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Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.


Papers
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Journal ArticleDOI
TL;DR: The extent of electrochemical modulation of L SPR frequency is governed by the depletion width and the extent of inter-NC LSPR coupling, which are indirectly controlled by the dopant density, size, and packing density of the NCs.
Abstract: Degenerately doped semiconductor nanocrystals (NCs) exhibit strong light–matter interactions due to localized surface plasmon resonance (LSPR) in the near- to mid-infrared region. Besides being readily tuned through dopant concentration introduced during synthesis, this LSPR can also be dynamically modulated by applying an external electrochemical potential. This characteristic makes these materials candidates for electrochromic window applications. Here, using prototypical doped indium oxide NCs as a model system, we find that the extent of electrochemical modulation of LSPR frequency is governed by the depletion width and the extent of inter-NC LSPR coupling, which are indirectly controlled by the dopant density, size, and packing density of the NCs. The depletion layer is a near-surface region with a sharply reduced free carrier population that occurs whenever the surface potential lies below the Fermi level. Changes in the depletion width under applied bias substantially control the spectral modulatio...

35 citations

Patent
24 Oct 1972
TL;DR: The disclosed junction field effect transistor (FET) as discussed by the authors is a gate configuration that enables either high power operation or high frequency operation or both by growing a first epitaxial layer having a predetermined crystallographic orientation on a substrate.
Abstract: The disclosed junction field-effect transistor (FET) has a precisely controlled gate configuration which enables either high power operation or high frequency operation or both. The FET is manufactured by steps including the growing of a first epitaxial layer having a predetermined crystallographic orientation on a substrate to form a drain. Next, a first anisotropic etch of the epitaxial layer provides "U"-shaped grooves with flat bottoms, therein through which a gate is diffused having internal side walls of uniform depth that define the source-to-drain channel. A second epitaxial layer is then grown on the surface of the first epitaxial layer and of the gate to provide a source. A second anisotropic etch exposes a portion of the gate, which also forms an etch stop, to facilitate electrical contact thereto. Current flowing through the channel is controlled in response to an input signal applied between the gate and source which adjusts the thickness of a depletion region extending into the channel.

34 citations

Journal ArticleDOI
TL;DR: In this paper, the carrier density profile of very leaky Schottky-barrier devices is obtained by measuring the impedance as a function of applied reverse voltage for two frequencies, along with expressions for the parasitic series and shunt resistances.
Abstract: A technique is presented which allows the carrier density profile to be obtained from very leaky Schottky-barrier devices. Measurements of the impedance as a function, of applied reverse voltage for two frequencies are combined to yield the depletion layer capacitance, along with expressions for the parasitic series and shunt resistances. The technique is easily extendable to MOS devices.

34 citations

Journal ArticleDOI
TL;DR: In this paper, the first generation back-contact back-junction (BC-BJ) silicon solar cells with cell efficiencies well above 20% were fabricated, and the silicon-doping is performed from pre-patterned solid diffusion sources, which allow for the precise adjustment of phosphorus and boron doping levels.
Abstract: In this paper, first generation back-contact back-junction (BC-BJ) silicon solar cells with cell efficiencies well above η = 20% were fabricated. The process sequence is industrially feasible, requires only one high-temperature step (codiffusion), and relies only on industrially available pattering technologies. The silicon-doping is performed from pre-patterned solid diffusion sources, which allow for the precise adjustment of phosphorusand boron-doping levels. Based on the investigated process technologies, BC-BJ solar cells with gap and without gap between adjacent n+ - and p+ -doped areas were processed. On the one hand, a strong reduction of the process effort is possible by omitting the gap regions. On the other hand, parasitic tunneling currents through the narrow space charge region may occur. Hence, deep doped areas were realized to avoid tunneling currents in gap-free BC-BJ cells. This paper finishes with a detailed characterization of the manufactured cells including important cell measurements like I-V, SunsVOC, quantum efficiency, and an analysis of the cell specific fill factor losses.

34 citations

Patent
10 Jan 2002
TL;DR: In this paper, the authors proposed a semiconductor device consisting of a first insulation film 14 formed on a semiconducting substrate, a floating gate electrode 22 formed on the first insulation layer, a second insulation layer on the floating gate, and a control gate electrode on the second insulation film.
Abstract: To provide a semiconductor device which can retain information for a long period of time even in a case that the tunnel insulation film is thin. A semiconductor device comprises a first insulation film 14 formed on a semiconductor substrate 10, a floating gate electrode 22 formed on the first insulation film, a second insulation 24 film formed on the floating gate electrode, and a control gate electrode 26 formed on the second insulation film. A depletion layer is formed in the floating gate electrode near the first insulation film in a state that no voltage is applied between the floating gate electrode and the semiconductor substrate.

34 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202326
202266
2021151
2020198
2019229
2018239