Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.

Surface‐tunneling‐induced 1/ f noise in Hg1−xCdxTe photodiodes

Abstract: The reverse bias dark curent of Hg1−xCdxTe (MCT) photodiodes is often dominated by tunneling across a pinched off surface depletion region. The width of this critical region may be modulated by charge exchange with slow surface states in a passivant insulator. Numerical calculations give the correct order of magnitude for observed 1/ f noise in ZnS passivated MCT photodiodes.

Body bias dependence of 1/f noise in NMOS transistors from deep-subthreshold to strong inversion

Abstract: Dependence of 1/f noise on the body-to-source junction bias voltages (V/sub BS/) between -25 and 05 V for 025-/spl mu/m NMOS transistors is reported In subthreshold, 1/f noise is reduced by about one order of magnitude, when the body-to-source junction is forward biased by 05 V (V/sub BS/) compared to that for V/sub BS/=0 V, which is due to increased depletion layer capacitance as well as possibly due to an increased average distance between oxide traps and carriers caused by the forward bias On the contrary, in strong inversion, 1/f noise remains almost constant for the entire V/sub BS/ range

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Abstract: The Schottky barrier height (SBH) variation and its dependence on applied voltage for NiSi/n-Si Schottky diodes with different SBH inhomogeneities have been studied by temperature-dependent current–voltage technique. The results show that the effective barrier height is strongly dependent on the SBH inhomogeneity and the applied voltage. The reduction of effective barrier height increases as the bias varies from forward to reverse, indicating that the pinch off, or more precisely saying, the presence of saddle point in the depletion region, does strongly affect the current transport. Under low reverse bias, the SBH reduction is proportional to one-fourth power of the band bending, which indicates that strip-like SBH inhomogeneity rather than patch-like SBH inhomogeneity exists in our samples. The strip region parameter ω is determined to be 1.63 × 10 −3 and 3.21 × 10 −3 V −1/2 cm −1/2 for the two diodes respectively. Under high reverse bias, the SBH reduction shows different behaviours for diodes with different SBH inhomogeneity. For diodes with small inhomogeneity, the SBH reduction increases faster than the one-fourth power of the band bending while for diodes with large inhomogeneity, the reduction increases more slowly than in the low reverse bias region. The reason is also explained in term of pinch off.

Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.

Abstract: One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p+-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

Optical semiconductor device and fabrication method therefor

Abstract: of EP0576009An optical semiconductor includes a photo diode integrated with a transistor built on first and second epitaxial layers grown of intrinsic material on a lightly doped substrate. A separating area divides the optical semiconductor into first and second isolated islands. The separating area is made up of a three separating areas, united end to end to form a single separating area. The first separating area is diffused at least upward from an interface between the substrate and the first epitaxial area. The second separating area is diffused both downward and upward from an interface between the first and second epitaxial layers. The third separating area is diffused downward from the surface of the second epitaxial layer. The photo diode is formed in the first island area, and the transistor is formed in the second island area. An offsetting layer in the surface of the substrate, at least below the first island, is counterdoped to expand the depth of the depletion layer of the photo diode. The separating area extends into the substrate to a depth exceeding to the depth of the counterdoped region.