness of semiconductor and isotope source, junction depth, depletion region thickness, doping concentration, and the generation and collection of electron hole pairs with simulation of transport process of beta particles in semiconductor material using Monte Carlo simulation program MCNP. In the proposed design scheme, for a single decay, an average energy of 28.2 keV was deposited in the GaN, and the short circuit current density, open circuit voltage, and efficiency of a single device were 1.636 μA/cm2, 3.16 V, and 13.4%, respectively.

38 citations

Journal ArticleDOI
TL;DR: In this paper, the current components associated with the grain boundaries of diffused p/n junction polysilicon solar cells made on n- and p-type Wacker substrates were analyzed and experimentally identified.
Abstract: The current components associated with the grain boundaries of diffused p/n junction polysilicon solar cells made on n- and p-type Wacker substrates are analyzed and experimentally identified. New electrical methods for determining the presence or absence of preferential diffusion along the grain boundaries and for determining the average doping density of preferentially diffused regions along the grain boundaries are described. For p-type substrates, these methods revealed preferential phosphorus diffusion along grain boundaries; no preferential boron diffusion along grain boundaries was observed. The recombination current components were analyzed for the cells in which preferential diffusion occurred. The analysis shows that the dominant current component at small bias levels (0-300 mV) is the recombination current at the grain boundaries within the p/n junction space-charge region. At higher bias levels ( V \simeq V_{OC} \simeq 500-600 mV), both this current component and the current component due to recombination at that part of the grain boundary below the preferentially diffused region are important. The grain-boundary shunt resistance does not contribute a significant current component. It is shown that the preferential diffusion makes negligible the recombination current injected into the sidewall of the preferentially diffused region. This is consistent with a model in which the phosphorus diffusion significantly lowers the surface recombination velocity at the grain boundaries and in which the retarding built-in electric field further decreases the recombination current.

38 citations

Journal ArticleDOI
TL;DR: In this article, the authors employed high pressure annealing with forming gas to improve the ferroelectric properties of metal-ferroelectric-semiconductor (MFS) FTJ.
Abstract: The various structures of ferroelectric tunnel junctions (FTJs) are widely studied. Among them, metal-ferroelectric-semiconductor (MFS) FTJs show great tunneling electroresistance (TER) ratio by forming a depletion region. However, the poor ferroelectricity of hafnia on semiconductor electrodes degrades the TER ratio. This study employed high-pressure annealing with forming gas to improve the ferroelectric properties of MFS FTJs. We achieved a high 2Pr value ( $47.54~\mu \text{c}$ /cm $^{2}$ ) and large TER ratio (22) in MFS FTJ for a 6 nm thick hafnia layer annealed at high pressure (200 atm) with forming gas. This work helps improve the quality of interface between a semiconductor and ferroelectric layer to increase the ferroelectricity of MFS stack devices.

38 citations

Patent
12 Oct 1973
TL;DR: In this article, a high voltage, high frequency metal oxide semiconductor device having a precisely controlled channel extending to the surface and in which a metallization overlies a thick insulating layer and substantially covers the depletion region in the drain for breakdown voltage control is described.
Abstract: High voltage, high frequency metal oxide semiconductor device having a precisely controlled channel extending to the surface and in which a metallization overlies a thick insulating layer and substantially covers the depletion region in the drain for breakdown voltage control.

38 citations

Patent
05 Mar 1981
TL;DR: In this paper, a barrier layer is constructed between the barrier and the substrate in such a thickness that, in order to inhibit injection of the photo-carriers having the same polarity as that of minority carriers in the barrier layer from the substrate side to the photoconductive layer, the probability of the carrier reaching the depletion layer region from a substrate side may be substantially neglected.
Abstract: A photoconductive member which is stable in its electrical and optical characteristics, not influenced by circumstances for its use, and possesses extremely high sensitivity to light, remarkably high anti-photo-fatigue property, and deterioration-resistant against repeated use, the photoconductive member comprising a substrate; a photoconductive layer; a barrier layer between the substrate and the photoconductive layer, and having a function of substantially inhibiting injection of carriers from the substrate side to the photoconductive layer; and a depletion layer region formed in the interfacial region of the photoconductive layer and the barrier layer, wherein the photoconductive layer and the barrier layer are made of an amorphous material with silicon as a matrix and hydrogen as a constituent atom, a part of the barrier layer is present between the depletion layer region and the substrate in such a thickness that, in order to inhibit injection of the carriers having the same polarity as that of minority carriers in the barrier layer from the substrate side to the photoconductive layer, probability of the carrier reaching the depletion layer region from the substrate side may be substantially neglected, and the photocarriers in the photoconductive layer having the same polarity as that of majority carriers in the barrier layer, among the photo-carriers to be generated in the photoconductive layer by irradiation of electromagnetic waves, are caused to move in the direction of the barrier layer.

38 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202326
202266
2021151
2020198
2019229
2018239