Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.

Depleted-Heterojunction Colloidal Quantum Dot Solar Cells

Abstract: Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processability with quantum size-effect tunability to match absorption with the solar spectrum. Rapid recent advances in CQD photovoltaics have led to impressive 3.6% AM1.5 solar power conversion efficiencies. Two distinct device architectures and operating mechanisms have been advanced. The first—the Schottky device—was optimized and explained in terms of a depletion region driving electron−hole pair separation on the semiconductor side of a junction between an opaque low-work-function metal and a p-type CQD film. The second—the excitonic device—employed a CQD layer atop a transparent conductive oxide (TCO) and was explained in terms of diffusive exciton transport via energy transfer followed by exciton separation at the type-II heterointerface between the CQD film and the TCO. Here we fabricate CQD photovoltaic devices on TCOs and show that our devices rely on the establishment of a depletion region for field-driven charge transport and...

Depletion-Layer Photoeffects in Semiconductors

Abstract: The theory of photoconduction through the reverse-biased $p\ensuremath{-}n$ junction in semiconductors is developed without the customary assumption that carrier generation in the junction depletion layer is negligible. Different from previous theories, the more general treatment leads to a voltage dependence of the photocurrent and its spectral distribution. When the incident light beam is modulated at frequencies comparable to the transit time through the depletion layer, a phase shift between the photon flux and photocurrent is noticed and transit-time rectification occurs.

Semiconductor device, its manufacturing method, and electronic device

Abstract: A thin film transistor (1) wherein a gate electrode (3) is formed on an insulative substrate (2), a gate insulating layer (4) is formed on the gate electrode (3), a semiconductor layer (5) is formed on the gate insulating layer (4), a source electrode (6) and a drain electrode (7) are formed on the semiconductor layer (5), and a protective layer (8) covering them are formed. The semiconductor layer (5) is isolated from the atmosphere. The semiconductor layer (5) (active layer) is formed of a ZnO polycrystalline semiconductor doped with, for example, a group V element. Since the surface state of the ZnO semiconductor is reduced thanks to the protective layer (8) and inward expansion of the depletion layer is prevented, the ZnO semiconductor is of an n-type showing its intrinsic resistance value and contains excessive free electrons. The added element acts as acceptor impurities in the ZnO semiconductor, decreasing the excessive electrons. Thus the gate voltage to eliminate the excessive free electrons lowers, thereby making the threshold voltage around 0 V. A semiconductor device using a zinc oxide for an active layer and having a protective layer for isolating the active layer from the atmosphere can be actually used.

Vectorial electron injection into transparent semiconductor membranes and electric field effects on the dynamics of light-induced charge separation

Abstract: Transparent titanium dioxide membranes (thickness 2.7 {mu}m) were prepared by sintering of 8-nm colloidal anatase particles on a conducting glass support. The dynamics of charge recombination following electron injection from the excited state of RuL{sub 3} (L = 2,2{prime}-bipyridine-4,4{prime}-dicarboxylic acid) into the conduction band of the semiconductor were examined under potentiostatic control of the electric field within the space charge layer of the membrane. Biasing the Fermi level of the TiO{sub 2} positive of the flat-band potential sharply reduced the recombination rate, a 1,000-fold decrease being associated with a potential change of only 300 mV. Photoelectrochemical experiments performed with the same RuL{sub 3}-loaded membrane in NaI-containing water show the onset of anodic photocurrent to occur in the same potential domain. Forward biasing of the membrane potential impairs photosensitized charge injection turning on the photoluminescence of the adsorbed sensitizer.

Depleted hole conductor-free lead halide iodide heterojunction solar cells

Abstract: Lead halide perovskite is an excellent candidate for use as a light harvester in solar cells. Our work presents a depleted hole conductor free CH3NH3PbI3/TiO2 heterojunction solar cell using a thick CH3NH3PbI3 film. The CH3NH3PbI3 formed large crystals which function simultaneously as light harvesters and as hole transport materials. We performed capacitance voltage measurements, which show a depletion region which extends to both n and p sides. The built-in field of the depletion region assists in the charge separation and suppresses the back reaction of electrons from the TiO2 film to the CH3NH3PbI3 film. This depleted hole conductor free CH3NH3PbI3/TiO2 heterojunction solar cell provides a power conversion efficiency of 8% with a current density of 18.8 mA cm−2, the highest efficiency achieved to date for perovskite based solar cells without a hole conductor.