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Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.


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Journal ArticleDOI
TL;DR: In this paper, the transconductance of an accumulation layer on $n$-type InAs was studied in a magnetic field parallel to the layer, and structures were observed, nonperiodic in the magnetic field, corresponding to mixed electric and magnetic subbands.
Abstract: The transconductance of an accumulation layer on $n$-type InAs is studied in a magnetic field $\stackrel{\ensuremath{\rightarrow}}{\mathrm{H}}$ parallel to the layer. Structures are observed, nonperiodic in $\frac{1}{H}$, corresponding to mixed electric and magnetic subbands. The effect promises a simple, sensitive method of probing the shape of the self-consistent potential in surface space-charge layers with multiply occupied subbands.

35 citations

Journal ArticleDOI
TL;DR: In this article, the effects of postdeposition processes such as dip and/or annealing in air on the material and device properties of vacuum-evaporated Au-CdTe/CdS-TO heterojunction solar cells have been investigated.
Abstract: The effects of post-deposition processes such as dip and/or annealing in air on the material and device properties of vacuum-evaporated Au-CdTe/CdS-TO heterojunction solar cells have been investigated. The dip followed by air annealing at for 5 min improved the device efficiency significantly, resulting in decreased CdTe resistivity and enhanced grain size. The temperature-dependent current - voltage analysis indicated that above 280 K interface recombination dominates the current transport mechanism for the as-grown samples, while depletion region recombination starts to be dominant after annealing the samples with . Below 280 K multistep tunnelling is identified to be the dominant transport mechanism. Frequency-dependent capacitance - voltage studies revealed that after annealing with the density of interface states decreases and the quality of the heterointerface improves. The capacitance of the CdS/CdTe heterojunctions has been analysed using a model based on the existence of a single dominant trap level, identified at 0.40 eV above the valence band with a concentration of .

35 citations

Journal ArticleDOI
TL;DR: In this article, the flat-band potential of the semiconductor space charge layer and the position of the energy levels of a semiconductor/electrolyte system were determined based on ac resistance measurements.

35 citations

Journal ArticleDOI
TL;DR: In this paper, a highly nonlinear currentvoltage curve was obtained for the ZnO/glass/ZnO junction with Co-doped single crystals, and the current through the junction at the breakdown voltage was proportional to the 30th power of the bias voltage.
Abstract: Zinc oxide (ZnO) crystals joined by using an intergranular glass phase were investigated in order to develop surge filters for low-voltage applications and to clarify the current transport mechanism through the junction. The junctions having a ZnO/glass/ZnO sandwich structure were synthesized by using an interfacial glass phase of the Bi–B–O system. A highly nonlinear current–voltage curve was obtained for the ZnO/glass/ZnO junction with Co-doped ZnO single crystals, and the current through the junction at the breakdown voltage was proportional to the 30th power of the bias voltage. Dielectric measurements revealed that a double-sided depletion layer was formed at the interface, and the observed high nonlinearity was ascribed to the corresponding potential barrier formed at the interface.

35 citations

Journal ArticleDOI
TL;DR: Schottky diodes consisting of a metal layer in contact with an n-type ZnSe crystal are electroluminescent when biassed in the reverse direction.
Abstract: Schottky diodes consisting of a metal layer in contact with an n-type ZnSe crystal are electroluminescent when biassed in the reverse direction. Electrons tunnel from the metal into the semiconductor, are accelerated in the depletion layer field and then impact-ionize luminescent centres. Experiments confirming each of these mechanisms are described. A simple theory is propounded to give a quantitative understanding of the processes and of the performance of the diodes as light sources.

35 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202326
202266
2021151
2020198
2019229
2018239