Topic
Depletion region
About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.
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TL;DR: The previously postulated production of holes during the electrical breakdown of varistors has been directly verified in this paper, where the authors used varistors of relatively simple chemical composition and showed that the intensity of this luminescence is greater in varistor compositions exhibiting higher nonlinearity coefficients.
Abstract: The previously postulated production of holes during the electrical breakdown of varistors has been directly verified. In some compositions band‐gap (3.2 eV) luminescence from the recombination of these holes with free electrons has been observed. The intensity of this luminescence is greater in varistor compositions exhibiting higher nonlinearity coefficients. It is also proportional to the square of the current which implies hole creation by impact ionization in the depletion region near the grain boundaries. This study used varistors of relatively simple chemical composition.
129 citations
TL;DR: In this article, the authors describe the mechanism of contact resistance reduction and improvement in device performance of organic field-effect transistors by chemical doping at the contact interface, which significantly reduced the contact resistance from 200 to 8.8
Abstract: We describe the mechanism of contact resistance reduction and improvement in device performance of organic field-effect transistors by chemical doping at the contact interface. Insertion of iron(III)trichloride into the contact interface significantly reduced the contact resistance from 200 to 8.8 kΩ cm at a gate voltage of −40 V, and a field-effect mobility of 7.0 cm2/V s was achieved in devices based on dioctylbenzothienobenzothiophene. The improved charge injection is attributable to a reduction in the depletion layer thickness at the contact interface and occupation of trap states in the access region due to the generation of charge carriers by contact doping.
128 citations
TL;DR: The potential of hematite as a photoanode material for photoelectrochemical (PEC) water splitting is described and the current understanding of key loss-mechanisms are introduced and correlated to performance enhancement strategies.
Abstract: This review describes the potential of hematite as a photoanode material for photoelectrochemical (PEC) water splitting. The current understanding of key loss-mechanisms of hematite are introduced and correlated to performance enhancement strategies. The significant voltage loss associated with overcoming the competitive water oxidation and surface state recombination has recently been surmounted through a combination of high temperature annealing and surface modification with water oxidation catalysts. Substantial efforts have been made at nanostructuring electrodes to increase the charge separation efficiency without sacrificing light absorption. Even in optimized nanostructured electrodes, however, charge separation continues to be the primary barrier to achieving efficient water splitting with hematite. Specifically, significant depletion region recombination results in voltage dependant photocurrent which constrains the fill factor. Thus, future directions to enhance the efficiency of hematite electrodes are discussed with an emphasis on circumventing depletion region recombination.
128 citations
TL;DR: In this paper, a high speed photodiodes with semitransparent film-semiconductor junctions, which behave as Schottky barriers, are designed and prepared.
Abstract: High speed photodiodes with semitransparent film-semiconductor junctions, which behave as Schottky barriers, are designed and prepared. The optimized width of the depletion layer of the photodiode is calculated for the selected cut-off frequency. The relations between transmittance and sheet resistivity are studied with some films of semiconducting compounds, which affect the gain and response time of photodiodes. The photodiodes, fabricated by the deposition of the semitransparent films of CdS or CU2Se on Si, have high frequency response and the cut-off frequency of Cu2Se-n.Si photodiodes is higher than 4 GHz.
127 citations
TL;DR: In this article, it was shown that the energy of electronic minority charge carriers injected into an electrolyte from an illuminated semiconductor electrode may be significantly greater than that predicted by previous models.
Abstract: It is shown that the energy of electronic minority charge carriers injected into an electrolyte from an illuminated semiconductor electrode may be significantly greater than that predicted by previous models. The time constants for tunneling from the semiconductor states in the depletion region are evaluated by two methods: approximating the final states as a continuum resulting from strong electron‐vibration interaction in the electrolyte, and calculating the oscillation time between semiconductor states and the discrete electrolyte states before vibrational relaxation. Comparisons are made with the time constants for intraband electronic relaxation in the semiconductor, including the effects of quantization due to confinement in the depletion region, and with those for the vibrational relaxation in the electrolyte. The general conditions for the injection of hot carriers from semiconductors into electrolytes are specified.
125 citations